Semiconductor structure and method for manufacturing the same

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United States of America Patent

PATENT NO 10121805
APP PUB NO 20180261636A1
SERIAL NO

15454610

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Abstract

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A semiconductor structure is disclosed. The semiconductor substrate includes: a front surface and a back surface; and a heterogeneous radiation-sensing region in the semiconductor substrate, the heterogeneous radiation-sensing region including a top surface, a bottom surface and sidewalls, the top surface being adjacent to the front surface of the semiconductor substrate, the sidewalls being perpendicular to the front surface of the semiconductor substrate, and the bottom surface being parallel to the front surface of the semiconductor substrate. An associated manufacturing method is also disclosed.

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Patent Owner(s)

  • TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chang, Yu-Hsing Taipei, TW 33 231
Chang, Yung-Chang Taipei, TW 140 698
Liu, Ming-Chyi Hsinchu, TW 55 366
Liu, Shih-Chang Kaohsiung County, TW 305 2187

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