Method for manufacturing non-volatile memory
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United States of America Patent
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Nov 9, 1999
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app pub date -
Sep 17, 1992
filing date -
Sep 19, 1991
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Abstract
A method for forming a non-volatile memory having a floating gate electrode arranged therein. The floating gate electrode being formed by alternatingly laminating on a silicon substrate a polysilicon layer and a tungsten silicide layer with a tunnel oxide sandwiched between said substrate and said polysilicon layer. The tungsten silicide layer is formed with a CVD technique reducing WF.sub.6 gas with SiH.sub.2 Cl.sub.2 gas.
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