Fabrication method of capacitor for integrated circuit
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United States of America Patent
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Mar 20, 2001
Grant Date -
N/A
app pub date -
Jan 28, 1999
filing date -
Dec 28, 1994
priority date (Note) -
Expired
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Abstract
A method for fabricating a capacitor for an integrated circuit, comprising the steps of forming a titanium film for an adhesion layer over a substrate, forming a titanium dioxide film for a diffusion barrier layer by annealing the titanium film after ion-implantation of oxygen ion into a surface region of the titanium film so as to change titanium in the surface region to titanium dioxide, and forming a high dielectric constant capacitor on the titanium dioxide film.
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