Utilizing atomic layer deposition for programmable device

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United States of America Patent

PATENT NO 6511867
APP PUB NO 20030003634A1
SERIAL NO

09896529

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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In an aspect, an apparatus is provided that sets and reprograms the state of programmable devices. In an aspect, a method is provided such that an opening is formed through a dielectric exposing a contact, the contact formed on a substrate. An electrode is conformally deposited on a wall of the dielectric, utilizing atomic layer deposition (ALD). A programmable material is formed on the electrode and a conductor is formed to the programmable material. In an aspect, a barrier is conformally deposited utilizing ALD, between the electrode and the programmable material.

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Patent Owner(s)

Patent OwnerAddress
OVONYX MEMORY TECHNOLOGY LLC1940 DUKE STREET SUITE 200 ALEXANDRIA VA 22314

International Classification(s)

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Dennison, Charles H San Jose, CA 269 8651
Lowrey, Tyler A San Jose, CA 212 12372

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