| 7,385,235 Spacer chalcogenide memory device
|
84 | 2004
|
| 7,033,856 Spacer chalcogenide memory method
|
146 | 2004
|
| 7,220,983 Self-aligned small contact phase-change memory method and device
|
169 | 2004
|
| 7,514,288 Manufacturing methods for thin film fuse phase change ram
|
3 | 2005
|
| 7,321,130 Thin film fuse phase change RAM and manufacturing method
|
102 | 2005
|
| 7,238,994 Thin film plate phase change ram circuit and manufacturing method
|
92 | 2005
|
| 7,608,503 Side wall active pin memory and manufacturing method
|
9 | 2005
|
| 7,507,986 Thermal isolation for an active-sidewall phase change memory cell
|
44 | 2006
|
| 7,432,206 Self-aligned manufacturing method, and manufacturing method for thin film fuse phase change ram
|
2 | 2006
|
| 7,394,088 Thermally contained/insulated phase change memory device and method (combined)
|
102 | 2006
|
| 7,956,358 I-shaped phase change memory cell with thermal isolation
|
1 | 2006
|
| 7,635,855 I-shaped phase change memory cell
|
9 | 2006
|
| 7,825,396 Self-align planerized bottom electrode phase change memory and manufacturing method
|
0 | 2006
|
| 7,471,555 Thermally insulated phase change memory device
|
4 | 2006
|
| 7,599,217 Memory cell device and manufacturing method
|
3 | 2006
|
| 8,062,833 Chalcogenide layer etching method
|
0 | 2006
|
| 7,910,907 Manufacturing method for pipe-shaped electrode phase change memory
|
1 | 2006
|
| 7,397,060 Pipe shaped phase change memory
|
92 | 2006
|
| 7,554,144 Memory device and manufacturing method
|
6 | 2006
|
| 7,928,421 Phase change memory cell with vacuum spacer
|
3 | 2006
|
| 7,829,876 Vacuum cell thermal isolation for a phase change memory device
|
5 | 2006
|
| 7,479,649 Vacuum jacketed electrode for phase change memory element
|
58 | 2006
|
| 7,449,710 Vacuum jacket for phase change memory element
|
81 | 2006
|
| 7,521,364 Surface topology improvement method for plug surface areas
|
0 | 2006
|
| 7,456,421 Vertical side wall active pin structures in a phase change memory and manufacturing methods
|
4 | 2006
|
| 8,129,706 Structures and methods of a bistable resistive random access memory
|
3 | 2006
|
| 7,608,848 Bridge resistance random access memory device with a singular contact structure
|
48 | 2006
|
| 7,605,079 Manufacturing method for phase change RAM with electrode layer process
|
4 | 2006
|
| 7,514,367 Method for manufacturing a narrow structure on an integrated circuit
|
0 | 2006
|
| 7,423,300 Single-mask phase change memory element
|
88 | 2006
|
| 7,820,997 Resistor random access memory cell with reduced active area and reduced contact areas
|
0 | 2006
|
| 7,732,800 Resistor random access memory cell with L-shaped electrode
|
0 | 2006
|
| 7,459,717 Phase change memory cell and manufacturing method
|
11 | 2006
|
| 7,414,258 Spacer electrode small pin phase change memory RAM and manufacturing method
|
2 | 2006
|
| 8,237,140 Self-aligned, embedded phase change RAM
|
0 | 2006
|
| 7,642,539 Thin film fuse phase change cell with thermal isolation pad and manufacturing method
|
1 | 2006
|
| 7,560,337 Programmable resistive RAM and manufacturing method
|
20 | 2006
|
| 7,696,506 Memory cell with memory material insulation and manufacturing method
|
2 | 2006
|
| 7,785,920 Method for making a pillar-type phase change memory element
|
1 | 2006
|
| 7,741,636 Programmable resistive RAM and manufacturing method
|
1 | 2006
|
| 7,450,411 Phase change memory device and manufacturing method
|
2 | 2006
|
| 7,595,218 Programmable resistive RAM and manufacturing method
|
2 | 2006
|
| 7,531,825 Method for forming self-aligned thermal isolation cell for a variable resistance memory array
|
2 | 2006
|
| 7,442,603 Self-aligned structure and method for confining a melting point in a resistor random access memory
|
5 | 2006
|
| 7,598,512 Thin film fuse phase change cell with thermal isolation layer and manufacturing method
|
2 | 2006
|
| 7,772,581 Memory device having wide area phase change element and small electrode contact area
|
20 | 2006
|
| 7,504,653 Memory cell device with circumferentially-extending memory element
|
18 | 2006
|
| 7,510,929 Method for making memory cell device
|
1 | 2006
|
| 7,863,655 Phase change memory cells with dual access devices
|
1 | 2006
|
| 7,527,985 Method for manufacturing a resistor random access memory with reduced active area and reduced contact areas
|
1 | 2006
|
| 7,388,771 Methods of operating a bistable resistance random access memory with multiple memory layers and multilevel memory states
|
4 | 2006
|
| 8,067,762 Resistance random access memory structure for enhanced retention
|
1 | 2006
|
| 7,816,661 Air cell thermal isolation for a memory array formed of a programmable resistive material
|
0 | 2006
|
| 7,682,868 Method for making a keyhole opening during the manufacture of a memory cell
|
0 | 2006
|
| 7,476,587 Method for making a self-converged memory material element for memory cell
|
16 | 2006
|
| 7,697,316 Multi-level cell resistance random access memory with metal oxides
|
41 | 2006
|
| 7,903,447 Method, apparatus and computer program product for read before programming process on programmable resistive memory cell
|
0 | 2006
|
| 8,344,347 Multi-layer electrode structure
|
0 | 2006
|
| 7,688,619 Phase change memory cell and manufacturing method
|
51 | 2006
|
| 7,718,989 Resistor random access memory cell device
|
3 | 2006
|
| 7,786,460 Phase change memory device and manufacturing method
|
39 | 2007
|
| 7,440,315 Method, apparatus and computer program product for stepped reset programming process on programmable resistive memory cell
|
9 | 2007
|
| 7,433,226 Method, apparatus and computer program product for read before programming process on multiple programmable resistive memory cell
|
8 | 2007
|
| 7,483,292 Memory cell with separate read and program paths
|
3 | 2007
|
| 8,008,643 Phase change memory cell with heater and method for fabricating the same
|
0 | 2007
|
| 7,619,237 Programmable resistive memory cell with self-forming gap
|
2 | 2007
|
| 7,534,647 Damascene phase change RAM and manufacturing method
|
2 | 2007
|
| 7,956,344 Memory cell with memory element contacting ring-shaped upper end of bottom electrode
|
3 | 2007
|
| 7,786,461 Memory structure with reduced-size memory element between memory material portions
|
8 | 2007
|
| 8,610,098 Phase change memory bridge cell with diode isolation device
|
0 | 2007
|
| 7,755,076 self align side wall active phase change memory
|
12 | 2007
|
| 7,569,844 Memory cell sidewall contacting side electrode
|
27 | 2007
|
| 7,514,334 Thin film plate phase change RAM circuit and manufacturing method
|
48 | 2007
|
| 7,463,512 Memory element with reduced-current phase change element
|
7 | 2007
|
| 7,701,759 Memory cell device and programming methods
|
10 | 2007
|
| 8,513,637 4F2 self align fin bottom electrodes FET drive phase change memory
|
0 | 2007
|
| 7,483,316 Method and apparatus for refreshing programmable resistive memory
|
1 | 2007
|
| 7,884,342 Phase change memory bridge cell
|
0 | 2007
|
| 7,729,161 Phase change memory with dual word lines and source lines and method of operating same
|
4 | 2007
|
| 7,696,503 Multi-level memory cell having phase change element and asymmetrical thermal boundary
|
14 | 2007
|
| 8,178,386 Phase change memory cell array with self-converged bottom electrode and method for manufacturing
|
1 | 2007
|
| 7,642,125 Phase change memory cell in via array with self-aligned, self-converged bottom electrode and method for manufacturing
|
5 | 2007
|
| 7,663,135 Memory cell having a side electrode contact
|
5 | 2007
|
| 7,551,473 Programmable resistive memory with diode structure
|
15 | 2007
|
| 7,535,756 Method to tighten set distribution for PCRAM
|
10 | 2007
|
| 7,919,766 Method for making self aligning pillar memory cell device
|
2 | 2007
|
| 7,804,083 Phase change memory cell including a thermal protect bottom electrode and manufacturing methods
|
1 | 2007
|
| 7,646,631 Phase change memory cell having interface structures with essentially equal thermal impedances and manufacturing methods
|
2 | 2007
|
| 7,579,613 Thin film fuse phase change RAM and manufacturing method
|
10 | 2007
|
| 7,639,527 Phase change memory dynamic resistance test and manufacturing methods
|
2 | 2008
|
| 7,884,343 Phase change memory cell with filled sidewall memory element and method for fabricating the same
|
4 | 2008
|
| 7,879,643 Memory cell with memory element contacting an inverted T-shaped bottom electrode
|
2 | 2008
|
| 7,879,645 Fill-in etching free pore device
|
9 | 2008
|
| 7,619,311 Memory cell device with coplanar electrode surface and method
|
10 | 2008
|
| 8,158,965 Heating center PCRAM structure and methods for making
|
0 | 2008
|
| 7,932,101 Thermally contained/insulated phase change memory device and method
|
1 | 2008
|
| 8,084,842 Thermally stabilized electrode structure
|
1 | 2008
|
| 7,791,057 Memory cell having a buried phase change region and method for fabricating the same
|
6 | 2008
|
| 7,701,750 Phase change device having two or more substantial amorphous regions in high resistance state
|
11 | 2008
|
| 7,586,778 Methods of operating a bistable resistance random access memory with multiple memory layers and multilevel memory states
|
38 | 2008
|
| 8,415,651 Phase change memory cell having top and bottom sidewall contacts
|
0 | 2008
|
| 7,642,123 Thermally insulated phase change memory manufacturing method
|
3 | 2008
|
| 7,867,815 Spacer electrode small pin phase change RAM and manufacturing method
|
0 | 2008
|
| 7,777,215 Resistive memory structure with buffer layer
|
12 | 2008
|
| 7,932,506 Fully self-aligned pore-type memory cell having diode access device
|
2 | 2008
|
| 7,903,457 Multiple phase change materials in an integrated circuit for system on a chip application
|
4 | 2008
|
| 7,842,536 Vacuum jacket for phase change memory element
|
1 | 2008
|
| 7,719,913 Sensing circuit for PCRAM applications
|
1 | 2008
|
| 8,243,494 Self-aligned structure and method for confining a melting point in a resistor random access memory
|
0 | 2008
|
| 8,324,605 Dielectric mesh isolated phase change structure for phase change memory
|
1 | 2008
|
| 7,897,954 Dielectric-sandwiched pillar memory device
|
0 | 2008
|
| 7,932,129 Vertical side wall active pin structures in a phase change memory and manufacturing methods
|
0 | 2008
|
| 8,036,014 Phase change memory program method without over-reset
|
4 | 2008
|
| 7,902,538 Phase change memory cell with first and second transition temperature portions
|
2 | 2008
|
| 8,664,689 Memory cell access device having a pn-junction with polycrystalline plug and single-crystal semiconductor regions
|
0 | 2008
|
| 7,638,359 Method for making a self-converged void and bottom electrode for memory cell
|
2 | 2008
|
| 7,749,854 Method for making a self-converged memory material element for memory cell
|
0 | 2008
|
| 7,687,307 Vacuum jacketed electrode for phase change memory element
|
0 | 2008
|
| 7,869,270 Set algorithm for phase change memory cell
|
2 | 2008
|
| 8,089,137 Integrated circuit memory with single crystal silicon on silicide driver and manufacturing method
|
11 | 2009
|
| 7,923,285 Method for forming self-aligned thermal isolation cell for a variable resistance memory array
|
2 | 2009
|
| 8,107,283 Method for setting PCRAM devices
|
3 | 2009
|
| 8,030,635 Polysilicon plug bipolar transistor for phase change memory
|
2 | 2009
|
| 7,910,906 Memory cell device with circumferentially-extending memory element
|
0 | 2009
|
| 8,084,760 Ring-shaped electrode and manufacturing method for same
|
0 | 2009
|
| 8,173,987 Integrated circuit 3D phase change memory array and manufacturing method
|
0 | 2009
|
| 8,077,505 Bipolar switching of phase change device
|
1 | 2009
|
| 8,097,871 Low operational current phase change memory structures
|
0 | 2009
|
| 8,134,857 Methods for high speed reading operation of phase change memory and device employing same
|
1 | 2009
|
| 7,933,139 One-transistor, one-resistor, one-capacitor phase change memory
|
6 | 2009
|
| 7,972,893 Memory device manufacturing method
|
0 | 2009
|
| 8,350,316 Phase change memory cells having vertical channel access transistor and memory plane
|
0 | 2009
|
| 7,968,876 Phase change memory cell having vertical channel access transistor
|
2 | 2009
|
| 8,158,963 Programmable resistive RAM and manufacturing method
|
0 | 2009
|
| 8,406,033 Memory device and method for sensing and fixing margin cells
|
0 | 2009
|
| 8,064,247 Rewritable memory device based on segregation/re-absorption
|
1 | 2009
|
| 8,110,822 Thermal protect PCRAM structure and methods for making
|
1 | 2009
|
| 7,894,254 Refresh circuitry for phase change memory
|
3 | 2009
|
| 7,924,600 Methods of operating a bistable resistance random access memory with multiple memory layers and multilevel memory states
|
2 | 2009
|
| 8,198,619 Phase change memory cell structure
|
0 | 2009
|
| 8,064,248 2T2R-1T1R mix mode phase change memory array
|
1 | 2009
|
| 8,110,429 Bridge resistance random access memory device and method with a singular contact structure
|
0 | 2009
|
| 7,879,692 Programmable resistive memory cell with self-forming gap
|
0 | 2009
|
| 7,972,895 Memory cell device with coplanar electrode surface and method
|
2 | 2009
|
| 7,993,962 I-shaped phase change memory cell
|
0 | 2009
|
| 8,143,612 Phase change memory cell in via array with self-aligned, self-converged bottom electrode and method for manufacturing
|
0 | 2009
|
| 8,062,923 Thin film fuse phase change cell with thermal isolation pad and manufacturing method
|
0 | 2009
|
| 7,893,418 Phase change memory cell having interface structures with essentially equal thermal impedances and manufacturing methods
|
0 | 2009
|
| 7,964,863 Memory cell having a side electrode contact
|
0 | 2009
|
| 7,929,340 Phase change memory cell and manufacturing method
|
1 | 2010
|
| 7,964,468 Multi-level memory cell having phase change element and asymmetrical thermal boundary
|
1 | 2010
|
| 8,238,149 Methods and apparatus for reducing defect bits in phase change memory
|
1 | 2010
|
| 8,111,541 Method of a multi-level cell resistance random access memory with metal oxides
|
1 | 2010
|
| 7,920,415 Memory cell device and programming methods
|
0 | 2010
|
| 8,059,449 Phase change device having two or more substantial amorphous regions in high resistance state
|
1 | 2010
|
| 8,363,463 Phase change memory having one or more non-constant doping profiles
|
1 | 2010
|
| 8,178,387 Methods for reducing recrystallization time for a phase change material
|
0 | 2010
|
| 8,178,405 Resistor random access memory cell device
|
0 | 2010
|
| 7,978,509 Phase change memory with dual word lines and source lines and method of operating same
|
0 | 2010
|
| 8,080,440 Resistor random access memory cell with L-shaped electrode
|
0 | 2010
|
| 8,178,388 Programmable resistive RAM and manufacturing method
|
2 | 2010
|
| 8,237,148 self align side wall active phase change memory
|
0 | 2010
|
| 8,310,864 Self-aligned bit line under word line memory array
|
0 | 2010
|
| 7,964,437 Memory device having wide area phase change element and small electrode contact area
|
1 | 2010
|
| 7,943,920 Resistive memory structure with buffer layer
|
0 | 2010
|
| 8,008,114 Phase change memory device and manufacturing method
|
0 | 2010
|
| 7,875,493 Memory structure with reduced-size memory element between memory material portions
|
3 | 2010
|
| 8,039,392 Resistor random access memory cell with reduced active area and reduced contact areas
|
1 | 2010
|
| 8,395,935 Cross-point self-aligned reduced cell size phase change memory
|
0 | 2010
|
| 8,143,089 Self-align planerized bottom electrode phase change memory and manufacturing method
|
1 | 2010
|
| 8,097,487 Method for making a phase change memory device with vacuum cell thermal isolation
|
1 | 2010
|
| 8,110,430 Vacuum jacket for phase change memory element
|
0 | 2010
|
| 8,497,705 Phase change device for interconnection of programmable logic device
|
0 | 2010
|
| 8,467,238 Dynamic pulse operation for phase change memory
|
0 | 2010
|
| 8,110,456 Method for making a self aligning memory device
|
0 | 2010
|
| 8,094,488 Set algorithm for phase change memory cell
|
1 | 2010
|
| 8,263,960 Phase change memory cell with filled sidewall memory element and method for fabricating the same
|
0 | 2010
|
| 8,315,088 Multiple phase change materials in an integrated circuit for system on a chip application
|
0 | 2011
|
| 8,228,721 Refresh circuitry for phase change memory
|
0 | 2011
|
| 8,222,071 Method for making self aligning pillar memory cell device
|
0 | 2011
|
| 8,313,979 Phase change memory cell having vertical channel access transistor
|
0 | 2011
|
| 8,324,681 Stacked non-volatile memory device and methods for fabricating the same
|
0 | 2011
|
| 8,237,144 Polysilicon plug bipolar transistor for phase change memory
|
0 | 2011
|
| 8,587,983 Resistance random access memory structure for enhanced retention
|
0 | 2011
|
| 8,293,600 Thermally stabilized electrode structure
|
0 | 2011
|
| 8,624,236 Phase change memory cell having vertical channel access transistor
|
0 | 2012
|
| 6,951,805 Method of forming integrated circuitry, method of forming memory circuitry, and method of forming random access memory circuitry
|
7 | 2001
|
| 6,955,940 Method of forming chalcogenide comprising devices
|
26 | 2001
|
| 6,815,818 Electrode structure for use in an integrated circuit
|
13 | 2001
|
| 6,873,538 Programmable conductor random access memory and a method for writing thereto
|
16 | 2001
|
| 6,909,656 PCRAM rewrite prevention
|
10 | 2002
|
| 6,791,885 Programmable conductor random access memory and method for sensing same
|
10 | 2002
|
| 6,891,749 Resistance variable ‘on ’ memory
|
21 | 2002
|
| 6,809,362 Multiple data state memory cell
|
14 | 2002
|
| 6,937,528 Variable resistance memory and method for sensing same
|
17 | 2002
|
| 6,849,868 Methods and apparatus for resistance variable material cells
|
16 | 2002
|
| 6,864,500 Programmable conductor memory cell structure
|
198 | 2002
|
| 6,858,482 Method of manufacture of programmable switching circuits and memory cells employing a glass layer
|
21 | 2002
|
| 6,855,975 Thin film diode integrated with chalcogenide memory cell
|
26 | 2002
|
| 7,015,494 Assemblies displaying differential negative resistance
|
12 | 2002
|
| 7,071,021 PCRAM memory cell and method of making same
|
15 | 2002
|
| 7,018,863 Method of manufacture of a resistance variable memory cell
|
10 | 2002
|
| 7,364,644 Silver selenide film stoichiometry and morphology control in sputter deposition
|
3 | 2002
|
| 7,163,837 Method of forming a resistance variable memory element
|
7 | 2002
|
| 7,010,644 Software refreshed memory device and method
|
7 | 2002
|
| 6,867,114 Methods to form a memory cell with metal-rich metal chalcogenide
|
18 | 2002
|
| 6,867,996 Single-polarity programmable resistance-variable memory element
|
40 | 2002
|
| 6,864,521 Method to control silver concentration in a resistance variable memory element
|
19 | 2002
|
| 6,856,002 Graded GexSe100-x concentration in PCRAM
|
20 | 2002
|
| 6,949,453 Agglomeration elimination for metal sputter deposition of chalcogenides
|
3 | 2002
|
| 6,878,569 Agglomeration elimination for metal sputter deposition of chalcogenides
|
9 | 2002
|
| 6,894,304 Apparatus and method for dual cell common electrode PCRAM memory device
|
115 | 2003
|
| 6,813,178 Chalcogenide glass constant current device, and its method of fabrication and operation
|
18 | 2003
|
| 7,022,579 Method for filling via with metal
|
2 | 2003
|
| 7,050,327 Differential negative resistance memory
|
18 | 2003
|
| 6,888,155 Stoichiometry for chalcogenide glasses useful for memory devices and method of formation
|
23 | 2003
|
| 6,961,277 Method of refreshing a PCRAM memory device
|
26 | 2003
|
| 7,061,004 Resistance variable memory elements and methods of formation
|
7 | 2003
|
| 6,812,087 Methods of forming non-volatile resistance variable devices and methods of forming silver selenide comprising structures
|
13 | 2003
|
| 6,858,465 Elimination of dendrite formation during metal/chalcogenide glass deposition
|
3 | 2003
|
| 6,833,559 Non-volatile resistance variable device
|
3 | 2003
|
| 6,882,578 PCRAM rewrite prevention
|
4 | 2003
|
| 6,998,697 Non-volatile resistance variable devices
|
13 | 2003
|
| 7,528,401 Agglomeration elimination for metal sputter deposition of chalcogenides
|
2 | 2004
|
| 6,974,965 Agglomeration elimination for metal sputter deposition of chalcogenides
|
4 | 2004
|
| 7,105,864 Non-volatile zero field splitting resonance memory
|
7 | 2004
|
| 7,056,762 Methods to form a memory cell with metal-rich metal chalcogenide
|
11 | 2004
|
| 7,022,555 Methods of forming a semiconductor memory device
|
1 | 2004
|
| 6,949,402 Method of forming a non-volatile resistance variable device
|
1 | 2004
|
| 6,953,720 Methods for forming chalcogenide glass-based memory elements
|
14 | 2004
|
| 7,479,650 Method of manufacture of programmable conductor memory
|
19 | 2004
|
| 7,098,068 Method of forming a chalcogenide material containing device
|
6 | 2004
|
| 7,087,454 Fabrication of single polarity programmable resistance structure
|
10 | 2004
|
| 7,087,919 Layered resistance variable memory device and method of fabrication
|
13 | 2004
|
| 6,908,808 Method of forming and storing data in a multiple state memory cell
|
4 | 2004
|
| 7,002,833 Complementary bit resistance memory sensor and method of operation
|
33 | 2004
|
| 7,115,504 Method of forming electrode structure for use in an integrated circuit
|
9 | 2004
|
| 7,115,992 Electrode structure for use in an integrated circuit
|
3 | 2004
|
| 7,332,401 Method of fabricating an electrode structure for use in an integrated circuit
|
9 | 2004
|
| 7,459,764 Method of manufacture of a PCRAM memory cell
|
7 | 2004
|
| 7,190,048 Resistance variable memory device and method of fabrication
|
11 | 2004
|
| 7,365,411 Resistance variable memory with temperature tolerant materials
|
24 | 2004
|
| 7,354,793 Method of forming a PCRAM device incorporating a resistance-variable chalocogenide element
|
7 | 2004
|
| 6,954,385 Method and apparatus for sensing resistive memory state
|
15 | 2004
|
| 7,030,410 Resistance variable device
|
9 | 2004
|
| 7,209,378 Columnar 1T-N memory cell structure
|
7 | 2004
|
| 7,151,688 Sensing of resistance variable memory devices
|
8 | 2004
|
| 7,094,700 Plasma etching methods and methods of forming memory devices comprising a chalcogenide comprising layer received operably proximate conductive electrodes
|
1 | 2004
|
| 7,223,627 Memory element and its method of formation
|
7 | 2004
|
| 7,329,558 Differential negative resistance memory
|
8 | 2004
|
| 7,112,484 Thin film diode integrated with chalcogenide memory cell
|
5 | 2004
|
| 7,049,009 Silver selenide film stoichiometry and morphology control in sputter deposition
|
3 | 2004
|
| 7,374,174 Small electrode for resistance variable devices
|
6 | 2004
|
| 7,317,200 SnSe-based limited reprogrammable cell
|
7 | 2005
|
| 7,224,632 Rewrite prevention in a variable resistance memory
|
4 | 2005
|
| 7,202,520 Multiple data state memory cell
|
5 | 2005
|
| 7,348,205 Method of forming resistance variable devices
|
6 | 2005
|
| 7,709,289 Memory elements having patterned electrodes and method of forming the same
|
0 | 2005
|
| 7,427,770 Memory array for increased bit density
|
4 | 2005
|
| 7,269,044 Method and apparatus for accessing a memory array
|
1 | 2005
|
| 7,385,868 Method of refreshing a PCRAM memory device
|
7 | 2005
|
| 7,269,079 Power circuits for reducing a number of power supply voltage taps required for sensing a resistive memory
|
1 | 2005
|
| 7,326,950 Memory device with switching glass layer
|
8 | 2005
|
| 7,233,520 Process for erasing chalcogenide variable resistance memory bits
|
7 | 2005
|
| 7,274,034 Resistance variable memory device with sputtered metal-chalcogenide region and method of fabrication
|
8 | 2005
|
| 7,332,735 Phase change memory cell and method of formation
|
20 | 2005
|
| 7,317,567 Method and apparatus for providing color changing thin film material
|
8 | 2005
|
| 7,518,212 concentration in PCRAM
|
9 | 2005
|
| 7,579,615 Access transistor for memory device
|
6 | 2005
|
| 7,304,368 Chalcogenide-based electrokinetic memory element and method of forming the same
|
7 | 2005
|
| 7,251,154 Method and apparatus providing a cross-point memory array using a variable resistance memory cell and capacitance
|
16 | 2005
|
| 7,277,313 Resistance variable memory element with threshold device and method of forming the same
|
7 | 2005
|
| 7,199,444 Memory device, programmable resistance memory cell and memory array
|
3 | 2005
|
| 7,242,603 Method of operating a complementary bit resistance memory sensor
|
8 | 2005
|
| 7,294,527 Method of forming a memory cell
|
7 | 2005
|
| 7,307,908 Software refreshed memory device and method
|
4 | 2005
|
| 7,235,419 Method of making a memory cell
|
4 | 2005
|
| 7,550,818 Method of manufacture of a PCRAM memory cell
|
6 | 2006
|
| 7,396,699 Method of forming non-volatile resistance variable devices and method of forming a programmable memory cell of memory circuitry
|
7 | 2006
|
| 7,547,905 Programmable conductor memory cell structure and method therefor
|
0 | 2006
|
| 7,723,713 Layered resistance variable memory device and method of fabrication
|
9 | 2006
|
| 7,393,798 Resistance variable memory with temperature tolerant materials
|
14 | 2006
|
| 7,190,608 Sensing of resistance variable memory devices
|
8 | 2006
|
| 7,459,336 Method of forming a chalcogenide material containing device
|
0 | 2006
|
| 7,366,003 Method of operating a complementary bit resistance memory sensor and method of operation
|
0 | 2006
|
| 7,692,177 Resistance variable memory element and its method of formation
|
6 | 2006
|
| 7,348,209 Resistance variable memory device and method of fabrication
|
7 | 2006
|
| 7,700,422 Methods of forming memory arrays for increased bit density
|
0 | 2006
|
| 7,910,397 Small electrode for resistance variable devices
|
0 | 2006
|
| 7,663,133 Memory elements having patterned electrodes and method of forming the same
|
0 | 2006
|
| 7,289,349 Resistance variable memory element with threshold device and method of forming the same
|
8 | 2006
|
| 7,366,045 Power circuits for reducing a number of power supply voltage taps required for sensing a resistive memory
|
0 | 2006
|
| 7,498,231 Multiple data state memory cell
|
0 | 2007
|
| 7,282,783 Resistance variable memory device and method of fabrication
|
8 | 2007
|
| 7,709,885 Access transistor for memory device
|
12 | 2007
|
| 7,994,491 PCRAM device with switching glass layer
|
2 | 2007
|
| 7,759,665 PCRAM device with switching glass layer
|
6 | 2007
|
| 7,643,333 Process for erasing chalcogenide variable resistance memory bits
|
0 | 2007
|
| 7,687,793 Resistance variable memory cells
|
15 | 2007
|
| 7,564,731 Software refreshed memory device and method
|
3 | 2007
|
| 7,668,000 Method and apparatus providing a cross-point memory array using a variable resistance memory cell and capacitance
|
2 | 2007
|
| 7,433,227 Resistance variable memory device with sputtered metal-chalcogenide region and method of fabrication
|
9 | 2007
|
| 8,101,936 SnSe-based limited reprogrammable cell
|
0 | 2007
|
| 7,663,137 Phase change memory cell and method of formation
|
10 | 2007
|
| 7,745,808 Differential negative resistance memory
|
7 | 2007
|
| 7,749,853 Method of forming a variable resistance memory device comprising tin selenide
|
6 | 2008
|
| 7,863,597 Resistance variable memory devices with passivating material
|
2 | 2008
|
| 7,879,646 Assemblies displaying differential negative resistance, semiconductor constructions, and methods of forming assemblies displaying differential negative resistance
|
2 | 2008
|
| 7,785,976 Method of forming a memory device incorporating a resistance-variable chalcogenide element
|
7 | 2008
|
| 7,586,777 Resistance variable memory with temperature tolerant materials
|
9 | 2008
|
| 7,869,249 Complementary bit PCRAM sense amplifier and method of operation
|
0 | 2008
|
| 7,551,509 Power circuits for reducing a number of power supply voltage taps required for sensing a resistive memory
|
1 | 2008
|
| 7,682,992 Resistance variable memory with temperature tolerant materials
|
7 | 2008
|
| 7,701,760 Resistance variable memory device with sputtered metal-chalcogenide region and method of fabrication
|
9 | 2008
|
| 7,768,861 Software refreshed memory device and method
|
0 | 2009
|
| 7,791,058 Enhanced memory density resistance variable memory cells, arrays, devices and systems including the same, and methods of fabrication
|
4 | 2009
|
| 7,978,500 Method and apparatus providing a cross-point memory array using a variable resistance memory cell and capacitance
|
0 | 2010
|
| 7,924,603 Resistance variable memory with temperature tolerant materials
|
2 | 2010
|
| 7,968,927 Memory array for increased bit density and method of forming the same
|
0 | 2010
|
| 7,940,556 Resistance variable memory device with sputtered metal-chalcogenide region and method of fabrication
|
2 | 2010
|
| 8,652,903 Access transistor for memory device
|
0 | 2010
|
| 8,263,958 Layered resistance variable memory device and method of fabrication
|
1 | 2010
|
| 8,334,186 Method of forming a memory device incorporating a resistance variable chalcogenide element
|
0 | 2010
|
| 7,944,768 Software refreshed memory device and method
|
0 | 2010
|
| 8,030,636 Enhanced memory density resistance variable memory cells, arrays, devices and systems including the same, and methods of fabrication
|
0 | 2010
|
| 8,189,366 Method and apparatus providing a cross-point memory array using a variable resistance memory cell and capacitance
|
1 | 2011
|
| 8,487,288 Memory device incorporating a resistance variable chalcogenide element
|
0 | 2011
|
| 8,611,136 Method and apparatus providing a cross-point memory array using a variable resistance memory cell and capacitance
|
0 | 2012
|
