US Patent No: 6,567,293

Number of patents in Portfolio can not be more than 2000

Single level metal memory cell using chalcogenide cladding

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Abstract

An apparatus including a volume of phase change material disposed between a first conductor and a second conductor on a substrate, and a plurality of electrodes coupled to the volume of phase change material and the first conductor. A method including introducing, over a first conductor on a substrate, a plurality of electrodes coupled to the first conductor, introducing a phase change material over the plurality of electrodes and in electrical communication with the plurality of electrodes, and introducing a second conductor over the phase change material and coupled to the phase change material.

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First Claim

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Patent Owner(s)

Patent OwnerAddressTotal Patents
OVONYX, INC.BOISE, ID292

International Classification(s)

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  • [Patents Count]

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Gill, Manzur Cupertino, CA 82 2342
Lowrey, Tyler A San Jose, CA 246 9462

Cited Art Landscape

Patent Info (Count) # Cites Year
 
ROUND ROCK RESEARCH, LLC (9)
5,789,758 Chalcogenide memory cell with a plurality of chalcogenide electrodes 332 1995
5,879,955 Method for fabricating an array of ultra-small pores for chalcogenide memory cells 254 1995
5,998,244 Memory cell incorporating a chalcogenide element and method of making same 270 1996
6,002,140 Method for fabricating an array of ultra-small pores for chalcogenide memory cells 43 1997
6,031,287 Contact structure and memory element incorporating the same 434 1997
5,970,336 Method of making memory cell incorporating a chalcogenide element 261 1997
5,920,788 Chalcogenide memory cell with a plurality of chalcogenide electrodes 458 1997
6,229,157 Method of forming a polysilicon diode and devices incorporating such diode 44 1999
6,153,890 Memory cell incorporating a chalcogenide element 243 1999
 
OVONYX, INC. (5)
5,296,716 Electrically erasable, directly overwritable, multibit single cell memory elements and arrays fabricated therefrom 441 1991
5,825,046 Composite memory material comprising a mixture of phase-change memory material and dielectric material 318 1996
5,933,365 Memory element with energy control mechanism 372 1997
6,087,674 Memory element with memory material comprising phase-change material and dielectric material 504 1998
6,339,544 Method to enhance performance of thermal resistor device 386 2000

Patent Citation Ranking

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Patent Info (Count) # Cites Year
 
MACRONIX INTERNATIONAL CO., LTD. (182)
7,385,235 Spacer chalcogenide memory device 82 2004
7,033,856 Spacer chalcogenide memory method 143 2004
7,220,983 Self-aligned small contact phase-change memory method and device 164 2004
7,514,288 Manufacturing methods for thin film fuse phase change ram 2 2005
7,321,130 Thin film fuse phase change RAM and manufacturing method 98 2005
7,238,994 Thin film plate phase change ram circuit and manufacturing method 89 2005
7,608,503 Side wall active pin memory and manufacturing method 8 2005
7,507,986 Thermal isolation for an active-sidewall phase change memory cell 43 2006
7,432,206 Self-aligned manufacturing method, and manufacturing method for thin film fuse phase change ram 2 2006
7,394,088 Thermally contained/insulated phase change memory device and method (combined) 99 2006
7,956,358 I-shaped phase change memory cell with thermal isolation 1 2006
7,635,855 I-shaped phase change memory cell 9 2006
7,825,396 Self-align planerized bottom electrode phase change memory and manufacturing method 0 2006
7,471,555 Thermally insulated phase change memory device 4 2006
7,599,217 Memory cell device and manufacturing method 3 2006
8,062,833 Chalcogenide layer etching method 0 2006
7,910,907 Manufacturing method for pipe-shaped electrode phase change memory 1 2006
7,397,060 Pipe shaped phase change memory 86 2006
7,554,144 Memory device and manufacturing method 6 2006
7,928,421 Phase change memory cell with vacuum spacer 2 2006
7,829,876 Vacuum cell thermal isolation for a phase change memory device 4 2006
7,479,649 Vacuum jacketed electrode for phase change memory element 56 2006
7,449,710 Vacuum jacket for phase change memory element 79 2006
7,521,364 Surface topology improvement method for plug surface areas 0 2006
7,456,421 Vertical side wall active pin structures in a phase change memory and manufacturing methods 4 2006
8,129,706 Structures and methods of a bistable resistive random access memory 1 2006
7,608,848 Bridge resistance random access memory device with a singular contact structure 39 2006
7,605,079 Manufacturing method for phase change RAM with electrode layer process 3 2006
7,514,367 Method for manufacturing a narrow structure on an integrated circuit 0 2006
7,423,300 Single-mask phase change memory element 85 2006
7,820,997 Resistor random access memory cell with reduced active area and reduced contact areas 0 2006
7,732,800 Resistor random access memory cell with L-shaped electrode 0 2006
7,459,717 Phase change memory cell and manufacturing method 10 2006
7,414,258 Spacer electrode small pin phase change memory RAM and manufacturing method 2 2006
8,237,140 Self-aligned, embedded phase change RAM 0 2006
7,642,539 Thin film fuse phase change cell with thermal isolation pad and manufacturing method 1 2006
7,560,337 Programmable resistive RAM and manufacturing method 20 2006
7,696,506 Memory cell with memory material insulation and manufacturing method 1 2006
7,785,920 Method for making a pillar-type phase change memory element 1 2006
7,741,636 Programmable resistive RAM and manufacturing method 1 2006
7,450,411 Phase change memory device and manufacturing method 2 2006
7,595,218 Programmable resistive RAM and manufacturing method 2 2006
7,531,825 Method for forming self-aligned thermal isolation cell for a variable resistance memory array 2 2006
7,442,603 Self-aligned structure and method for confining a melting point in a resistor random access memory 5 2006
7,598,512 Thin film fuse phase change cell with thermal isolation layer and manufacturing method 2 2006
7,772,581 Memory device having wide area phase change element and small electrode contact area 16 2006
7,504,653 Memory cell device with circumferentially-extending memory element 16 2006
7,510,929 Method for making memory cell device 1 2006
7,863,655 Phase change memory cells with dual access devices 1 2006
7,527,985 Method for manufacturing a resistor random access memory with reduced active area and reduced contact areas 1 2006
7,388,771 Methods of operating a bistable resistance random access memory with multiple memory layers and multilevel memory states 4 2006
8,067,762 Resistance random access memory structure for enhanced retention 1 2006
7,816,661 Air cell thermal isolation for a memory array formed of a programmable resistive material 0 2006
7,682,868 Method for making a keyhole opening during the manufacture of a memory cell 0 2006
7,476,587 Method for making a self-converged memory material element for memory cell 15 2006
7,697,316 Multi-level cell resistance random access memory with metal oxides 34 2006
7,903,447 Method, apparatus and computer program product for read before programming process on programmable resistive memory cell 0 2006
8,344,347 Multi-layer electrode structure 0 2006
7,688,619 Phase change memory cell and manufacturing method 44 2006
7,718,989 Resistor random access memory cell device 2 2006
7,786,460 Phase change memory device and manufacturing method 32 2007
7,440,315 Method, apparatus and computer program product for stepped reset programming process on programmable resistive memory cell 9 2007
7,433,226 Method, apparatus and computer program product for read before programming process on multiple programmable resistive memory cell 8 2007
7,483,292 Memory cell with separate read and program paths 3 2007
8,008,643 Phase change memory cell with heater and method for fabricating the same 0 2007
7,619,237 Programmable resistive memory cell with self-forming gap 2 2007
7,534,647 Damascene phase change RAM and manufacturing method 1 2007
7,956,344 Memory cell with memory element contacting ring-shaped upper end of bottom electrode 0 2007
7,786,461 Memory structure with reduced-size memory element between memory material portions 4 2007
7,755,076 self align side wall active phase change memory 9 2007
7,569,844 Memory cell sidewall contacting side electrode 23 2007
7,514,334 Thin film plate phase change RAM circuit and manufacturing method 46 2007
7,463,512 Memory element with reduced-current phase change element 7 2007
7,701,759 Memory cell device and programming methods 10 2007
8,513,637 4F2 self align fin bottom electrodes FET drive phase change memory 0 2007
7,483,316 Method and apparatus for refreshing programmable resistive memory 1 2007
7,884,342 Phase change memory bridge cell 0 2007
7,729,161 Phase change memory with dual word lines and source lines and method of operating same 4 2007
7,696,503 Multi-level memory cell having phase change element and asymmetrical thermal boundary 14 2007
8,178,386 Phase change memory cell array with self-converged bottom electrode and method for manufacturing 0 2007
7,642,125 Phase change memory cell in via array with self-aligned, self-converged bottom electrode and method for manufacturing 4 2007
7,663,135 Memory cell having a side electrode contact 5 2007
7,551,473 Programmable resistive memory with diode structure 13 2007
7,535,756 Method to tighten set distribution for PCRAM 9 2007
7,919,766 Method for making self aligning pillar memory cell device 2 2007
7,804,083 Phase change memory cell including a thermal protect bottom electrode and manufacturing methods 1 2007
7,646,631 Phase change memory cell having interface structures with essentially equal thermal impedances and manufacturing methods 1 2007
7,579,613 Thin film fuse phase change RAM and manufacturing method 10 2007
7,639,527 Phase change memory dynamic resistance test and manufacturing methods 1 2008
7,884,343 Phase change memory cell with filled sidewall memory element and method for fabricating the same 4 2008
7,879,643 Memory cell with memory element contacting an inverted T-shaped bottom electrode 2 2008
7,879,645 Fill-in etching free pore device 9 2008
7,619,311 Memory cell device with coplanar electrode surface and method 10 2008
8,158,965 Heating center PCRAM structure and methods for making 0 2008
7,932,101 Thermally contained/insulated phase change memory device and method 1 2008
8,084,842 Thermally stabilized electrode structure 1 2008
7,791,057 Memory cell having a buried phase change region and method for fabricating the same 5 2008
7,701,750 Phase change device having two or more substantial amorphous regions in high resistance state 9 2008
7,586,778 Methods of operating a bistable resistance random access memory with multiple memory layers and multilevel memory states 31 2008
8,415,651 Phase change memory cell having top and bottom sidewall contacts 0 2008
7,642,123 Thermally insulated phase change memory manufacturing method 3 2008
7,867,815 Spacer electrode small pin phase change RAM and manufacturing method 0 2008
7,777,215 Resistive memory structure with buffer layer 9 2008
7,932,506 Fully self-aligned pore-type memory cell having diode access device 2 2008
7,903,457 Multiple phase change materials in an integrated circuit for system on a chip application 3 2008
7,842,536 Vacuum jacket for phase change memory element 1 2008
7,719,913 Sensing circuit for PCRAM applications 1 2008
8,243,494 Self-aligned structure and method for confining a melting point in a resistor random access memory 0 2008
8,324,605 Dielectric mesh isolated phase change structure for phase change memory 0 2008
7,897,954 Dielectric-sandwiched pillar memory device 0 2008
7,932,129 Vertical side wall active pin structures in a phase change memory and manufacturing methods 0 2008
8,036,014 Phase change memory program method without over-reset 3 2008
7,902,538 Phase change memory cell with first and second transition temperature portions 1 2008
7,638,359 Method for making a self-converged void and bottom electrode for memory cell 2 2008
7,749,854 Method for making a self-converged memory material element for memory cell 0 2008
7,687,307 Vacuum jacketed electrode for phase change memory element 0 2008
7,869,270 Set algorithm for phase change memory cell 2 2008
8,089,137 Integrated circuit memory with single crystal silicon on silicide driver and manufacturing method 8 2009
7,923,285 Method for forming self-aligned thermal isolation cell for a variable resistance memory array 2 2009
8,107,283 Method for setting PCRAM devices 3 2009
8,030,635 Polysilicon plug bipolar transistor for phase change memory 2 2009
7,910,906 Memory cell device with circumferentially-extending memory element 0 2009
8,084,760 Ring-shaped electrode and manufacturing method for same 0 2009
8,173,987 Integrated circuit 3D phase change memory array and manufacturing method 0 2009
8,077,505 Bipolar switching of phase change device 1 2009
8,097,871 Low operational current phase change memory structures 0 2009
8,134,857 Methods for high speed reading operation of phase change memory and device employing same 1 2009
7,933,139 One-transistor, one-resistor, one-capacitor phase change memory 4 2009
7,972,893 Memory device manufacturing method 0 2009
8,350,316 Phase change memory cells having vertical channel access transistor and memory plane 0 2009
7,968,876 Phase change memory cell having vertical channel access transistor 1 2009
8,158,963 Programmable resistive RAM and manufacturing method 0 2009
8,406,033 Memory device and method for sensing and fixing margin cells 0 2009
8,064,247 Rewritable memory device based on segregation/re-absorption 0 2009
8,110,822 Thermal protect PCRAM structure and methods for making 1 2009
7,894,254 Refresh circuitry for phase change memory 3 2009
7,924,600 Methods of operating a bistable resistance random access memory with multiple memory layers and multilevel memory states 1 2009
8,198,619 Phase change memory cell structure 0 2009
8,064,248 2T2R-1T1R mix mode phase change memory array 1 2009
8,110,429 Bridge resistance random access memory device and method with a singular contact structure 0 2009
7,879,692 Programmable resistive memory cell with self-forming gap 0 2009
7,972,895 Memory cell device with coplanar electrode surface and method 2 2009
7,993,962 I-shaped phase change memory cell 0 2009
8,143,612 Phase change memory cell in via array with self-aligned, self-converged bottom electrode and method for manufacturing 0 2009
8,062,923 Thin film fuse phase change cell with thermal isolation pad and manufacturing method 0 2009
7,893,418 Phase change memory cell having interface structures with essentially equal thermal impedances and manufacturing methods 0 2009
7,964,863 Memory cell having a side electrode contact 0 2009
7,929,340 Phase change memory cell and manufacturing method 0 2010
7,964,468 Multi-level memory cell having phase change element and asymmetrical thermal boundary 1 2010
8,238,149 Methods and apparatus for reducing defect bits in phase change memory 1 2010
8,111,541 Method of a multi-level cell resistance random access memory with metal oxides 1 2010
7,920,415 Memory cell device and programming methods 0 2010
8,059,449 Phase change device having two or more substantial amorphous regions in high resistance state 0 2010
8,363,463 Phase change memory having one or more non-constant doping profiles 0 2010
8,178,387 Methods for reducing recrystallization time for a phase change material 0 2010
8,178,405 Resistor random access memory cell device 0 2010
7,978,509 Phase change memory with dual word lines and source lines and method of operating same 0 2010
8,080,440 Resistor random access memory cell with L-shaped electrode 0 2010
8,178,388 Programmable resistive RAM and manufacturing method 1 2010
8,237,148 self align side wall active phase change memory 0 2010
8,310,864 Self-aligned bit line under word line memory array 0 2010
7,964,437 Memory device having wide area phase change element and small electrode contact area 0 2010
7,943,920 Resistive memory structure with buffer layer 0 2010
8,008,114 Phase change memory device and manufacturing method 0 2010
7,875,493 Memory structure with reduced-size memory element between memory material portions 0 2010
8,039,392 Resistor random access memory cell with reduced active area and reduced contact areas 1 2010
8,395,935 Cross-point self-aligned reduced cell size phase change memory 0 2010
8,143,089 Self-align planerized bottom electrode phase change memory and manufacturing method 0 2010
8,097,487 Method for making a phase change memory device with vacuum cell thermal isolation 1 2010
8,110,430 Vacuum jacket for phase change memory element 0 2010
8,497,705 Phase change device for interconnection of programmable logic device 0 2010
8,467,238 Dynamic pulse operation for phase change memory 0 2010
8,110,456 Method for making a self aligning memory device 0 2010
8,094,488 Set algorithm for phase change memory cell 0 2010
8,263,960 Phase change memory cell with filled sidewall memory element and method for fabricating the same 0 2010
8,315,088 Multiple phase change materials in an integrated circuit for system on a chip application 0 2011
8,228,721 Refresh circuitry for phase change memory 0 2011
8,222,071 Method for making self aligning pillar memory cell device 0 2011
8,313,979 Phase change memory cell having vertical channel access transistor 0 2011
8,324,681 Stacked non-volatile memory device and methods for fabricating the same 0 2011
8,237,144 Polysilicon plug bipolar transistor for phase change memory 0 2011
8,293,600 Thermally stabilized electrode structure 0 2011
 
MICRON TECHNOLOGY, INC. (140)
6,951,805 Method of forming integrated circuitry, method of forming memory circuitry, and method of forming random access memory circuitry 7 2001
6,955,940 Method of forming chalcogenide comprising devices 24 2001
6,815,818 Electrode structure for use in an integrated circuit 13 2001
6,873,538 Programmable conductor random access memory and a method for writing thereto 16 2001
6,909,656 PCRAM rewrite prevention 10 2002
6,791,885 Programmable conductor random access memory and method for sensing same 10 2002
6,891,749 Resistance variable ‘on ’ memory 20 2002
6,809,362 Multiple data state memory cell 14 2002
6,937,528 Variable resistance memory and method for sensing same 12 2002
6,849,868 Methods and apparatus for resistance variable material cells 14 2002
6,864,500 Programmable conductor memory cell structure 195 2002
6,858,482 Method of manufacture of programmable switching circuits and memory cells employing a glass layer 17 2002
6,855,975 Thin film diode integrated with chalcogenide memory cell 25 2002
7,015,494 Assemblies displaying differential negative resistance 11 2002
7,071,021 PCRAM memory cell and method of making same 13 2002
7,018,863 Method of manufacture of a resistance variable memory cell 9 2002
7,364,644 Silver selenide film stoichiometry and morphology control in sputter deposition 3 2002
7,163,837 Method of forming a resistance variable memory element 6 2002
7,010,644 Software refreshed memory device and method 7 2002
6,867,114 Methods to form a memory cell with metal-rich metal chalcogenide 17 2002
6,867,996 Single-polarity programmable resistance-variable memory element 35 2002
6,864,521 Method to control silver concentration in a resistance variable memory element 18 2002
6,856,002 Graded GexSe100-x concentration in PCRAM 19 2002
6,949,453 Agglomeration elimination for metal sputter deposition of chalcogenides 3 2002
6,878,569 Agglomeration elimination for metal sputter deposition of chalcogenides 9 2002
6,894,304 Apparatus and method for dual cell common electrode PCRAM memory device 112 2003
6,813,178 Chalcogenide glass constant current device, and its method of fabrication and operation 17 2003
7,022,579 Method for filling via with metal 2 2003
7,050,327 Differential negative resistance memory 17 2003
6,888,155 Stoichiometry for chalcogenide glasses useful for memory devices and method of formation 21 2003
6,961,277 Method of refreshing a PCRAM memory device 25 2003
7,061,004 Resistance variable memory elements and methods of formation 6 2003
6,812,087 Methods of forming non-volatile resistance variable devices and methods of forming silver selenide comprising structures 11 2003
6,858,465 Elimination of dendrite formation during metal/chalcogenide glass deposition 3 2003
6,833,559 Non-volatile resistance variable device 3 2003
6,882,578 PCRAM rewrite prevention 4 2003
6,998,697 Non-volatile resistance variable devices 12 2003
7,528,401 Agglomeration elimination for metal sputter deposition of chalcogenides 2 2004
6,974,965 Agglomeration elimination for metal sputter deposition of chalcogenides 4 2004
7,105,864 Non-volatile zero field splitting resonance memory 6 2004
7,056,762 Methods to form a memory cell with metal-rich metal chalcogenide 9 2004
7,022,555 Methods of forming a semiconductor memory device 1 2004
6,949,402 Method of forming a non-volatile resistance variable device 1 2004
6,953,720 Methods for forming chalcogenide glass-based memory elements 13 2004
7,479,650 Method of manufacture of programmable conductor memory 15 2004
7,098,068 Method of forming a chalcogenide material containing device 6 2004
7,087,454 Fabrication of single polarity programmable resistance structure 9 2004
7,087,919 Layered resistance variable memory device and method of fabrication 12 2004
6,908,808 Method of forming and storing data in a multiple state memory cell 4 2004
7,002,833 Complementary bit resistance memory sensor and method of operation 31 2004
7,115,504 Method of forming electrode structure for use in an integrated circuit 8 2004
7,115,992 Electrode structure for use in an integrated circuit 3 2004
7,332,401 Method of fabricating an electrode structure for use in an integrated circuit 9 2004
7,459,764 Method of manufacture of a PCRAM memory cell 6 2004
7,190,048 Resistance variable memory device and method of fabrication 10 2004
7,365,411 Resistance variable memory with temperature tolerant materials 19 2004
7,354,793 Method of forming a PCRAM device incorporating a resistance-variable chalocogenide element 6 2004
6,954,385 Method and apparatus for sensing resistive memory state 15 2004
7,030,410 Resistance variable device 8 2004
7,209,378 Columnar 1T-N memory cell structure 7 2004
7,151,688 Sensing of resistance variable memory devices 7 2004
7,094,700 Plasma etching methods and methods of forming memory devices comprising a chalcogenide comprising layer received operably proximate conductive electrodes 1 2004
7,223,627 Memory element and its method of formation 6 2004
7,329,558 Differential negative resistance memory 7 2004
7,112,484 Thin film diode integrated with chalcogenide memory cell 5 2004
7,049,009 Silver selenide film stoichiometry and morphology control in sputter deposition 3 2004
7,374,174 Small electrode for resistance variable devices 6 2004
7,317,200 SnSe-based limited reprogrammable cell 6 2005
7,224,632 Rewrite prevention in a variable resistance memory 4 2005
7,202,520 Multiple data state memory cell 5 2005
7,348,205 Method of forming resistance variable devices 5 2005
7,709,289 Memory elements having patterned electrodes and method of forming the same 0 2005
7,427,770 Memory array for increased bit density 4 2005
7,269,044 Method and apparatus for accessing a memory array 1 2005
7,385,868 Method of refreshing a PCRAM memory device 6 2005
7,269,079 Power circuits for reducing a number of power supply voltage taps required for sensing a resistive memory 1 2005
7,326,950 Memory device with switching glass layer 7 2005
7,233,520 Process for erasing chalcogenide variable resistance memory bits 7 2005
7,274,034 Resistance variable memory device with sputtered metal-chalcogenide region and method of fabrication 7 2005
7,332,735 Phase change memory cell and method of formation 16 2005
7,317,567 Method and apparatus for providing color changing thin film material 7 2005
7,518,212 concentration in PCRAM 6 2005
7,579,615 Access transistor for memory device 5 2005
7,304,368 Chalcogenide-based electrokinetic memory element and method of forming the same 6 2005
7,251,154 Method and apparatus providing a cross-point memory array using a variable resistance memory cell and capacitance 14 2005
7,277,313 Resistance variable memory element with threshold device and method of forming the same 6 2005
7,199,444 Memory device, programmable resistance memory cell and memory array 3 2005
7,242,603 Method of operating a complementary bit resistance memory sensor 7 2005
7,294,527 Method of forming a memory cell 6 2005
7,307,908 Software refreshed memory device and method 4 2005
7,235,419 Method of making a memory cell 4 2005
7,550,818 Method of manufacture of a PCRAM memory cell 5 2006
7,396,699 Method of forming non-volatile resistance variable devices and method of forming a programmable memory cell of memory circuitry 6 2006
7,547,905 Programmable conductor memory cell structure and method therefor 0 2006
7,723,713 Layered resistance variable memory device and method of fabrication 8 2006
7,393,798 Resistance variable memory with temperature tolerant materials 13 2006
7,190,608 Sensing of resistance variable memory devices 7 2006
7,459,336 Method of forming a chalcogenide material containing device 0 2006
7,366,003 Method of operating a complementary bit resistance memory sensor and method of operation 0 2006
7,692,177 Resistance variable memory element and its method of formation 5 2006
7,348,209 Resistance variable memory device and method of fabrication 6 2006
7,700,422 Methods of forming memory arrays for increased bit density 0 2006
7,910,397 Small electrode for resistance variable devices 0 2006
7,663,133 Memory elements having patterned electrodes and method of forming the same 0 2006
7,289,349 Resistance variable memory element with threshold device and method of forming the same 6 2006
7,366,045 Power circuits for reducing a number of power supply voltage taps required for sensing a resistive memory 0 2006
7,498,231 Multiple data state memory cell 0 2007
7,282,783 Resistance variable memory device and method of fabrication 7 2007
7,709,885 Access transistor for memory device 11 2007
7,994,491 PCRAM device with switching glass layer 1 2007
7,759,665 PCRAM device with switching glass layer 5 2007
7,643,333 Process for erasing chalcogenide variable resistance memory bits 0 2007
7,687,793 Resistance variable memory cells 11 2007
7,564,731 Software refreshed memory device and method 3 2007
7,668,000 Method and apparatus providing a cross-point memory array using a variable resistance memory cell and capacitance 1 2007
7,433,227 Resistance variable memory device with sputtered metal-chalcogenide region and method of fabrication 8 2007
8,101,936 SnSe-based limited reprogrammable cell 0 2007
7,663,137 Phase change memory cell and method of formation 6 2007
7,745,808 Differential negative resistance memory 6 2007
7,749,853 Method of forming a variable resistance memory device comprising tin selenide 5 2008
7,863,597 Resistance variable memory devices with passivating material 1 2008
7,879,646 Assemblies displaying differential negative resistance, semiconductor constructions, and methods of forming assemblies displaying differential negative resistance 1 2008
7,785,976 Method of forming a memory device incorporating a resistance-variable chalcogenide element 6 2008
7,586,777 Resistance variable memory with temperature tolerant materials 8 2008
7,869,249 Complementary bit PCRAM sense amplifier and method of operation 0 2008
7,551,509 Power circuits for reducing a number of power supply voltage taps required for sensing a resistive memory 1 2008
7,682,992 Resistance variable memory with temperature tolerant materials 6 2008
7,701,760 Resistance variable memory device with sputtered metal-chalcogenide region and method of fabrication 8 2008
7,768,861 Software refreshed memory device and method 0 2009
7,791,058 Enhanced memory density resistance variable memory cells, arrays, devices and systems including the same, and methods of fabrication 3 2009
7,978,500 Method and apparatus providing a cross-point memory array using a variable resistance memory cell and capacitance 0 2010
7,924,603 Resistance variable memory with temperature tolerant materials 1 2010
7,968,927 Memory array for increased bit density and method of forming the same 0 2010
7,940,556 Resistance variable memory device with sputtered metal-chalcogenide region and method of fabrication 1 2010
8,263,958 Layered resistance variable memory device and method of fabrication 0 2010
8,334,186 Method of forming a memory device incorporating a resistance variable chalcogenide element 0 2010
7,944,768 Software refreshed memory device and method 0 2010
8,030,636 Enhanced memory density resistance variable memory cells, arrays, devices and systems including the same, and methods of fabrication 0 2010
8,189,366 Method and apparatus providing a cross-point memory array using a variable resistance memory cell and capacitance 1 2011
8,487,288 Memory device incorporating a resistance variable chalcogenide element 0 2011
 
ROUND ROCK RESEARCH, LLC (11)
6,867,064 Method to alter chalcogenide glass for improved switching characteristics 11 2002
6,890,790 Co-sputter deposition of metal-doped chalcogenides 3 2002
6,903,361 Non-volatile memory structure 29 2003
7,153,721 Resistance variable memory elements based on polarized silver-selenide network growth 6 2004
7,583,551 Power management control and controlling memory refresh operations 1 2004
7,202,104 Co-sputter deposition of metal-doped chalcogenides 1 2004
6,946,347 Non-volatile memory structure 8 2004
7,276,722 Non-volatile memory structure 6 2005
7,446,393 Co-sputter deposition of metal-doped chalcogenides 0 2007
7,491,963 Non-volatile memory structure 0 2007
7,964,436 Co-sputter deposition of metal-doped chalcogenides 0 2008
 
NANOCHIP, INC. (9)
6,985,377 Phase change media for high density data storage 10 2003
7,379,412 Methods for writing and reading highly resolved domains for high density data storage 1 2004
7,301,887 Methods for erasing bit cells in a high density data storage device 2 2004
7,463,573 Patterned media for a high density data storage device 5 2005
7,367,119 Method for forming a reinforced tip for a probe storage device 2 2005
7,309,630 Method for forming patterned media for a high density data storage device 81 2005
7,336,524 Atomic probes and media for high density data storage 2 2005
7,391,707 Devices and methods of detecting movement between media and probe tip in a probe data storage system 2 2007
7,414,953 Memory having a layer with electrical conductivity anisotropy 3 2007
 
OVONYX, INC. (5)
7,319,057 Phase change material memory device 5 2001
6,869,841 Carbon-containing interfacial layer for phase-change memory 7 2003
7,399,655 Damascene conductive line for contacting an underlying memory element 2 2003
7,728,352 Damascene conductive line for contacting an underlying memory element 1 2008
8,440,535 Forming a phase change memory with an ovonic threshold switch 0 2012
 
QIMONDA AG (4)
7,515,461 Current compliant sensing architecture for multilevel phase change memory 50 2007
8,138,028 Method for manufacturing a phase change memory device with pillar bottom electrode 0 2007
8,030,634 Memory array with diode driver and method for fabricating the same 1 2008
7,825,398 Memory cell having improved mechanical stability 1 2008
 
INTEL CORPORATION (2)
7,242,019 Shunted phase change memory 7 2002
6,707,712 Method for reading a structural phase-change memory 186 2003
 
INTERNATIONAL BUSINESS MACHINES CORPORATION (2)
7,038,231 Non-planarized, self-aligned, non-volatile phase-change memory array and method of formation 3 2004
7,682,866 Non-planarized, self-aligned, non-volatile phase-change memory array and method of formation 0 2006
 
APTINA IMAGING CORPORATION (1)
6,930,909 Memory device and methods of controlling resistance variation and resistance profile drift 36 2003
 
BOISE STATE UNIVERSITY (1)
8,467,236 Continuously variable resistor 0 2010
 
SILICON STORAGE TECHNOLOGY, INC. (1)
6,937,507 Memory device and method of operating same 216 2003
 
Other [Check patent profile for assignment information] (1)
8,587,983 Resistance random access memory structure for enhanced retention 0 2011

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Surcharge - 11.5 year - Late payment within 6 months $160.00 $80.00 $40.00
Surcharge after expiration - Late payment is unavoidable $700.00 $350.00 $175.00
Surcharge after expiration - Late payment is unintentional $1,640.00 $820.00 $410.00