Single level metal memory cell using chalcogenide cladding

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United States of America Patent

PATENT NO 6567293
SERIAL NO

09675285

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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An apparatus including a volume of phase change material disposed between a first conductor and a second conductor on a substrate, and a plurality of electrodes coupled to the volume of phase change material and the first conductor. A method including introducing, over a first conductor on a substrate, a plurality of electrodes coupled to the first conductor, introducing a phase change material over the plurality of electrodes and in electrical communication with the plurality of electrodes, and introducing a second conductor over the phase change material and coupled to the phase change material.

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Patent Owner(s)

Patent OwnerAddressTotal Patents
OVONYX MEMORY TECHNOLOGY, LLCALEXANDRIA, VA814

International Classification(s)

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Gill, Manzur Cupertino, CA 77 2600
Lowrey, Tyler A San Jose, CA 209 10739

Cited Art Landscape

Patent Info (Count) # Cites Year
 
ROUND ROCK RESEARCH, LLC (9)
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6031287 Contact structure and memory element incorporating the same 468 1997
5970336 Method of making memory cell incorporating a chalcogenide element 281 1997
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6229157 Method of forming a polysilicon diode and devices incorporating such diode 50 1999
6153890 Memory cell incorporating a chalcogenide element 263 1999
 
OVONYX MEMORY TECHNOLOGY, LLC (4)
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5933365 Memory element with energy control mechanism 409 1997
6087674 Memory element with memory material comprising phase-change material and dielectric material 555 1998
6339544 Method to enhance performance of thermal resistor device 412 2000
 
OVONYX, INC. (1)
5296716 Electrically erasable, directly overwritable, multibit single cell memory elements and arrays fabricated therefrom 473 1991
* Cited By Examiner

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Patent Info (Count) # Cites Year
 
SILICON STORAGE TECHNOLOGY, INC. (2)
6937507 Memory device and method of operating same 243 2003
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Other [Check patent profile for assignment information] (8)
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BOISE STATE UNIVERSITY (2)
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OVONYX MEMORY TECHNOLOGY, LLC (62)
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* 2008/0116,440 Resistance Random Access Memory Structure for Enhanced Retention 7 2006
7816661 Air cell thermal isolation for a memory array formed of a programmable resistive material 5 2006
* 2008/0266,940 Air Cell Thermal Isolation for a Memory Array Formed of a Programmable Resistive Material 12 2006
7682868 Method for making a keyhole opening during the manufacture of a memory cell 0 2006
7476587 Method for making a self-converged memory material element for memory cell 23 2006
* 2008/0138,931 Method for Making a Self-Converged Void and Bottom Electrode for Memoery Cell 50 2006
* 2008/0138,929 Method for Making a Self-Converged Memory Material Element for Memory Cell 65 2006
7697316 Multi-level cell resistance random access memory with metal oxides 82 2006
* 2008/0135,824 Method and Structure of a Multi-Level Cell Resistance Random Access Memory with Metal Oxides 14 2006
7903447 Method, apparatus and computer program product for read before programming process on programmable resistive memory cell 2 2006
* 2008/0144,353 Method, Apparatus and Computer Program Product for Read Before Programming Process on Programmable Resistive Memory Cell 3 2006
8344347 Multi-layer electrode structure 0 2006
7688619 Phase change memory cell and manufacturing method 93 2006
7718989 Resistor random access memory cell device 10 2006
* 2008/0157,053 Resistor Random Access Memory Cell Device 40 2006
7786460 Phase change memory device and manufacturing method 77 2007
7440315 Method, apparatus and computer program product for stepped reset programming process on programmable resistive memory cell 20 2007
7433226 Method, apparatus and computer program product for read before programming process on multiple programmable resistive memory cell 8 2007
* 2007/0109,843 Phase Change Memory Device and Manufacturing Method 161 2007
7483292 Memory cell with separate read and program paths 5 2007
* 2008/0186,761 Memory Cell with Separate Read and Program Paths 2 2007
8008643 Phase change memory cell with heater and method for fabricating the same 0 2007
7619237 Programmable resistive memory cell with self-forming gap 4 2007
7534647 Damascene phase change RAM and manufacturing method 4 2007
* 2008/0197,334 Phase Change Memory Cell with Heater and Method for Fabricating the Same 90 2007
7956344 Memory cell with memory element contacting ring-shaped upper end of bottom electrode 5 2007
* 2008/0203,375 Memory Cell with Memory Element Contacting Ring-Shaped Upper End of Bottom Electrode 2 2007
7786461 Memory structure with reduced-size memory element between memory material portions 13 2007
8610098 Phase change memory bridge cell with diode isolation device 0 2007
7755076 self align side wall active phase change memory 45 2007
7569844 Memory cell sidewall contacting side electrode 38 2007
* 2008/0258,126 Memory Cell Sidewall Contacting Side Electrode 39 2007
7514334 Thin film plate phase change RAM circuit and manufacturing method 61 2007
7463512 Memory element with reduced-current phase change element 21 2007
* 2008/0192,534 MEMORY ELEMENT WITH REDUCED-CURRENT PHASE CHANGE ELEMENT 20 2007
7701759 Memory cell device and programming methods 13 2007
* 2008/0186,755 MEMORY CELL DEVICE AND PROGRAMMING METHODS 89 2007
8513637 4F2 self align fin bottom electrodes FET drive phase change memory 1 2007
7483316 Method and apparatus for refreshing programmable resistive memory 1 2007
* 2008/0266,933 Method and Apparatus for Refreshing Programmable Resistive Memory 8 2007
7884342 Phase change memory bridge cell 0 2007
* 2009/0032,796 PHASE CHANGE MEMORY BRIDGE CELL 6 2007
7729161 Phase change memory with dual word lines and source lines and method of operating same 7 2007
* 2009/0034,323 PHASE CHANGE MEMORY WITH DUAL WORD LINES AND SOURCE LINES AND METHOD OF OPERATING SAME 9 2007
9018615 Resistor random access memory structure having a defined small area of electrical contact 0 2007
7696503 Multi-level memory cell having phase change element and asymmetrical thermal boundary 21 2007
8178386 Phase change memory cell array with self-converged bottom electrode and method for manufacturing 4 2007
7642125 Phase change memory cell in via array with self-aligned, self-converged bottom electrode and method for manufacturing 21 2007
* 2009/0072,216 PHASE CHANGE MEMORY CELL ARRAY WITH SELF-CONVERGED BOTTOM ELECTRODE AND METHOD FOR MANUFACTURING 14 2007
* 2009/0072,215 PHASE CHANGE MEMORY CELL IN VIA ARRAY WITH SELF-ALIGNED, SELF-CONVERGED BOTTOM ELECTRODE AND METHOD FOR MANUFACTURING 43 2007
7663135 Memory cell having a side electrode contact 5 2007
7551473 Programmable resistive memory with diode structure 21 2007
7535756 Method to tighten set distribution for PCRAM 13 2007
7919766 Method for making self aligning pillar memory cell device 16 2007
7804083 Phase change memory cell including a thermal protect bottom electrode and manufacturing methods 6 2007
* 2009/0122,588 PHASE CHANGE MEMORY CELL INCLUDING A THERMAL PROTECT BOTTOM ELECTRODE AND MANUFACTURING METHODS 7 2007
7646631 Phase change memory cell having interface structures with essentially equal thermal impedances and manufacturing methods 16 2007
* 2009/0147,564 PHASE CHANGE MEMORY CELL HAVING INTERFACE STRUCTURES WITH ESSENTIALLY EQUAL THERMAL IMPEDANCES AND MANUFACTURING METHODS 18 2007
7579613 Thin film fuse phase change RAM and manufacturing method 21 2007
7639527 Phase change memory dynamic resistance test and manufacturing methods 4 2008
7884343 Phase change memory cell with filled sidewall memory element and method for fabricating the same 10 2008
7879643 Memory cell with memory element contacting an inverted T-shaped bottom electrode 3 2008
* 2008/0191,186 PHASE CHANGE MEMORY CELL WITH FILLED SIDEWALL MEMORY ELEMENT AND METHOD FOR FABRICATING THE SAME 7 2008
7879645 Fill-in etching free pore device 13 2008
* 2009/0189,138 FILL-IN ETCHING FREE PORE DEVICE 6 2008
7619311 Memory cell device with coplanar electrode surface and method 14 2008
* 2008/0185,730 MEMORY CELL DEVICE WITH COPLANAR ELECTRODE SURFACE AND METHOD 9 2008
8158965 Heating center PCRAM structure and methods for making 2 2008
7932101 Thermally contained/insulated phase change memory device and method 5 2008
* 2008/0166,875 THERMALLY CONTAINED/INSULATED PHASE CHANGE MEMORY DEVICE AND METHOD (COMBINED) 88 2008
8084842 Thermally stabilized electrode structure 4 2008
* 2009/0242,880 THERMALLY STABILIZED ELECTRODE STRUCTURE 2 2008
7791057 Memory cell having a buried phase change region and method for fabricating the same 13 2008
* 2009/0261,313 MEMORY CELL HAVING A BURIED PHASE CHANGE REGION AND METHOD FOR FABRICATING THE SAME 16 2008
7701750 Phase change device having two or more substantial amorphous regions in high resistance state 14 2008
7586778 Methods of operating a bistable resistance random access memory with multiple memory layers and multilevel memory states 77 2008
8415651 Phase change memory cell having top and bottom sidewall contacts 2 2008
* 2009/0309,087 PHASE CHANGE MEMORY CELL HAVING TOP AND BOTTOM SIDEWALL CONTACTS 14 2008
7642123 Thermally insulated phase change memory manufacturing method 4 2008
* 2008/0268,565 THERMALLY INSULATED PHASE CHANGE MEMORY MANUFACTURING METHOD 4 2008
7867815 Spacer electrode small pin phase change RAM and manufacturing method 2 2008
7777215 Resistive memory structure with buffer layer 39 2008
7932506 Fully self-aligned pore-type memory cell having diode access device 4 2008
* 2010/0019,215 MUSHROOM TYPE MEMORY CELL HAVING SELF-ALIGNED BOTTOM ELECTRODE AND DIODE ACCESS DEVICE 17 2008
7903457 Multiple phase change materials in an integrated circuit for system on a chip application 8 2008
* 2010/0046,285 MULTIPLE PHASE CHANGE MATERIALS IN AN INTEGRATED CIRCUIT FOR SYSTEM ON A CHIP APPLICATION 13 2008
7842536 Vacuum jacket for phase change memory element 1 2008
* 2009/0023,242 VACUUM JACKET FOR PHASE CHANGE MEMORY ELEMENT 60 2008
7719913 Sensing circuit for PCRAM applications 3 2008
8243494 Self-aligned structure and method for confining a melting point in a resistor random access memory 0 2008
8324605 Dielectric mesh isolated phase change structure for phase change memory 3 2008
7897954 Dielectric-sandwiched pillar memory device 0 2008
7932129 Vertical side wall active pin structures in a phase change memory and manufacturing methods 2 2008
* 2009/0042,335 VERTICAL SIDE WALL ACTIVE PIN STRUCTURES IN A PHASE CHANGE MEMORY AND MANUFACTURING METHODS 60 2008
8036014 Phase change memory program method without over-reset 11 2008
7902538 Phase change memory cell with first and second transition temperature portions 2 2008
* 2010/0110,778 PHASE CHANGE MEMORY PROGRAM METHOD WITHOUT OVER-RESET 1 2008
8907316 Memory cell access device having a pn-junction with polycrystalline and single crystal semiconductor regions 1 2008
8664689 Memory cell access device having a pn-junction with polycrystalline plug and single-crystal semiconductor regions 0 2008
* 2010/0117,048 MEMORY CELL ACCESS DEVICE HAVING A PN-JUNCTION WITH POLYCRYSTALLINE AND SINGLE-CRYSTAL SEMICONDUCTOR REGIONS 5 2008
7638359 Method for making a self-converged void and bottom electrode for memory cell 5 2008
* 2009/0104,771 METHOD FOR MAKING A SELF-CONVERGED VOID AND BOTTOM ELECTRODE FOR MEMORY CELL 9 2008
7749854 Method for making a self-converged memory material element for memory cell 0 2008
7687307 Vacuum jacketed electrode for phase change memory element 1 2008
* 2009/0098,716 METHOD FOR MAKING A SELF-CONVERGED MEMORY MATERIAL ELEMENT FOR MEMORY CELL 7 2008
* 2009/0098,678 VACUUM JACKETED ELECTRODE FOR PHASE CHANGE MEMORY ELEMENT 43 2008
7869270 Set algorithm for phase change memory cell 5 2008
8089137 Integrated circuit memory with single crystal silicon on silicide driver and manufacturing method 67 2009
* 2010/0171,086 INTEGRATED CIRCUIT MEMORY WITH SINGLE CRYSTAL SILICON ON SILICIDE DRIVER AND MANUFACTURING METHOD 93 2009
7923285 Method for forming self-aligned thermal isolation cell for a variable resistance memory array 8 2009
* 2009/0148,981 METHOD FOR FORMING SELF-ALIGNED THERMAL ISOLATION CELL FOR A VARIABLE RESISTANCE MEMORY ARRAY 20 2009
8107283 Method for setting PCRAM devices 3 2009
8030635 Polysilicon plug bipolar transistor for phase change memory 2 2009
8933536 Polysilicon pillar bipolar transistor with self-aligned memory element 1 2009
7910906 Memory cell device with circumferentially-extending memory element 1 2009
8084760 Ring-shaped electrode and manufacturing method for same 4 2009
8173987 Integrated circuit 3D phase change memory array and manufacturing method 23 2009
8077505 Bipolar switching of phase change device 1 2009
8097871 Low operational current phase change memory structures 1 2009
8134857 Methods for high speed reading operation of phase change memory and device employing same 1 2009
7933139 One-transistor, one-resistor, one-capacitor phase change memory 23 2009
7972893 Memory device manufacturing method 0 2009
8350316 Phase change memory cells having vertical channel access transistor and memory plane 1 2009
7968876 Phase change memory cell having vertical channel access transistor 9 2009
8158963 Programmable resistive RAM and manufacturing method 0 2009
* 2009/0236,743 Programmable Resistive RAM and Manufacturing Method 0 2009
8809829 Phase change memory having stabilized microstructure and manufacturing method 0 2009
8406033 Memory device and method for sensing and fixing margin cells 6 2009
8064247 Rewritable memory device based on segregation/re-absorption 2 2009
8110822 Thermal protect PCRAM structure and methods for making 15 2009
7894254 Refresh circuitry for phase change memory 5 2009
7924600 Methods of operating a bistable resistance random access memory with multiple memory layers and multilevel memory states 4 2009
8198619 Phase change memory cell structure 2 2009
8064248 2T2R-1T1R mix mode phase change memory array 4 2009
8110429 Bridge resistance random access memory device and method with a singular contact structure 0 2009
7879692 Programmable resistive memory cell with self-forming gap 1 2009
* 2010/0029,062 PROGRAMMABLE RESISTIVE MEMORY CELL WITH SELF-FORMING GAP 7 2009
7972895 Memory cell device with coplanar electrode surface and method 2 2009
* 2010/0029,042 MEMORY CELL DEVICE WITH COPLANAR ELECTRODE SURFACE AND METHOD 2 2009
7993962 I-shaped phase change memory cell 2 2009
8143612 Phase change memory cell in via array with self-aligned, self-converged bottom electrode and method for manufacturing 2 2009
* 2010/0065,808 PHASE CHANGE MEMORY CELL IN VIA ARRAY WITH SELF-ALIGNED, SELF-CONVERGED BOTTOM ELECTRODE AND METHOD FOR MANUFACTURING 5 2009
8062923 Thin film fuse phase change cell with thermal isolation pad and manufacturing method 2 2009
7893418 Phase change memory cell having interface structures with essentially equal thermal impedances and manufacturing methods 0 2009
* 2010/0072,447 PHASE CHANGE MEMORY CELL HAVING INTERFACE STRUCTURES WITH ESSENTIALLY EQUAL THERMAL IMPEDANCES AND MANUFACTURING METHODS 14 2009
7964863 Memory cell having a side electrode contact 1 2009
7929340 Phase change memory cell and manufacturing method 6 2010
7964468 Multi-level memory cell having phase change element and asymmetrical thermal boundary 2 2010
* 2010/0151,652 MULTI-LEVEL MEMORY CELL HAVING PHASE CHANGE ELEMENT AND ASYMMETRICAL THERMAL BOUNDARY 26 2010
8238149 Methods and apparatus for reducing defect bits in phase change memory 5 2010
8111541 Method of a multi-level cell resistance random access memory with metal oxides 4 2010
7920415 Memory cell device and programming methods 0 2010
* 2010/0216,279 METHOD OF A MULTI-LEVEL CELL RESISTANCE RANDOM ACCESS MEMORY WITH METAL OXIDES 5 2010
* 2010/0157,665 MEMORY CELL DEVICE AND PROGRAMMING METHODS 8 2010
8059449 Phase change device having two or more substantial amorphous regions in high resistance state 1 2010
8363463 Phase change memory having one or more non-constant doping profiles 1 2010
8178387 Methods for reducing recrystallization time for a phase change material 4 2010
8178405 Resistor random access memory cell device 3 2010
7978509 Phase change memory with dual word lines and source lines and method of operating same 3 2010
8080440 Resistor random access memory cell with L-shaped electrode 5 2010
* 2010/0207,095 RESISTOR RANDOM ACCESS MEMORY CELL WITH L-SHAPED ELECTRODE 14 2010
8178388 Programmable resistive RAM and manufacturing method 3 2010
8729521 Self aligned fin-type programmable memory cell 2 2010
8237148 self align side wall active phase change memory 0 2010
* 2010/0237,316 4F2 SELF ALIGN SIDE WALL ACTIVE PHASE CHANGE MEMORY 4 2010
8310864 Self-aligned bit line under word line memory array 5 2010
7964437 Memory device having wide area phase change element and small electrode contact area 4 2010
7943920 Resistive memory structure with buffer layer 3 2010
* 2010/0276,658 Resistive Memory Structure with Buffer Layer 4 2010
8008114 Phase change memory device and manufacturing method 1 2010
* 2010/0291,747 Phase Change Memory Device and Manufacturing Method 28 2010
7875493 Memory structure with reduced-size memory element between memory material portions 5 2010
8039392 Resistor random access memory cell with reduced active area and reduced contact areas 2 2010
8395935 Cross-point self-aligned reduced cell size phase change memory 6 2010
8143089 Self-align planerized bottom electrode phase change memory and manufacturing method 3 2010
8097487 Method for making a phase change memory device with vacuum cell thermal isolation 2 2010
* 2011/0034,003 Vacuum Cell Thermal Isolation for a Phase Change Memory Device 23 2010
8110430 Vacuum jacket for phase change memory element 2 2010
8497705 Phase change device for interconnection of programmable logic device 0 2010
8467238 Dynamic pulse operation for phase change memory 1 2010
8110456 Method for making a self aligning memory device 0 2010
8094488 Set algorithm for phase change memory cell 4 2010
* 2011/0075,475 SET ALGORITHM FOR PHASE CHANGE MEMORY CELL 1 2010
8263960 Phase change memory cell with filled sidewall memory element and method for fabricating the same 1 2010
* 2011/0133,150 Phase Change Memory Cell with Filled Sidewall Memory Element and Method for Fabricating the Same 4 2010
8315088 Multiple phase change materials in an integrated circuit for system on a chip application 1 2011
8228721 Refresh circuitry for phase change memory 3 2011
8912515 Manufacturing method for pipe-shaped electrode phase change memory 0 2011
* 2011/0163,288 Manufacturing Method for Pipe-Shaped Electrode Phase Change Memory 2 2011
8222071 Method for making self aligning pillar memory cell device 0 2011
8313979 Phase change memory cell having vertical channel access transistor 1 2011
* 2011/0217,818 PHASE CHANGE MEMORY CELL HAVING VERTICAL CHANNEL ACCESS TRANSISTOR 7 2011
8324681 Stacked non-volatile memory device and methods for fabricating the same 0 2011
8237144 Polysilicon plug bipolar transistor for phase change memory 0 2011
8587983 Resistance random access memory structure for enhanced retention 3 2011
8987700 Thermally confined electrode for programmable resistance memory 1 2011
8293600 Thermally stabilized electrode structure 1 2011
8916845 Low operational current phase change memory structures 0 2011
8779408 Phase change memory cell structure 0 2012
8860111 Phase change memory cell array with self-converged bottom electrode and method for manufacturing 0 2012
8624236 Phase change memory cell having vertical channel access transistor 2 2012
9076964 Methods for forming resistance random access memory structure 0 2013
9559113 SSL/GSL gate oxide in 3D vertical channel NAND 0 2014
8853047 Self aligned fin-type programmable memory cell 0 2014
9159412 Staggered write and verify for phase change memory 0 2014
9336879 Multiple phase change materials in an integrated circuit for system on a chip application 0 2015
 
INTEL CORPORATION (2)
* 7242019 Shunted phase change memory 7 2002
* 6707712 Method for reading a structural phase-change memory 199 2003
 
SOUTH HAMPTON, UNIVERSITY OF (1)
9029823 Phase change memory devices and methods comprising gallium, lanthanide and chalcogenide compounds 1 2013
 
WINBOND ELECTRONICS CORP. (1)
* 2007/0290,185 Phase change memory cells and methods for fabricating the same 3 2006
 
UNIVERSITY OF SOUTHAMPTON (1)
8624215 Phase change memory devices and methods comprising gallium, lanthanide and chalcogenide compounds 4 2006
* Cited By Examiner