Single level metal memory cell using chalcogenide cladding

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United States of America Patent

PATENT NO 6567293
SERIAL NO

09675285

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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An apparatus including a volume of phase change material disposed between a first conductor and a second conductor on a substrate, and a plurality of electrodes coupled to the volume of phase change material and the first conductor. A method including introducing, over a first conductor on a substrate, a plurality of electrodes coupled to the first conductor, introducing a phase change material over the plurality of electrodes and in electrical communication with the plurality of electrodes, and introducing a second conductor over the phase change material and coupled to the phase change material.

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Patent Owner(s)

Patent OwnerAddressTotal Patents
OVONYX MEMORY TECHNOLOGY, LLCALEXANDRIA, VA819

International Classification(s)

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Gill, Manzur Cupertino, CA 77 2612
Lowrey, Tyler A San Jose, CA 209 10817

Cited Art Landscape

Patent Info (Count) # Cites Year
 
ROUND ROCK RESEARCH, LLC (9)
5789758 Chalcogenide memory cell with a plurality of chalcogenide electrodes 357 1995
5879955 Method for fabricating an array of ultra-small pores for chalcogenide memory cells 279 1995
5998244 Memory cell incorporating a chalcogenide element and method of making same 345 1996
6002140 Method for fabricating an array of ultra-small pores for chalcogenide memory cells 44 1997
6031287 Contact structure and memory element incorporating the same 469 1997
5970336 Method of making memory cell incorporating a chalcogenide element 282 1997
5920788 Chalcogenide memory cell with a plurality of chalcogenide electrodes 494 1997
6229157 Method of forming a polysilicon diode and devices incorporating such diode 51 1999
6153890 Memory cell incorporating a chalcogenide element 264 1999
 
OVONYX MEMORY TECHNOLOGY, LLC (4)
* 5825046 Composite memory material comprising a mixture of phase-change memory material and dielectric material 369 1996
5933365 Memory element with energy control mechanism 412 1997
6087674 Memory element with memory material comprising phase-change material and dielectric material 557 1998
6339544 Method to enhance performance of thermal resistor device 413 2000
 
OVONYX, INC. (1)
5296716 Electrically erasable, directly overwritable, multibit single cell memory elements and arrays fabricated therefrom 474 1991
* Cited By Examiner

Patent Citation Ranking

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Patent Info (Count) # Cites Year
 
SILICON STORAGE TECHNOLOGY, INC. (2)
6937507 Memory device and method of operating same 245 2003
* 2005/0122,771 MEMORY DEVICE AND METHOD OF OPERATING SAME 3 2003
 
Other [Check patent profile for assignment information] (8)
* 2004/0157,417 Methods to form a memory cell with metal-rich metal chalcogenide 0 2004
* 2004/0211,957 Method and apparatus for controlling metal doping of a chalcogenide memory element 8 2004
* 2005/0018,509 Complementary bit resistance memory sensor and method of operation 0 2004
* 2005/0286,294 Resistance variable memory elements based on polarized silver-selenide network growth 7 2005
* 2006/0023,532 Method of operating a complementary bit resistance memory sensor 2 2005
* 2006/0171,224 1T-nmemory cell structure and its method of formation and operation 15 2006
* 2008/0210,921 Silver selenide film stoichiometry and morphology control in sputter deposition 1 2008
* 2009/0098,717 CO-SPUTTER DEPOSITION OF METAL-DOPED CHALCOGENIDES 2 2008
 
NANOCHIP, INC. (13)
6985377 Phase change media for high density data storage 11 2003
* 2004/0145,941 Phase change media for high density data storage 3 2003
7379412 Methods for writing and reading highly resolved domains for high density data storage 1 2004
7301887 Methods for erasing bit cells in a high density data storage device 2 2004
* 2005/0232,061 Systems for writing and reading highly resolved domains for high density data storage 6 2004
7463573 Patterned media for a high density data storage device 5 2005
7367119 Method for forming a reinforced tip for a probe storage device 3 2005
7309630 Method for forming patterned media for a high density data storage device 95 2005
* 2007/0010,054 Method for forming patterned media for a high density data storage device 6 2005
* 2007/0006,455 Methods for forming high density data storage devices with read/write probes with hollow or reinforced tips 0 2005
7336524 Atomic probes and media for high density data storage 2 2005
7391707 Devices and methods of detecting movement between media and probe tip in a probe data storage system 3 2007
7414953 Memory having a layer with electrical conductivity anisotropy 3 2007
 
U.S. BANK NATIONAL ASSOCIATION (17)
* 2003/0047,772 Agglomeration elimination for metal sputter deposition of chalcogenides 3 2002
* 2003/0198,118 Method for reading a structural phase-change memory 0 2003
* 2004/0007,718 Stoichiometry for chalcogenide glasses useful for memory devices and method of formation 0 2003
* 2004/0124,406 Method of forming non-volatile resistance variable devices, method of forming a programmable memory cell of memory circuitry, and a non-volatile resistance variable device 0 2003
* 2004/0144,968 Agglomeration elimination for metal sputter deposition of chalcogenides 1 2004
* 2004/0171,208 Method of manufacture of programmable conductor memory 3 2004
* 2004/0232,551 Electrode structure for use in an integrated circuit 3 2004
* 2005/0018,493 Programmable conductor random access memory and method for sensing same 0 2004
* 2005/0146,958 Rewrite prevention in a variable resistance memory 4 2005
* 2007/0152,204 PCRAM device with switching glass layer 2 2007
* 2007/0145,463 PCRAM device with switching glass layer 6 2007
* 2008/0310,208 PROCESS FOR ERASING CHALCOGENIDE VARIABLE RESISTANCE MEMORY BITS 24 2007
* 2007/0247,895 METHOD AND APPARATUS PROVIDING A CROSS-POINT MEMORY ARRAY USING A VARIABLE RESISTANCE MEMORY CELL AND CAPACITANCE 0 2007
* 2008/0185,574 Method of forming non-volatile resistance variable devices 12 2008
* 2008/0188,034 Assemblies displaying differential negative resistance, semiconductor constructions, and methods of forming assemblies displaying differential negative resistance 6 2008
* 2010/0171,091 Memory array for increased bit density and method of forming the same 1 2010
* 2010/0171,088 RESISTANCE VARIABLE MEMORY DEVICE WITH SPUTTERED METAL-CHALCOGENIDE REGION AND METHOD OF FABRICATION 1 2010
 
MICRON TECHNOLOGY, INC. (135)
6951805 Method of forming integrated circuitry, method of forming memory circuitry, and method of forming random access memory circuitry 10 2001
6955940 Method of forming chalcogenide comprising devices 30 2001
* 6815818 Electrode structure for use in an integrated circuit 13 2001
* 2003/0096,497 Electrode structure for use in an integrated circuit 14 2001
6873538 Programmable conductor random access memory and a method for writing thereto 18 2001
* 2003/0117,831 Programmable conductor random access memory and a method for writing thereto 14 2001
6909656 PCRAM rewrite prevention 13 2002
* 2003/0128,612 PCRAM rewrite prevention 17 2002
6791885 Programmable conductor random access memory and method for sensing same 10 2002
* 2003/0156,463 Programmable conductor random access memory and method for sensing same 8 2002
6858482 Method of manufacture of programmable switching circuits and memory cells employing a glass layer 77 2002
* 2003/0194,865 Method of manufacture of programmable conductor memory 18 2002
7015494 Assemblies displaying differential negative resistance 15 2002
* 2004/0007,749 ASSEMBLIES DISPLAYING DIFFERENTIAL NEGATIVE RESISTANCE 1 2002
7071021 PCRAM memory cell and method of making same 20 2002
7018863 Method of manufacture of a resistance variable memory cell 10 2002
* 2004/0038,480 Method of manufacture of a PCRAM memory cell 4 2002
7364644 Silver selenide film stoichiometry and morphology control in sputter deposition 3 2002
7163837 Method of forming a resistance variable memory element 7 2002
6867114 Methods to form a memory cell with metal-rich metal chalcogenide 25 2002
6856002 Graded GexSe100-x concentration in PCRAM 20 2002
* 2004/0053,461 Graded GexSe100-x concentration in PCRAM 1 2002
6949453 Agglomeration elimination for metal sputter deposition of chalcogenides 3 2002
* 6878569 Agglomeration elimination for metal sputter deposition of chalcogenides 11 2002
6813178 Chalcogenide glass constant current device, and its method of fabrication and operation 18 2003
7022579 Method for filling via with metal 2 2003
7050327 Differential negative resistance memory 20 2003
6888155 Stoichiometry for chalcogenide glasses useful for memory devices and method of formation 26 2003
7061004 Resistance variable memory elements and methods of formation 8 2003
* 2005/0017,233 Performance PCRAM cell 8 2003
6812087 Methods of forming non-volatile resistance variable devices and methods of forming silver selenide comprising structures 19 2003
6858465 Elimination of dendrite formation during metal/chalcogenide glass deposition 4 2003
6833559 Non-volatile resistance variable device 3 2003
6882578 PCRAM rewrite prevention 5 2003
6998697 Non-volatile resistance variable devices 13 2003
7528401 Agglomeration elimination for metal sputter deposition of chalcogenides 2 2004
6974965 Agglomeration elimination for metal sputter deposition of chalcogenides 4 2004
7105864 Non-volatile zero field splitting resonance memory 7 2004
* 2005/0167,689 Non-volatile zero field splitting resonance memory 2 2004
7056762 Methods to form a memory cell with metal-rich metal chalcogenide 13 2004
6953720 Methods for forming chalcogenide glass-based memory elements 16 2004
7479650 Method of manufacture of programmable conductor memory 73 2004
7098068 Method of forming a chalcogenide material containing device 6 2004
* 2005/0202,588 Method of forming a chalcogenide material containing device 0 2004
7087919 Layered resistance variable memory device and method of fabrication 17 2004
* 2004/0192,006 Layered resistance variable memory device and method of fabrication 33 2004
7002833 Complementary bit resistance memory sensor and method of operation 46 2004
7115504 Method of forming electrode structure for use in an integrated circuit 15 2004
7115992 Electrode structure for use in an integrated circuit 5 2004
7332401 Method of fabricating an electrode structure for use in an integrated circuit 26 2004
7459764 Method of manufacture of a PCRAM memory cell 7 2004
7190048 Resistance variable memory device and method of fabrication 13 2004
* 2006/0012,008 Resistance variable memory device and method of fabrication 1 2004
7354793 Method of forming a PCRAM device incorporating a resistance-variable chalocogenide element 10 2004
* 2006/0035,403 PCRAM device with switching glass layer 2 2004
6954385 Method and apparatus for sensing resistive memory state 17 2004
7030410 Resistance variable device 14 2004
7209378 Columnar 1T-N memory cell structure 16 2004
7151688 Sensing of resistance variable memory devices 10 2004
* 2006/0044,906 Sensing of resistance variable memory devices 0 2004
7094700 Plasma etching methods and methods of forming memory devices comprising a chalcogenide comprising layer received operably proximate conductive electrodes 7 2004
* 2005/0054,207 Plasma etching methods and methods of forming memory devices comprising a chalcogenide comprising layer received operably proximate conductive electrodes 0 2004
7329558 Differential negative resistance memory 10 2004
7049009 Silver selenide film stoichiometry and morphology control in sputter deposition 3 2004
7374174 Small electrode for resistance variable devices 10 2004
* 2006/0131,556 Small electrode for resistance variable devices 4 2004
* 2006/0131,555 Resistance variable devices with controllable channels 116 2004
7317200 SnSe-based limited reprogrammable cell 7 2005
7224632 Rewrite prevention in a variable resistance memory 4 2005
7348205 Method of forming resistance variable devices 6 2005
* 2005/0157,573 Method of forming non-volatile resistance variable devices 0 2005
7709289 Memory elements having patterned electrodes and method of forming the same 1 2005
7427770 Memory array for increased bit density 4 2005
7269044 Method and apparatus for accessing a memory array 1 2005
7269079 Power circuits for reducing a number of power supply voltage taps required for sensing a resistive memory 1 2005
7326950 Memory device with switching glass layer 11 2005
7233520 Process for erasing chalcogenide variable resistance memory bits 8 2005
* 2007/0008,768 Process for erasing chalcogenide variable resistance memory bits 2 2005
7274034 Resistance variable memory device with sputtered metal-chalcogenide region and method of fabrication 8 2005
7317567 Method and apparatus for providing color changing thin film material 8 2005
7518212 concentration in PCRAM 14 2005
7579615 Access transistor for memory device 6 2005
* 2007/0034,921 Access transistor for memory device 10 2005
7304368 Chalcogenide-based electrokinetic memory element and method of forming the same 8 2005
7251154 Method and apparatus providing a cross-point memory array using a variable resistance memory cell and capacitance 16 2005
* 2007/0035,990 Method and apparatus providing a cross-point memory array using a variable resistance memory cell and capacitance 15 2005
7277313 Resistance variable memory element with threshold device and method of forming the same 7 2005
* 2007/0047,297 Resistance variable memory element with threshold device and method of forming the same 0 2005
7242603 Method of operating a complementary bit resistance memory sensor 9 2005
7294527 Method of forming a memory cell 9 2005
7550818 Method of manufacture of a PCRAM memory cell 6 2006
7396699 Method of forming non-volatile resistance variable devices and method of forming a programmable memory cell of memory circuitry 7 2006
* 2006/0270,099 Method of forming non-volatile resistance variable devices and method of forming a programmable memory cell of memory circuitry 0 2006
7723713 Layered resistance variable memory device and method of fabrication 12 2006
* 2007/0007,506 Layered resistance variable memory device and method of fabrication 5 2006
7190608 Sensing of resistance variable memory devices 8 2006
7459336 Method of forming a chalcogenide material containing device 0 2006
* 2006/0243,973 Thin film diode integrated with chalcogenide memory cell 4 2006
7348209 Resistance variable memory device and method of fabrication 9 2006
7700422 Methods of forming memory arrays for increased bit density 0 2006
7910397 Small electrode for resistance variable devices 0 2006
7663133 Memory elements having patterned electrodes and method of forming the same 0 2006
* 2007/0059,882 Memory elements having patterned electrodes and method of forming the same 7 2006
7289349 Resistance variable memory element with threshold device and method of forming the same 9 2006
7366045 Power circuits for reducing a number of power supply voltage taps required for sensing a resistive memory 0 2006
* 2007/0104,010 Power circuits for reducing a number of power supply voltage taps required for sensing a resistive memory 5 2006
7282783 Resistance variable memory device and method of fabrication 11 2007
7709885 Access transistor for memory device 16 2007
7994491 PCRAM device with switching glass layer 4 2007
7759665 PCRAM device with switching glass layer 8 2007
7643333 Process for erasing chalcogenide variable resistance memory bits 1 2007
7668000 Method and apparatus providing a cross-point memory array using a variable resistance memory cell and capacitance 2 2007
7433227 Resistance variable memory device with sputtered metal-chalcogenide region and method of fabrication 9 2007
8101936 SnSe-based limited reprogrammable cell 0 2007
7745808 Differential negative resistance memory 9 2007
7749853 Method of forming a variable resistance memory device comprising tin selenide 8 2008
7863597 Resistance variable memory devices with passivating material 2 2008
7879646 Assemblies displaying differential negative resistance, semiconductor constructions, and methods of forming assemblies displaying differential negative resistance 4 2008
7785976 Method of forming a memory device incorporating a resistance-variable chalcogenide element 10 2008
7869249 Complementary bit PCRAM sense amplifier and method of operation 2 2008
7551509 Power circuits for reducing a number of power supply voltage taps required for sensing a resistive memory 1 2008
7701760 Resistance variable memory device with sputtered metal-chalcogenide region and method of fabrication 9 2008
7791058 Enhanced memory density resistance variable memory cells, arrays, devices and systems including the same, and methods of fabrication 10 2009
7978500 Method and apparatus providing a cross-point memory array using a variable resistance memory cell and capacitance 0 2010
7968927 Memory array for increased bit density and method of forming the same 0 2010
7940556 Resistance variable memory device with sputtered metal-chalcogenide region and method of fabrication 2 2010
8652903 Access transistor for memory device 0 2010
8263958 Layered resistance variable memory device and method of fabrication 3 2010
8334186 Method of forming a memory device incorporating a resistance variable chalcogenide element 1 2010
8030636 Enhanced memory density resistance variable memory cells, arrays, devices and systems including the same, and methods of fabrication 2 2010
8189366 Method and apparatus providing a cross-point memory array using a variable resistance memory cell and capacitance 1 2011
8487288 Memory device incorporating a resistance variable chalcogenide element 0 2011
8611136 Method and apparatus providing a cross-point memory array using a variable resistance memory cell and capacitance 0 2012
8895401 Method of forming a memory device incorporating a resistance variable chalcogenide element 1 2012
9552986 Forming a memory device using sputtering to deposit silver-selenide film 0 2014
 
GLOBALFOUNDRIES INC. (4)
7038231 Non-planarized, self-aligned, non-volatile phase-change memory array and method of formation 6 2004
* 2005/0242,338 Non-planarized, self-aligned, non-volatile phase-change memory array and method of formation 2 2004
7682866 Non-planarized, self-aligned, non-volatile phase-change memory array and method of formation 1 2006
* 2006/0145,134 Non-planarized, self-aligned, non-volatile phase-change memory array and method of formation 2 2006
 
BOISE STATE UNIVERSITY (2)
8467236 Continuously variable resistor 1 2010
* 2011/0037,558 CONTINUOUSLY VARIABLE RESISTOR 1 2010
 
SAMSUNG ELECTRONICS CO., LTD. (6)
7515461 Current compliant sensing architecture for multilevel phase change memory 59 2007
* 2008/0165,570 Current Compliant Sensing Architecture for Multilevel Phase Change Memory 97 2007
8138028 Method for manufacturing a phase change memory device with pillar bottom electrode 7 2007
* 2008/0191,187 METHOD FOR MANUFACTURING A PHASE CHANGE MEMORY DEVICE WITH PILLAR BOTTOM ELECTRODE 121 2007
8030634 Memory array with diode driver and method for fabricating the same 2 2008
7825398 Memory cell having improved mechanical stability 3 2008
 
SUMITOMO ELECTRIC INDUSTRIES, LTD. (1)
* 2002/0116,955 Method of forming soot preform 1 2002
 
OVONYX MEMORY TECHNOLOGY, LLC (62)
* 2002/0168,852 PCRAM memory cell and method of making same 26 2001
* 7319057 Phase change material memory device 6 2001
* 2003/0082,908 Phase change material memory device 2 2001
6891749 Resistance variable ‘on ’ memory 22 2002
6809362 Multiple data state memory cell 19 2002
* 2003/0156,468 Resistance variable 'on' memory 3 2002
6937528 Variable resistance memory and method for sensing same 23 2002
* 2003/0169,625 Programmable conductor random access memory and method for sensing same 61 2002
6849868 Methods and apparatus for resistance variable material cells 29 2002
* 2003/0173,558 Methods and apparatus for resistance variable material cells 2 2002
6864500 Programmable conductor memory cell structure 222 2002
6855975 Thin film diode integrated with chalcogenide memory cell 42 2002
* 2003/0193,059 Programmable conductor memory cell structure and method therefor 1 2002
* 2003/0193,053 Thin film diode integrated with chalcogenide memory cell 12 2002
7010644 Software refreshed memory device and method 10 2002
6867996 Single-polarity programmable resistance-variable memory element 49 2002
6864521 Method to control silver concentration in a resistance variable memory element 19 2002
* 2004/0043,245 Method to control silver concentration in a resistance variable memory element 1 2002
6894304 Apparatus and method for dual cell common electrode PCRAM memory device 131 2003
* 6869841 Carbon-containing interfacial layer for phase-change memory 11 2003
6930909 Memory device and methods of controlling resistance variation and resistance profile drift 45 2003
* 2004/0264,234 PCRAM cell operation method to control on/off resistance variation 16 2003
6961277 Method of refreshing a PCRAM memory device 26 2003
7399655 Damascene conductive line for contacting an underlying memory element 3 2003
* 2005/0029,627 Damascene conductive line for contacting an underlying memory element 4 2003
7022555 Methods of forming a semiconductor memory device 1 2004
6949402 Method of forming a non-volatile resistance variable device 1 2004
7087454 Fabrication of single polarity programmable resistance structure 26 2004
6908808 Method of forming and storing data in a multiple state memory cell 4 2004
* 2004/0223,357 Multiple data state memory cell 0 2004
7365411 Resistance variable memory with temperature tolerant materials 75 2004
7223627 Memory element and its method of formation 7 2004
* 2005/0148,150 Memory element and its method of formation 2 2004
7112484 Thin film diode integrated with chalcogenide memory cell 7 2004
7202520 Multiple data state memory cell 6 2005
* 2005/0157,567 Multiple data state memory cell 0 2005
7385868 Method of refreshing a PCRAM memory device 9 2005
7332735 Phase change memory cell and method of formation 32 2005
7199444 Memory device, programmable resistance memory cell and memory array 3 2005
7307908 Software refreshed memory device and method 5 2005
7235419 Method of making a memory cell 5 2005
7547905 Programmable conductor memory cell structure and method therefor 3 2006
7393798 Resistance variable memory with temperature tolerant materials 15 2006
7366003 Method of operating a complementary bit resistance memory sensor and method of operation 1 2006
* 2006/0245,234 Method of operating a complementary bit resistance memory sensor and method of operation 1 2006
7692177 Resistance variable memory element and its method of formation 7 2006
7498231 Multiple data state memory cell 0 2007
* 2007/0128,792 Multiple data state memory cell 3 2007
7687793 Resistance variable memory cells 47 2007
* 2007/0235,712 RESISTANCE VARIABLE MEMORY CELLS 9 2007
7564731 Software refreshed memory device and method 4 2007
7663137 Phase change memory cell and method of formation 17 2007
* 2008/0142,773 PHASE CHANGE MEMORY CELL AND METHOD OF FORMATION 10 2007
7586777 Resistance variable memory with temperature tolerant materials 10 2008
7682992 Resistance variable memory with temperature tolerant materials 7 2008
* 7728352 Damascene conductive line for contacting an underlying memory element 1 2008
* 2008/0246,161 Damascene conductive line for contacting an underlying memory element 2 2008
7768861 Software refreshed memory device and method 0 2009
7924603 Resistance variable memory with temperature tolerant materials 2 2010
7944768 Software refreshed memory device and method 0 2010
* 8440535 Forming a phase change memory with an ovonic threshold switch 0 2012
* 2012/0220,099 Forming a Phase Change Memory With an Ovonic Threshold Switch 3 2012
 
ROUND ROCK RESEARCH, LLC (21)
6867064 Method to alter chalcogenide glass for improved switching characteristics 13 2002
* 2003/0155,606 Method to alter chalcogenide glass for improved switching characteristics 9 2002
6890790 Co-sputter deposition of metal-doped chalcogenides 12 2002
6903361 Non-volatile memory structure 34 2003
* 2005/0056,910 NON-VOLATILE MEMORY STRUCTURE 0 2003
7153721 Resistance variable memory elements based on polarized silver-selenide network growth 11 2004
* 2005/0162,907 Resistance variable memory elements based on polarized silver-selenide network growth 1 2004
7583551 Power management control and controlling memory refresh operations 6 2004
* 2005/0201,174 Power management control and controlling memory refresh operations 18 2004
* 2004/0223,390 Resistance variable memory element having chalcogenide glass for improved switching characteristics 7 2004
7202104 Co-sputter deposition of metal-doped chalcogenides 1 2004
* 2004/0235,235 Co-sputter deposition of metal-doped chalcogenides 0 2004
6946347 Non-volatile memory structure 11 2004
* 2005/0059,187 Non-volatile memory structure 0 2004
7276722 Non-volatile memory structure 7 2005
7446393 Co-sputter deposition of metal-doped chalcogenides 1 2007
7491963 Non-volatile memory structure 0 2007
7964436 Co-sputter deposition of metal-doped chalcogenides 0 2008
8619485 Power management control and controlling memory refresh operations 2 2009
* 2009/0147,608 POWER MANAGEMENT CONTROL AND CONTROLLING MEMORY REFRESH OPERATIONS 4 2009
9142263 Power management control and controlling memory refresh operations 0 2013
 
MACRONIX INTERNATIONAL CO., LTD. (300)
7385235 Spacer chalcogenide memory device 95 2004
7033856 Spacer chalcogenide memory method 161 2004
* 2005/0093,022 Spacer chalcogenide memory device 22 2004
* 2005/0062,074 Spacer chalcogenide memory method 3 2004
7220983 Self-aligned small contact phase-change memory method and device 201 2004
7514288 Manufacturing methods for thin film fuse phase change ram 9 2005
7321130 Thin film fuse phase change RAM and manufacturing method 117 2005
7238994 Thin film plate phase change ram circuit and manufacturing method 119 2005
* 2006/0284,279 Thin film fuse phase change RAM and manufacturing method 34 2005
* 2006/0286,709 Manufacturing methods for thin film fuse phase change ram 219 2005
* 2006/0284,157 Thin film plate phase change RAM circuit and manufacturing method 32 2005
7608503 Side wall active pin memory and manufacturing method 20 2005
* 2006/0108,667 Method for manufacturing a small pin on integrated circuits or other devices 180 2005
* 2006/0110,878 Side wall active pin memory and manufacturing method 242 2005
* 2007/0111,429 Method of manufacturing a pipe shaped phase change memory 174 2006
7507986 Thermal isolation for an active-sidewall phase change memory cell 53 2006
7432206 Self-aligned manufacturing method, and manufacturing method for thin film fuse phase change ram 2 2006
7394088 Thermally contained/insulated phase change memory device and method (combined) 122 2006
* 2007/0173,063 Self-aligned manufacturing method, and manufacturing method for thin film fuse phase change ram 20 2006
* 2007/0108,430 Thermally contained/insulated phase change memory device and method (combined) 29 2006
7956358 I-shaped phase change memory cell with thermal isolation 3 2006
7635855 I-shaped phase change memory cell 9 2006
* 2008/0043,520 I-shaped phase change memory cell with thermal isolation 108 2006
7825396 Self-align planerized bottom electrode phase change memory and manufacturing method 0 2006
* 2007/0158,645 Self-align planerized bottom electrode phase change memory and manufacturing method 162 2006
7471555 Thermally insulated phase change memory device 5 2006
* 2007/0109,836 Thermally insulated phase change memory device and manufacturing method 22 2006
7599217 Memory cell device and manufacturing method 3 2006
8062833 Chalcogenide layer etching method 1 2006
* 2007/0154,847 Chalcogenide layer etching method 165 2006
7910907 Manufacturing method for pipe-shaped electrode phase change memory 3 2006
7397060 Pipe shaped phase change memory 116 2006
* 2007/0108,429 Pipe shaped phase change memory 21 2006
7554144 Memory device and manufacturing method 6 2006
* 2007/0241,371 Memory device and manufacturing method 3 2006
7928421 Phase change memory cell with vacuum spacer 9 2006
7829876 Vacuum cell thermal isolation for a phase change memory device 5 2006
7479649 Vacuum jacketed electrode for phase change memory element 67 2006
7449710 Vacuum jacket for phase change memory element 90 2006
* 2007/0158,862 Vacuum jacketed electrode for phase change memory element 162 2006
* 2007/0131,980 Vacuum jacket for phase change memory element 15 2006
* 2007/0126,040 Vacuum cell thermal isolation for a phase change memory device 167 2006
7521364 Surface topology improvement method for plug surface areas 0 2006
7456421 Vertical side wall active pin structures in a phase change memory and manufacturing methods 10 2006
* 2007/0176,261 Vertical Side Wall Active Pin Structures in a Phase Change Memory and Manufacturing Methods 60 2006
8129706 Structures and methods of a bistable resistive random access memory 10 2006
* 2007/0257,300 Structures and Methods of a Bistable Resistive Random Access Memory 143 2006
7608848 Bridge resistance random access memory device with a singular contact structure 89 2006
* 2007/0262,388 Bridge Resistance Random Access Memory Device and Method With A Singular Contact Structure 123 2006
7605079 Manufacturing method for phase change RAM with electrode layer process 11 2006
7514367 Method for manufacturing a narrow structure on an integrated circuit 1 2006
* 2007/0155,172 Manufacturing Method for Phase Change RAM with Electrode Layer Process 177 2006
* 2006/0286,743 Method for Manufacturing a Narrow Structure on an Integrated Circuit 164 2006
7423300 Single-mask phase change memory element 104 2006
7820997 Resistor random access memory cell with reduced active area and reduced contact areas 1 2006
7732800 Resistor random access memory cell with L-shaped electrode 3 2006
* 2007/0278,529 RESISTOR RANDOM ACCESS MEMORY CELL WITH L-SHAPED ELECTRODE 24 2006
* 2007/0281,420 RESISTOR RANDOM ACCESS MEMORY CELL WITH REDUCED ACTIVE AREA AND REDUCED CONTACT AREAS 17 2006
7459717 Phase change memory cell and manufacturing method 18 2006
7414258 Spacer electrode small pin phase change memory RAM and manufacturing method 2 2006
* 2007/0121,363 Phase Change Memory Cell and Manufacturing Method 37 2006
8237140 Self-aligned, embedded phase change RAM 6 2006
* 2006/0284,158 SELF-ALIGNED, EMBEDDED PHASE CHANGE RAM AND MANUFACTURING METHOD 178 2006
7642539 Thin film fuse phase change cell with thermal isolation pad and manufacturing method 3 2006
* 2007/0131,922 Thin Film Fuse Phase Change Cell with Thermal Isolation Pad and Manufacturing Method 162 2006
7560337 Programmable resistive RAM and manufacturing method 32 2006
* 2007/0173,019 Programmable Resistive Ram and Manufacturing Method 212 2006
7696506 Memory cell with memory material insulation and manufacturing method 13 2006
7785920 Method for making a pillar-type phase change memory element 3 2006
* 2008/0014,676 Method for Making a Pillar-Type Phase Change Memory Element 115 2006
7741636 Programmable resistive RAM and manufacturing method 4 2006
* 2007/0161,186 Programmable Resistive RAM and Manufacturing Method 174 2006
7450411 Phase change memory device and manufacturing method 4 2006
7595218 Programmable resistive RAM and manufacturing method 2 2006
* 2007/0158,690 Programmable Resistive RAM and Manufacturing Method 169 2006
* 2007/0158,632 Method for Fabricating a Pillar-Shaped Phase Change Memory Element 166 2006
7531825 Method for forming self-aligned thermal isolation cell for a variable resistance memory array 2 2006
7442603 Self-aligned structure and method for confining a melting point in a resistor random access memory 11 2006
* 2008/0121,861 Self-Aligned Structure and Method for Confining a Melting Point in a Resistor Random Access Memory 4 2006
7598512 Thin film fuse phase change cell with thermal isolation layer and manufacturing method 2 2006
* 2006/0284,214 THIN FILM FUSE PHASE CHANGE CELL WITH THERMAL ISOLATION LAYER AND MANUFACTURING METHOD 170 2006
7772581 Memory device having wide area phase change element and small electrode contact area 75 2006
* 2008/0061,341 Memory Device Having Wide Area Phase Change Element and Small Electrode Contact Area 26 2006
7504653 Memory cell device with circumferentially-extending memory element 34 2006
7510929 Method for making memory cell device 2 2006
* 2008/0096,375 Method for Making Memory Cell Device 5 2006
7863655 Phase change memory cells with dual access devices 1 2006
7527985 Method for manufacturing a resistor random access memory with reduced active area and reduced contact areas 4 2006
7388771 Methods of operating a bistable resistance random access memory with multiple memory layers and multilevel memory states 6 2006
* 2008/0106,923 Phase Change Memory Cells with Dual Access Devices 26 2006
* 2008/0094,885 Bistable Resistance Random Access Memory Structures with Multiple Memory Layers and Multilevel Memory States 6 2006
* 2008/0096,341 Method for Manufacturing a Resistor Random Access Memory with Reduced Active Area and Reduced Contact Areas 4 2006
8067762 Resistance random access memory structure for enhanced retention 5 2006
* 2008/0116,440 Resistance Random Access Memory Structure for Enhanced Retention 8 2006
7816661 Air cell thermal isolation for a memory array formed of a programmable resistive material 5 2006
* 2008/0266,940 Air Cell Thermal Isolation for a Memory Array Formed of a Programmable Resistive Material 12 2006
7682868 Method for making a keyhole opening during the manufacture of a memory cell 0 2006
7476587 Method for making a self-converged memory material element for memory cell 24 2006
* 2008/0138,931 Method for Making a Self-Converged Void and Bottom Electrode for Memoery Cell 51 2006
* 2008/0138,929 Method for Making a Self-Converged Memory Material Element for Memory Cell 69 2006
7697316 Multi-level cell resistance random access memory with metal oxides 83 2006
* 2008/0135,824 Method and Structure of a Multi-Level Cell Resistance Random Access Memory with Metal Oxides 14 2006
7903447 Method, apparatus and computer program product for read before programming process on programmable resistive memory cell 2 2006
* 2008/0144,353 Method, Apparatus and Computer Program Product for Read Before Programming Process on Programmable Resistive Memory Cell 3 2006
8344347 Multi-layer electrode structure 0 2006
7688619 Phase change memory cell and manufacturing method 95 2006
7718989 Resistor random access memory cell device 11 2006
* 2008/0157,053 Resistor Random Access Memory Cell Device 42 2006
7786460 Phase change memory device and manufacturing method 78 2007
7440315 Method, apparatus and computer program product for stepped reset programming process on programmable resistive memory cell 21 2007
7433226 Method, apparatus and computer program product for read before programming process on multiple programmable resistive memory cell 8 2007
* 2007/0109,843 Phase Change Memory Device and Manufacturing Method 162 2007
7483292 Memory cell with separate read and program paths 6 2007
* 2008/0186,761 Memory Cell with Separate Read and Program Paths 2 2007
8008643 Phase change memory cell with heater and method for fabricating the same 0 2007
7619237 Programmable resistive memory cell with self-forming gap 4 2007
7534647 Damascene phase change RAM and manufacturing method 5 2007
* 2008/0197,334 Phase Change Memory Cell with Heater and Method for Fabricating the Same 91 2007
7956344 Memory cell with memory element contacting ring-shaped upper end of bottom electrode 5 2007
* 2008/0203,375 Memory Cell with Memory Element Contacting Ring-Shaped Upper End of Bottom Electrode 2 2007
7786461 Memory structure with reduced-size memory element between memory material portions 14 2007
8610098 Phase change memory bridge cell with diode isolation device 0 2007
7755076 self align side wall active phase change memory 47 2007
7569844 Memory cell sidewall contacting side electrode 39 2007
* 2008/0258,126 Memory Cell Sidewall Contacting Side Electrode 42 2007
7514334 Thin film plate phase change RAM circuit and manufacturing method 62 2007
7463512 Memory element with reduced-current phase change element 21 2007
* 2008/0192,534 MEMORY ELEMENT WITH REDUCED-CURRENT PHASE CHANGE ELEMENT 21 2007
7701759 Memory cell device and programming methods 14 2007
* 2008/0186,755 MEMORY CELL DEVICE AND PROGRAMMING METHODS 90 2007
8513637 4F2 self align fin bottom electrodes FET drive phase change memory 1 2007
7483316 Method and apparatus for refreshing programmable resistive memory 1 2007
* 2008/0266,933 Method and Apparatus for Refreshing Programmable Resistive Memory 8 2007
7884342 Phase change memory bridge cell 0 2007
* 2009/0032,796 PHASE CHANGE MEMORY BRIDGE CELL 6 2007
7729161 Phase change memory with dual word lines and source lines and method of operating same 7 2007
* 2009/0034,323 PHASE CHANGE MEMORY WITH DUAL WORD LINES AND SOURCE LINES AND METHOD OF OPERATING SAME 10 2007
9018615 Resistor random access memory structure having a defined small area of electrical contact 0 2007
7696503 Multi-level memory cell having phase change element and asymmetrical thermal boundary 22 2007
8178386 Phase change memory cell array with self-converged bottom electrode and method for manufacturing 4 2007
7642125 Phase change memory cell in via array with self-aligned, self-converged bottom electrode and method for manufacturing 22 2007
* 2009/0072,216 PHASE CHANGE MEMORY CELL ARRAY WITH SELF-CONVERGED BOTTOM ELECTRODE AND METHOD FOR MANUFACTURING 14 2007
* 2009/0072,215 PHASE CHANGE MEMORY CELL IN VIA ARRAY WITH SELF-ALIGNED, SELF-CONVERGED BOTTOM ELECTRODE AND METHOD FOR MANUFACTURING 45 2007
7663135 Memory cell having a side electrode contact 5 2007
7551473 Programmable resistive memory with diode structure 21 2007
7535756 Method to tighten set distribution for PCRAM 13 2007
7919766 Method for making self aligning pillar memory cell device 17 2007
7804083 Phase change memory cell including a thermal protect bottom electrode and manufacturing methods 7 2007
* 2009/0122,588 PHASE CHANGE MEMORY CELL INCLUDING A THERMAL PROTECT BOTTOM ELECTRODE AND MANUFACTURING METHODS 7 2007
7646631 Phase change memory cell having interface structures with essentially equal thermal impedances and manufacturing methods 17 2007
* 2009/0147,564 PHASE CHANGE MEMORY CELL HAVING INTERFACE STRUCTURES WITH ESSENTIALLY EQUAL THERMAL IMPEDANCES AND MANUFACTURING METHODS 19 2007
7579613 Thin film fuse phase change RAM and manufacturing method 21 2007
7639527 Phase change memory dynamic resistance test and manufacturing methods 4 2008
7884343 Phase change memory cell with filled sidewall memory element and method for fabricating the same 10 2008
7879643 Memory cell with memory element contacting an inverted T-shaped bottom electrode 3 2008
* 2008/0191,186 PHASE CHANGE MEMORY CELL WITH FILLED SIDEWALL MEMORY ELEMENT AND METHOD FOR FABRICATING THE SAME 7 2008
7879645 Fill-in etching free pore device 13 2008
* 2009/0189,138 FILL-IN ETCHING FREE PORE DEVICE 6 2008
7619311 Memory cell device with coplanar electrode surface and method 14 2008
* 2008/0185,730 MEMORY CELL DEVICE WITH COPLANAR ELECTRODE SURFACE AND METHOD 9 2008
8158965 Heating center PCRAM structure and methods for making 2 2008
7932101 Thermally contained/insulated phase change memory device and method 6 2008
* 2008/0166,875 THERMALLY CONTAINED/INSULATED PHASE CHANGE MEMORY DEVICE AND METHOD (COMBINED) 89 2008
8084842 Thermally stabilized electrode structure 4 2008
* 2009/0242,880 THERMALLY STABILIZED ELECTRODE STRUCTURE 2 2008
7791057 Memory cell having a buried phase change region and method for fabricating the same 13 2008
* 2009/0261,313 MEMORY CELL HAVING A BURIED PHASE CHANGE REGION AND METHOD FOR FABRICATING THE SAME 16 2008
7701750 Phase change device having two or more substantial amorphous regions in high resistance state 14 2008
7586778 Methods of operating a bistable resistance random access memory with multiple memory layers and multilevel memory states 78 2008
8415651 Phase change memory cell having top and bottom sidewall contacts 2 2008
* 2009/0309,087 PHASE CHANGE MEMORY CELL HAVING TOP AND BOTTOM SIDEWALL CONTACTS 16 2008
7642123 Thermally insulated phase change memory manufacturing method 4 2008
* 2008/0268,565 THERMALLY INSULATED PHASE CHANGE MEMORY MANUFACTURING METHOD 4 2008
7867815 Spacer electrode small pin phase change RAM and manufacturing method 2 2008
7777215 Resistive memory structure with buffer layer 42 2008
7932506 Fully self-aligned pore-type memory cell having diode access device 4 2008
* 2010/0019,215 MUSHROOM TYPE MEMORY CELL HAVING SELF-ALIGNED BOTTOM ELECTRODE AND DIODE ACCESS DEVICE 17 2008
7903457 Multiple phase change materials in an integrated circuit for system on a chip application 8 2008
* 2010/0046,285 MULTIPLE PHASE CHANGE MATERIALS IN AN INTEGRATED CIRCUIT FOR SYSTEM ON A CHIP APPLICATION 14 2008
7842536 Vacuum jacket for phase change memory element 1 2008
* 2009/0023,242 VACUUM JACKET FOR PHASE CHANGE MEMORY ELEMENT 61 2008
7719913 Sensing circuit for PCRAM applications 3 2008
8243494 Self-aligned structure and method for confining a melting point in a resistor random access memory 0 2008
8324605 Dielectric mesh isolated phase change structure for phase change memory 4 2008
7897954 Dielectric-sandwiched pillar memory device 0 2008
7932129 Vertical side wall active pin structures in a phase change memory and manufacturing methods 2 2008
* 2009/0042,335 VERTICAL SIDE WALL ACTIVE PIN STRUCTURES IN A PHASE CHANGE MEMORY AND MANUFACTURING METHODS 61 2008
8036014 Phase change memory program method without over-reset 12 2008
7902538 Phase change memory cell with first and second transition temperature portions 2 2008
* 2010/0110,778 PHASE CHANGE MEMORY PROGRAM METHOD WITHOUT OVER-RESET 1 2008
8907316 Memory cell access device having a pn-junction with polycrystalline and single crystal semiconductor regions 1 2008
8664689 Memory cell access device having a pn-junction with polycrystalline plug and single-crystal semiconductor regions 0 2008
* 2010/0117,048 MEMORY CELL ACCESS DEVICE HAVING A PN-JUNCTION WITH POLYCRYSTALLINE AND SINGLE-CRYSTAL SEMICONDUCTOR REGIONS 5 2008
7638359 Method for making a self-converged void and bottom electrode for memory cell 5 2008
* 2009/0104,771 METHOD FOR MAKING A SELF-CONVERGED VOID AND BOTTOM ELECTRODE FOR MEMORY CELL 10 2008
7749854 Method for making a self-converged memory material element for memory cell 0 2008
7687307 Vacuum jacketed electrode for phase change memory element 1 2008
* 2009/0098,716 METHOD FOR MAKING A SELF-CONVERGED MEMORY MATERIAL ELEMENT FOR MEMORY CELL 8 2008
* 2009/0098,678 VACUUM JACKETED ELECTRODE FOR PHASE CHANGE MEMORY ELEMENT 44 2008
7869270 Set algorithm for phase change memory cell 5 2008
8089137 Integrated circuit memory with single crystal silicon on silicide driver and manufacturing method 69 2009
* 2010/0171,086 INTEGRATED CIRCUIT MEMORY WITH SINGLE CRYSTAL SILICON ON SILICIDE DRIVER AND MANUFACTURING METHOD 98 2009
7923285 Method for forming self-aligned thermal isolation cell for a variable resistance memory array 9 2009
* 2009/0148,981 METHOD FOR FORMING SELF-ALIGNED THERMAL ISOLATION CELL FOR A VARIABLE RESISTANCE MEMORY ARRAY 21 2009
8107283 Method for setting PCRAM devices 3 2009
8030635 Polysilicon plug bipolar transistor for phase change memory 2 2009
8933536 Polysilicon pillar bipolar transistor with self-aligned memory element 2 2009
7910906 Memory cell device with circumferentially-extending memory element 1 2009
8084760 Ring-shaped electrode and manufacturing method for same 6 2009
8173987 Integrated circuit 3D phase change memory array and manufacturing method 24 2009
8077505 Bipolar switching of phase change device 2 2009
8097871 Low operational current phase change memory structures 1 2009
8134857 Methods for high speed reading operation of phase change memory and device employing same 1 2009
7933139 One-transistor, one-resistor, one-capacitor phase change memory 27 2009
7972893 Memory device manufacturing method 0 2009
8350316 Phase change memory cells having vertical channel access transistor and memory plane 2 2009
7968876 Phase change memory cell having vertical channel access transistor 10 2009
8158963 Programmable resistive RAM and manufacturing method 0 2009
* 2009/0236,743 Programmable Resistive RAM and Manufacturing Method 0 2009
8809829 Phase change memory having stabilized microstructure and manufacturing method 1 2009
8406033 Memory device and method for sensing and fixing margin cells 6 2009
8064247 Rewritable memory device based on segregation/re-absorption 2 2009
8110822 Thermal protect PCRAM structure and methods for making 17 2009
7894254 Refresh circuitry for phase change memory 5 2009
7924600 Methods of operating a bistable resistance random access memory with multiple memory layers and multilevel memory states 4 2009
8198619 Phase change memory cell structure 2 2009
8064248 2T2R-1T1R mix mode phase change memory array 4 2009
8110429 Bridge resistance random access memory device and method with a singular contact structure 0 2009
7879692 Programmable resistive memory cell with self-forming gap 1 2009
* 2010/0029,062 PROGRAMMABLE RESISTIVE MEMORY CELL WITH SELF-FORMING GAP 7 2009
7972895 Memory cell device with coplanar electrode surface and method 2 2009
* 2010/0029,042 MEMORY CELL DEVICE WITH COPLANAR ELECTRODE SURFACE AND METHOD 2 2009
7993962 I-shaped phase change memory cell 3 2009
8143612 Phase change memory cell in via array with self-aligned, self-converged bottom electrode and method for manufacturing 2 2009
* 2010/0065,808 PHASE CHANGE MEMORY CELL IN VIA ARRAY WITH SELF-ALIGNED, SELF-CONVERGED BOTTOM ELECTRODE AND METHOD FOR MANUFACTURING 5 2009
8062923 Thin film fuse phase change cell with thermal isolation pad and manufacturing method 2 2009
7893418 Phase change memory cell having interface structures with essentially equal thermal impedances and manufacturing methods 1 2009
* 2010/0072,447 PHASE CHANGE MEMORY CELL HAVING INTERFACE STRUCTURES WITH ESSENTIALLY EQUAL THERMAL IMPEDANCES AND MANUFACTURING METHODS 15 2009
7964863 Memory cell having a side electrode contact 1 2009
7929340 Phase change memory cell and manufacturing method 6 2010
7964468 Multi-level memory cell having phase change element and asymmetrical thermal boundary 3 2010
* 2010/0151,652 MULTI-LEVEL MEMORY CELL HAVING PHASE CHANGE ELEMENT AND ASYMMETRICAL THERMAL BOUNDARY 28 2010
8238149 Methods and apparatus for reducing defect bits in phase change memory 5 2010
8111541 Method of a multi-level cell resistance random access memory with metal oxides 4 2010
7920415 Memory cell device and programming methods 0 2010
* 2010/0216,279 METHOD OF A MULTI-LEVEL CELL RESISTANCE RANDOM ACCESS MEMORY WITH METAL OXIDES 5 2010
* 2010/0157,665 MEMORY CELL DEVICE AND PROGRAMMING METHODS 9 2010
8059449 Phase change device having two or more substantial amorphous regions in high resistance state 1 2010
8363463 Phase change memory having one or more non-constant doping profiles 2 2010
8178387 Methods for reducing recrystallization time for a phase change material 4 2010
8178405 Resistor random access memory cell device 3 2010
7978509 Phase change memory with dual word lines and source lines and method of operating same 3 2010
8080440 Resistor random access memory cell with L-shaped electrode 5 2010
* 2010/0207,095 RESISTOR RANDOM ACCESS MEMORY CELL WITH L-SHAPED ELECTRODE 15 2010
8178388 Programmable resistive RAM and manufacturing method 3 2010
8729521 Self aligned fin-type programmable memory cell 4 2010
8237148 self align side wall active phase change memory 0 2010
* 2010/0237,316 4F2 SELF ALIGN SIDE WALL ACTIVE PHASE CHANGE MEMORY 5 2010
8310864 Self-aligned bit line under word line memory array 5 2010
7964437 Memory device having wide area phase change element and small electrode contact area 4 2010
7943920 Resistive memory structure with buffer layer 5 2010
* 2010/0276,658 Resistive Memory Structure with Buffer Layer 4 2010
8008114 Phase change memory device and manufacturing method 1 2010
* 2010/0291,747 Phase Change Memory Device and Manufacturing Method 29 2010
7875493 Memory structure with reduced-size memory element between memory material portions 6 2010
8039392 Resistor random access memory cell with reduced active area and reduced contact areas 2 2010
8395935 Cross-point self-aligned reduced cell size phase change memory 9 2010
8143089 Self-align planerized bottom electrode phase change memory and manufacturing method 3 2010
8097487 Method for making a phase change memory device with vacuum cell thermal isolation 3 2010
* 2011/0034,003 Vacuum Cell Thermal Isolation for a Phase Change Memory Device 24 2010
8110430 Vacuum jacket for phase change memory element 2 2010
8497705 Phase change device for interconnection of programmable logic device 0 2010
8467238 Dynamic pulse operation for phase change memory 1 2010
8110456 Method for making a self aligning memory device 0 2010
8094488 Set algorithm for phase change memory cell 4 2010
* 2011/0075,475 SET ALGORITHM FOR PHASE CHANGE MEMORY CELL 1 2010
8263960 Phase change memory cell with filled sidewall memory element and method for fabricating the same 1 2010
* 2011/0133,150 Phase Change Memory Cell with Filled Sidewall Memory Element and Method for Fabricating the Same 4 2010
8315088 Multiple phase change materials in an integrated circuit for system on a chip application 1 2011
8228721 Refresh circuitry for phase change memory 3 2011
8912515 Manufacturing method for pipe-shaped electrode phase change memory 0 2011
* 2011/0163,288 Manufacturing Method for Pipe-Shaped Electrode Phase Change Memory 2 2011
8222071 Method for making self aligning pillar memory cell device 0 2011
8313979 Phase change memory cell having vertical channel access transistor 1 2011
* 2011/0217,818 PHASE CHANGE MEMORY CELL HAVING VERTICAL CHANNEL ACCESS TRANSISTOR 7 2011
8324681 Stacked non-volatile memory device and methods for fabricating the same 1 2011
8237144 Polysilicon plug bipolar transistor for phase change memory 1 2011
8587983 Resistance random access memory structure for enhanced retention 3 2011
8987700 Thermally confined electrode for programmable resistance memory 1 2011
8293600 Thermally stabilized electrode structure 1 2011
8916845 Low operational current phase change memory structures 0 2011
8779408 Phase change memory cell structure 1 2012
8860111 Phase change memory cell array with self-converged bottom electrode and method for manufacturing 0 2012
8624236 Phase change memory cell having vertical channel access transistor 2 2012
9076964 Methods for forming resistance random access memory structure 0 2013
9559113 SSL/GSL gate oxide in 3D vertical channel NAND 0 2014
8853047 Self aligned fin-type programmable memory cell 0 2014
9159412 Staggered write and verify for phase change memory 1 2014
9336879 Multiple phase change materials in an integrated circuit for system on a chip application 0 2015
9672906 Phase change memory with inter-granular switching 0 2016
 
INTEL CORPORATION (2)
* 7242019 Shunted phase change memory 7 2002
* 6707712 Method for reading a structural phase-change memory 199 2003
 
SOUTH HAMPTON, UNIVERSITY OF (1)
9029823 Phase change memory devices and methods comprising gallium, lanthanide and chalcogenide compounds 1 2013
 
WINBOND ELECTRONICS CORP. (1)
* 2007/0290,185 Phase change memory cells and methods for fabricating the same 3 2006
 
UNIVERSITY OF SOUTHAMPTON (1)
8624215 Phase change memory devices and methods comprising gallium, lanthanide and chalcogenide compounds 4 2006
* Cited By Examiner