US Patent No: 6,567,293

Number of patents in Portfolio can not be more than 2000

Single level metal memory cell using chalcogenide cladding

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Abstract

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An apparatus including a volume of phase change material disposed between a first conductor and a second conductor on a substrate, and a plurality of electrodes coupled to the volume of phase change material and the first conductor. A method including introducing, over a first conductor on a substrate, a plurality of electrodes coupled to the first conductor, introducing a phase change material over the plurality of electrodes and in electrical communication with the plurality of electrodes, and introducing a second conductor over the phase change material and coupled to the phase change material.

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First Claim

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Patent Owner(s)

Patent OwnerAddressTotal Patents
OVONYX MEMORY TECHNOLOGY, LLCALEXANDRIA, VA302

International Classification(s)

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Gill, Manzur Cupertino, CA 77 2572
Lowrey, Tyler A San Jose, CA 209 10598

Cited Art Landscape

Patent Info (Count) # Cites Year
 
ROUND ROCK RESEARCH, LLC (9)
5,789,758 Chalcogenide memory cell with a plurality of chalcogenide electrodes 355 1995
5,879,955 Method for fabricating an array of ultra-small pores for chalcogenide memory cells 276 1995
5,998,244 Memory cell incorporating a chalcogenide element and method of making same 326 1996
6,002,140 Method for fabricating an array of ultra-small pores for chalcogenide memory cells 44 1997
6,031,287 Contact structure and memory element incorporating the same 466 1997
5,970,336 Method of making memory cell incorporating a chalcogenide element 280 1997
5,920,788 Chalcogenide memory cell with a plurality of chalcogenide electrodes 489 1997
6,229,157 Method of forming a polysilicon diode and devices incorporating such diode 50 1999
6,153,890 Memory cell incorporating a chalcogenide element 262 1999
 
OVONYX MEMORY TECHNOLOGY, LLC (4)
* 5,825,046 Composite memory material comprising a mixture of phase-change memory material and dielectric material 361 1996
5,933,365 Memory element with energy control mechanism 407 1997
6,087,674 Memory element with memory material comprising phase-change material and dielectric material 549 1998
6,339,544 Method to enhance performance of thermal resistor device 409 2000
 
OVONYX, INC. (1)
5,296,716 Electrically erasable, directly overwritable, multibit single cell memory elements and arrays fabricated therefrom 468 1991
* Cited By Examiner

Patent Citation Ranking

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Patent Info (Count) # Cites Year
 
SILICON STORAGE TECHNOLOGY, INC. (2)
6,937,507 Memory device and method of operating same 241 2003
* 2005/0122,771 MEMORY DEVICE AND METHOD OF OPERATING SAME 3 2003
 
Other [Check patent profile for assignment information] (13)
* 2004/0157,417 Methods to form a memory cell with metal-rich metal chalcogenide 0 2004
* 2004/0211,957 Method and apparatus for controlling metal doping of a chalcogenide memory element 8 2004
* 2004/0223,357 Multiple data state memory cell 0 2004
* 2005/0018,509 Complementary bit resistance memory sensor and method of operation 0 2004
* 2005/0148,150 Memory element and its method of formation 2 2004
* 2005/0157,567 Multiple data state memory cell 0 2005
* 2005/0286,294 Resistance variable memory elements based on polarized silver-selenide network growth 7 2005
* 2006/0023,532 Method of operating a complementary bit resistance memory sensor 2 2005
* 2006/0171,224 1T-nmemory cell structure and its method of formation and operation 15 2006
* 2006/0245,234 Method of operating a complementary bit resistance memory sensor and method of operation 1 2006
* 2007/0235,712 RESISTANCE VARIABLE MEMORY CELLS 8 2007
* 2008/0210,921 Silver selenide film stoichiometry and morphology control in sputter deposition 1 2008
* 2009/0098,717 CO-SPUTTER DEPOSITION OF METAL-DOPED CHALCOGENIDES 2 2008
 
NANOCHIP, INC. (13)
6,985,377 Phase change media for high density data storage 11 2003
* 2004/0145,941 Phase change media for high density data storage 2 2003
7,379,412 Methods for writing and reading highly resolved domains for high density data storage 1 2004
7,301,887 Methods for erasing bit cells in a high density data storage device 2 2004
* 2005/0232,061 Systems for writing and reading highly resolved domains for high density data storage 6 2004
7,463,573 Patterned media for a high density data storage device 5 2005
7,367,119 Method for forming a reinforced tip for a probe storage device 3 2005
7,309,630 Method for forming patterned media for a high density data storage device 93 2005
* 2007/0010,054 Method for forming patterned media for a high density data storage device 6 2005
* 2007/0006,455 Methods for forming high density data storage devices with read/write probes with hollow or reinforced tips 0 2005
7,336,524 Atomic probes and media for high density data storage 2 2005
7,391,707 Devices and methods of detecting movement between media and probe tip in a probe data storage system 3 2007
7,414,953 Memory having a layer with electrical conductivity anisotropy 3 2007
 
U.S. BANK NATIONAL ASSOCIATION (16)
* 2003/0047,772 Agglomeration elimination for metal sputter deposition of chalcogenides 2 2002
* 2003/0198,118 Method for reading a structural phase-change memory 0 2003
* 2004/0007,718 Stoichiometry for chalcogenide glasses useful for memory devices and method of formation 0 2003
* 2004/0124,406 Method of forming non-volatile resistance variable devices, method of forming a programmable memory cell of memory circuitry, and a non-volatile resistance variable device 0 2003
* 2004/0144,968 Agglomeration elimination for metal sputter deposition of chalcogenides 1 2004
* 2004/0171,208 Method of manufacture of programmable conductor memory 3 2004
* 2004/0232,551 Electrode structure for use in an integrated circuit 2 2004
* 2005/0018,493 Programmable conductor random access memory and method for sensing same 0 2004
* 2005/0146,958 Rewrite prevention in a variable resistance memory 4 2005
* 2007/0152,204 PCRAM device with switching glass layer 2 2007
* 2007/0145,463 PCRAM device with switching glass layer 6 2007
* 2007/0247,895 METHOD AND APPARATUS PROVIDING A CROSS-POINT MEMORY ARRAY USING A VARIABLE RESISTANCE MEMORY CELL AND CAPACITANCE 0 2007
* 2008/0185,574 Method of forming non-volatile resistance variable devices 12 2008
* 2008/0188,034 Assemblies displaying differential negative resistance, semiconductor constructions, and methods of forming assemblies displaying differential negative resistance 6 2008
* 2010/0171,091 Memory array for increased bit density and method of forming the same 1 2010
* 2010/0171,088 RESISTANCE VARIABLE MEMORY DEVICE WITH SPUTTERED METAL-CHALCOGENIDE REGION AND METHOD OF FABRICATION 1 2010
 
Micron Technology, Inc. (180)
* 2002/0168,852 PCRAM memory cell and method of making same 24 2001
6,951,805 Method of forming integrated circuitry, method of forming memory circuitry, and method of forming random access memory circuitry 9 2001
6,955,940 Method of forming chalcogenide comprising devices 29 2001
* 6,815,818 Electrode structure for use in an integrated circuit 13 2001
* 2003/0096,497 Electrode structure for use in an integrated circuit 13 2001
6,873,538 Programmable conductor random access memory and a method for writing thereto 17 2001
* 2003/0117,831 Programmable conductor random access memory and a method for writing thereto 13 2001
6,909,656 PCRAM rewrite prevention 12 2002
* 2003/0128,612 PCRAM rewrite prevention 16 2002
6,791,885 Programmable conductor random access memory and method for sensing same 10 2002
* 2003/0156,463 Programmable conductor random access memory and method for sensing same 7 2002
6,891,749 Resistance variable ‘on ’ memory 22 2002
6,809,362 Multiple data state memory cell 19 2002
* 2003/0156,468 Resistance variable 'on' memory 3 2002
6,937,528 Variable resistance memory and method for sensing same 22 2002
* 2003/0169,625 Programmable conductor random access memory and method for sensing same 52 2002
6,849,868 Methods and apparatus for resistance variable material cells 22 2002
* 2003/0173,558 Methods and apparatus for resistance variable material cells 2 2002
6,864,500 Programmable conductor memory cell structure 217 2002
6,858,482 Method of manufacture of programmable switching circuits and memory cells employing a glass layer 58 2002
6,855,975 Thin film diode integrated with chalcogenide memory cell 35 2002
* 2003/0194,865 Method of manufacture of programmable conductor memory 3 2002
* 2003/0193,059 Programmable conductor memory cell structure and method therefor 1 2002
* 2003/0193,053 Thin film diode integrated with chalcogenide memory cell 11 2002
7,015,494 Assemblies displaying differential negative resistance 13 2002
* 2004/0007,749 ASSEMBLIES DISPLAYING DIFFERENTIAL NEGATIVE RESISTANCE 0 2002
7,071,021 PCRAM memory cell and method of making same 20 2002
7,018,863 Method of manufacture of a resistance variable memory cell 10 2002
* 2004/0038,480 Method of manufacture of a PCRAM memory cell 3 2002
7,364,644 Silver selenide film stoichiometry and morphology control in sputter deposition 3 2002
7,163,837 Method of forming a resistance variable memory element 7 2002
7,010,644 Software refreshed memory device and method 9 2002
6,867,114 Methods to form a memory cell with metal-rich metal chalcogenide 22 2002
6,867,996 Single-polarity programmable resistance-variable memory element 46 2002
6,864,521 Method to control silver concentration in a resistance variable memory element 19 2002
6,856,002 Graded GexSe100-x concentration in PCRAM 20 2002
* 2004/0053,461 Graded GexSe100-x concentration in PCRAM 1 2002
* 2004/0043,245 Method to control silver concentration in a resistance variable memory element 1 2002
6,949,453 Agglomeration elimination for metal sputter deposition of chalcogenides 3 2002
* 6,878,569 Agglomeration elimination for metal sputter deposition of chalcogenides 10 2002
6,894,304 Apparatus and method for dual cell common electrode PCRAM memory device 128 2003
6,813,178 Chalcogenide glass constant current device, and its method of fabrication and operation 18 2003
7,022,579 Method for filling via with metal 2 2003
7,050,327 Differential negative resistance memory 18 2003
6,888,155 Stoichiometry for chalcogenide glasses useful for memory devices and method of formation 25 2003
6,961,277 Method of refreshing a PCRAM memory device 26 2003
7,061,004 Resistance variable memory elements and methods of formation 8 2003
* 2005/0017,233 Performance PCRAM cell 5 2003
6,812,087 Methods of forming non-volatile resistance variable devices and methods of forming silver selenide comprising structures 14 2003
6,858,465 Elimination of dendrite formation during metal/chalcogenide glass deposition 4 2003
6,833,559 Non-volatile resistance variable device 3 2003
6,882,578 PCRAM rewrite prevention 4 2003
6,998,697 Non-volatile resistance variable devices 13 2003
7,528,401 Agglomeration elimination for metal sputter deposition of chalcogenides 2 2004
6,974,965 Agglomeration elimination for metal sputter deposition of chalcogenides 4 2004
7,105,864 Non-volatile zero field splitting resonance memory 7 2004
* 2005/0167,689 Non-volatile zero field splitting resonance memory 2 2004
7,056,762 Methods to form a memory cell with metal-rich metal chalcogenide 13 2004
7,022,555 Methods of forming a semiconductor memory device 1 2004
6,949,402 Method of forming a non-volatile resistance variable device 1 2004
6,953,720 Methods for forming chalcogenide glass-based memory elements 14 2004
7,479,650 Method of manufacture of programmable conductor memory 55 2004
7,098,068 Method of forming a chalcogenide material containing device 6 2004
* 2005/0202,588 Method of forming a chalcogenide material containing device 0 2004
7,087,454 Fabrication of single polarity programmable resistance structure 12 2004
7,087,919 Layered resistance variable memory device and method of fabrication 15 2004
* 2004/0192,006 Layered resistance variable memory device and method of fabrication 16 2004
6,908,808 Method of forming and storing data in a multiple state memory cell 4 2004
7,002,833 Complementary bit resistance memory sensor and method of operation 44 2004
7,115,504 Method of forming electrode structure for use in an integrated circuit 15 2004
7,115,992 Electrode structure for use in an integrated circuit 5 2004
7,332,401 Method of fabricating an electrode structure for use in an integrated circuit 21 2004
7,459,764 Method of manufacture of a PCRAM memory cell 7 2004
7,190,048 Resistance variable memory device and method of fabrication 11 2004
* 2006/0012,008 Resistance variable memory device and method of fabrication 1 2004
7,365,411 Resistance variable memory with temperature tolerant materials 58 2004
7,354,793 Method of forming a PCRAM device incorporating a resistance-variable chalocogenide element 8 2004
* 2006/0035,403 PCRAM device with switching glass layer 2 2004
6,954,385 Method and apparatus for sensing resistive memory state 17 2004
7,030,410 Resistance variable device 14 2004
7,209,378 Columnar 1T-N memory cell structure 14 2004
7,151,688 Sensing of resistance variable memory devices 10 2004
* 2006/0044,906 Sensing of resistance variable memory devices 0 2004
7,094,700 Plasma etching methods and methods of forming memory devices comprising a chalcogenide comprising layer received operably proximate conductive electrodes 2 2004
* 2005/0054,207 Plasma etching methods and methods of forming memory devices comprising a chalcogenide comprising layer received operably proximate conductive electrodes 0 2004
7,223,627 Memory element and its method of formation 7 2004
7,329,558 Differential negative resistance memory 8 2004
7,112,484 Thin film diode integrated with chalcogenide memory cell 7 2004
7,049,009 Silver selenide film stoichiometry and morphology control in sputter deposition 3 2004
7,374,174 Small electrode for resistance variable devices 9 2004
* 2006/0131,556 Small electrode for resistance variable devices 3 2004
* 2006/0131,555 Resistance variable devices with controllable channels 113 2004
7,317,200 SnSe-based limited reprogrammable cell 7 2005
7,224,632 Rewrite prevention in a variable resistance memory 4 2005
7,202,520 Multiple data state memory cell 6 2005
7,348,205 Method of forming resistance variable devices 6 2005
* 2005/0157,573 Method of forming non-volatile resistance variable devices 0 2005
7,709,289 Memory elements having patterned electrodes and method of forming the same 0 2005
7,427,770 Memory array for increased bit density 4 2005
7,269,044 Method and apparatus for accessing a memory array 1 2005
7,385,868 Method of refreshing a PCRAM memory device 9 2005
7,269,079 Power circuits for reducing a number of power supply voltage taps required for sensing a resistive memory 1 2005
7,326,950 Memory device with switching glass layer 9 2005
7,233,520 Process for erasing chalcogenide variable resistance memory bits 7 2005
* 2007/0008,768 Process for erasing chalcogenide variable resistance memory bits 1 2005
7,274,034 Resistance variable memory device with sputtered metal-chalcogenide region and method of fabrication 8 2005
7,332,735 Phase change memory cell and method of formation 27 2005
7,317,567 Method and apparatus for providing color changing thin film material 8 2005
7,518,212 concentration in PCRAM 12 2005
7,579,615 Access transistor for memory device 6 2005
* 2007/0034,921 Access transistor for memory device 10 2005
7,304,368 Chalcogenide-based electrokinetic memory element and method of forming the same 8 2005
7,251,154 Method and apparatus providing a cross-point memory array using a variable resistance memory cell and capacitance 16 2005
* 2007/0035,990 Method and apparatus providing a cross-point memory array using a variable resistance memory cell and capacitance 1 2005
7,277,313 Resistance variable memory element with threshold device and method of forming the same 7 2005
* 2007/0047,297 Resistance variable memory element with threshold device and method of forming the same 0 2005
7,199,444 Memory device, programmable resistance memory cell and memory array 3 2005
7,242,603 Method of operating a complementary bit resistance memory sensor 9 2005
7,294,527 Method of forming a memory cell 8 2005
7,307,908 Software refreshed memory device and method 5 2005
7,235,419 Method of making a memory cell 5 2005
7,550,818 Method of manufacture of a PCRAM memory cell 6 2006
7,396,699 Method of forming non-volatile resistance variable devices and method of forming a programmable memory cell of memory circuitry 7 2006
* 2006/0270,099 Method of forming non-volatile resistance variable devices and method of forming a programmable memory cell of memory circuitry 0 2006
7,547,905 Programmable conductor memory cell structure and method therefor 2 2006
7,723,713 Layered resistance variable memory device and method of fabrication 10 2006
* 2007/0007,506 Layered resistance variable memory device and method of fabrication 3 2006
7,393,798 Resistance variable memory with temperature tolerant materials 15 2006
7,190,608 Sensing of resistance variable memory devices 8 2006
7,459,336 Method of forming a chalcogenide material containing device 0 2006
7,366,003 Method of operating a complementary bit resistance memory sensor and method of operation 1 2006
* 2006/0243,973 Thin film diode integrated with chalcogenide memory cell 3 2006
7,692,177 Resistance variable memory element and its method of formation 7 2006
7,348,209 Resistance variable memory device and method of fabrication 7 2006
7,700,422 Methods of forming memory arrays for increased bit density 0 2006
7,910,397 Small electrode for resistance variable devices 0 2006
7,663,133 Memory elements having patterned electrodes and method of forming the same 0 2006
* 2007/0059,882 Memory elements having patterned electrodes and method of forming the same 5 2006
7,289,349 Resistance variable memory element with threshold device and method of forming the same 9 2006
7,366,045 Power circuits for reducing a number of power supply voltage taps required for sensing a resistive memory 0 2006
* 2007/0104,010 Power circuits for reducing a number of power supply voltage taps required for sensing a resistive memory 5 2006
7,498,231 Multiple data state memory cell 0 2007
* 2007/0128,792 Multiple data state memory cell 3 2007
7,282,783 Resistance variable memory device and method of fabrication 9 2007
7,709,885 Access transistor for memory device 15 2007
7,994,491 PCRAM device with switching glass layer 2 2007
7,759,665 PCRAM device with switching glass layer 6 2007
7,643,333 Process for erasing chalcogenide variable resistance memory bits 1 2007
7,687,793 Resistance variable memory cells 41 2007
7,564,731 Software refreshed memory device and method 4 2007
7,668,000 Method and apparatus providing a cross-point memory array using a variable resistance memory cell and capacitance 2 2007
7,433,227 Resistance variable memory device with sputtered metal-chalcogenide region and method of fabrication 9 2007
8,101,936 SnSe-based limited reprogrammable cell 0 2007
7,663,137 Phase change memory cell and method of formation 15 2007
* 2008/0142,773 PHASE CHANGE MEMORY CELL AND METHOD OF FORMATION 8 2007
7,745,808 Differential negative resistance memory 7 2007
7,749,853 Method of forming a variable resistance memory device comprising tin selenide 6 2008
7,863,597 Resistance variable memory devices with passivating material 2 2008
7,879,646 Assemblies displaying differential negative resistance, semiconductor constructions, and methods of forming assemblies displaying differential negative resistance 2 2008
7,785,976 Method of forming a memory device incorporating a resistance-variable chalcogenide element 8 2008
7,586,777 Resistance variable memory with temperature tolerant materials 10 2008
7,869,249 Complementary bit PCRAM sense amplifier and method of operation 2 2008
7,551,509 Power circuits for reducing a number of power supply voltage taps required for sensing a resistive memory 1 2008
7,682,992 Resistance variable memory with temperature tolerant materials 7 2008
7,701,760 Resistance variable memory device with sputtered metal-chalcogenide region and method of fabrication 9 2008
7,768,861 Software refreshed memory device and method 0 2009
7,791,058 Enhanced memory density resistance variable memory cells, arrays, devices and systems including the same, and methods of fabrication 9 2009
7,978,500 Method and apparatus providing a cross-point memory array using a variable resistance memory cell and capacitance 0 2010
7,924,603 Resistance variable memory with temperature tolerant materials 2 2010
7,968,927 Memory array for increased bit density and method of forming the same 0 2010
7,940,556 Resistance variable memory device with sputtered metal-chalcogenide region and method of fabrication 2 2010
8,652,903 Access transistor for memory device 0 2010
8,263,958 Layered resistance variable memory device and method of fabrication 3 2010
8,334,186 Method of forming a memory device incorporating a resistance variable chalcogenide element 1 2010
7,944,768 Software refreshed memory device and method 0 2010
8,030,636 Enhanced memory density resistance variable memory cells, arrays, devices and systems including the same, and methods of fabrication 2 2010
8,189,366 Method and apparatus providing a cross-point memory array using a variable resistance memory cell and capacitance 1 2011
8,487,288 Memory device incorporating a resistance variable chalcogenide element 0 2011
8,611,136 Method and apparatus providing a cross-point memory array using a variable resistance memory cell and capacitance 0 2012
8,895,401 Method of forming a memory device incorporating a resistance variable chalcogenide element 1 2012
 
GLOBALFOUNDRIES INC. (4)
7,038,231 Non-planarized, self-aligned, non-volatile phase-change memory array and method of formation 6 2004
* 2005/0242,338 Non-planarized, self-aligned, non-volatile phase-change memory array and method of formation 2 2004
7,682,866 Non-planarized, self-aligned, non-volatile phase-change memory array and method of formation 1 2006
* 2006/0145,134 Non-planarized, self-aligned, non-volatile phase-change memory array and method of formation 2 2006
 
Boise State University (2)
8,467,236 Continuously variable resistor 1 2010
* 2011/0037,558 CONTINUOUSLY VARIABLE RESISTOR 1 2010
 
SAMSUNG ELECTRONICS CO., LTD. (5)
7,515,461 Current compliant sensing architecture for multilevel phase change memory 57 2007
8,138,028 Method for manufacturing a phase change memory device with pillar bottom electrode 6 2007
* 2008/0191,187 METHOD FOR MANUFACTURING A PHASE CHANGE MEMORY DEVICE WITH PILLAR BOTTOM ELECTRODE 117 2007
8,030,634 Memory array with diode driver and method for fabricating the same 2 2008
7,825,398 Memory cell having improved mechanical stability 3 2008
 
SUMITOMO ELECTRIC INDUSTRIES, LTD. (1)
* 2002/0116,955 Method of forming soot preform 1 2002
 
OVONYX MEMORY TECHNOLOGY, LLC (9)
* 7,319,057 Phase change material memory device 6 2001
* 2003/0082,908 Phase change material memory device 2 2001
* 6,869,841 Carbon-containing interfacial layer for phase-change memory 10 2003
7,399,655 Damascene conductive line for contacting an underlying memory element 3 2003
* 2005/0029,627 Damascene conductive line for contacting an underlying memory element 4 2003
* 7,728,352 Damascene conductive line for contacting an underlying memory element 1 2008
* 2008/0246,161 Damascene conductive line for contacting an underlying memory element 2 2008
* 8,440,535 Forming a phase change memory with an ovonic threshold switch 0 2012
* 2012/0220,099 Forming a Phase Change Memory With an Ovonic Threshold Switch 1 2012
 
ROUND ROCK RESEARCH, LLC (21)
6,867,064 Method to alter chalcogenide glass for improved switching characteristics 13 2002
* 2003/0155,606 Method to alter chalcogenide glass for improved switching characteristics 8 2002
6,890,790 Co-sputter deposition of metal-doped chalcogenides 8 2002
6,903,361 Non-volatile memory structure 32 2003
* 2005/0056,910 NON-VOLATILE MEMORY STRUCTURE 0 2003
7,153,721 Resistance variable memory elements based on polarized silver-selenide network growth 10 2004
* 2005/0162,907 Resistance variable memory elements based on polarized silver-selenide network growth 0 2004
7,583,551 Power management control and controlling memory refresh operations 6 2004
* 2005/0201,174 Power management control and controlling memory refresh operations 15 2004
* 2004/0223,390 Resistance variable memory element having chalcogenide glass for improved switching characteristics 7 2004
7,202,104 Co-sputter deposition of metal-doped chalcogenides 1 2004
* 2004/0235,235 Co-sputter deposition of metal-doped chalcogenides 0 2004
6,946,347 Non-volatile memory structure 10 2004
* 2005/0059,187 Non-volatile memory structure 0 2004
7,276,722 Non-volatile memory structure 7 2005
7,446,393 Co-sputter deposition of metal-doped chalcogenides 0 2007
7,491,963 Non-volatile memory structure 0 2007
7,964,436 Co-sputter deposition of metal-doped chalcogenides 0 2008
8,619,485 Power management control and controlling memory refresh operations 1 2009
* 2009/0147,608 POWER MANAGEMENT CONTROL AND CONTROLLING MEMORY REFRESH OPERATIONS 3 2009
9,142,263 Power management control and controlling memory refresh operations 0 2013
 
MACRONIX INTERNATIONAL CO., LTD. (291)
7,385,235 Spacer chalcogenide memory device 93 2004
7,033,856 Spacer chalcogenide memory method 159 2004
* 2005/0093,022 Spacer chalcogenide memory device 20 2004
* 2005/0062,074 Spacer chalcogenide memory method 3 2004
7,220,983 Self-aligned small contact phase-change memory method and device 196 2004
7,514,288 Manufacturing methods for thin film fuse phase change ram 8 2005
7,321,130 Thin film fuse phase change RAM and manufacturing method 115 2005
7,238,994 Thin film plate phase change ram circuit and manufacturing method 101 2005
* 2006/0284,279 Thin film fuse phase change RAM and manufacturing method 28 2005
* 2006/0286,709 Manufacturing methods for thin film fuse phase change ram 208 2005
* 2006/0284,157 Thin film plate phase change RAM circuit and manufacturing method 25 2005
7,608,503 Side wall active pin memory and manufacturing method 16 2005
* 2006/0108,667 Method for manufacturing a small pin on integrated circuits or other devices 177 2005
* 2006/0110,878 Side wall active pin memory and manufacturing method 231 2005
* 2007/0111,429 Method of manufacturing a pipe shaped phase change memory 167 2006
7,507,986 Thermal isolation for an active-sidewall phase change memory cell 51 2006
7,432,206 Self-aligned manufacturing method, and manufacturing method for thin film fuse phase change ram 2 2006
7,394,088 Thermally contained/insulated phase change memory device and method (combined) 115 2006
* 2007/0173,063 Self-aligned manufacturing method, and manufacturing method for thin film fuse phase change ram 18 2006
* 2007/0108,430 Thermally contained/insulated phase change memory device and method (combined) 25 2006
7,956,358 I-shaped phase change memory cell with thermal isolation 3 2006
7,635,855 I-shaped phase change memory cell 9 2006
7,825,396 Self-align planerized bottom electrode phase change memory and manufacturing method 0 2006
* 2007/0158,645 Self-align planerized bottom electrode phase change memory and manufacturing method 159 2006
7,471,555 Thermally insulated phase change memory device 5 2006
* 2007/0109,836 Thermally insulated phase change memory device and manufacturing method 20 2006
7,599,217 Memory cell device and manufacturing method 3 2006
8,062,833 Chalcogenide layer etching method 1 2006
* 2007/0154,847 Chalcogenide layer etching method 163 2006
7,910,907 Manufacturing method for pipe-shaped electrode phase change memory 3 2006
7,397,060 Pipe shaped phase change memory 112 2006
* 2007/0108,429 Pipe shaped phase change memory 19 2006
7,554,144 Memory device and manufacturing method 6 2006
* 2007/0241,371 Memory device and manufacturing method 3 2006
7,928,421 Phase change memory cell with vacuum spacer 7 2006
7,829,876 Vacuum cell thermal isolation for a phase change memory device 5 2006
7,479,649 Vacuum jacketed electrode for phase change memory element 65 2006
7,449,710 Vacuum jacket for phase change memory element 87 2006
* 2007/0131,980 Vacuum jacket for phase change memory element 15 2006
* 2007/0126,040 Vacuum cell thermal isolation for a phase change memory device 165 2006
7,521,364 Surface topology improvement method for plug surface areas 0 2006
7,456,421 Vertical side wall active pin structures in a phase change memory and manufacturing methods 9 2006
* 2007/0176,261 Vertical Side Wall Active Pin Structures in a Phase Change Memory and Manufacturing Methods 53 2006
8,129,706 Structures and methods of a bistable resistive random access memory 10 2006
* 2007/0257,300 Structures and Methods of a Bistable Resistive Random Access Memory 141 2006
7,608,848 Bridge resistance random access memory device with a singular contact structure 82 2006
7,605,079 Manufacturing method for phase change RAM with electrode layer process 11 2006
7,514,367 Method for manufacturing a narrow structure on an integrated circuit 1 2006
* 2007/0155,172 Manufacturing Method for Phase Change RAM with Electrode Layer Process 174 2006
* 2006/0286,743 Method for Manufacturing a Narrow Structure on an Integrated Circuit 162 2006
7,423,300 Single-mask phase change memory element 102 2006
7,820,997 Resistor random access memory cell with reduced active area and reduced contact areas 1 2006
7,732,800 Resistor random access memory cell with L-shaped electrode 2 2006
* 2007/0278,529 RESISTOR RANDOM ACCESS MEMORY CELL WITH L-SHAPED ELECTRODE 20 2006
* 2007/0281,420 RESISTOR RANDOM ACCESS MEMORY CELL WITH REDUCED ACTIVE AREA AND REDUCED CONTACT AREAS 16 2006
7,459,717 Phase change memory cell and manufacturing method 18 2006
7,414,258 Spacer electrode small pin phase change memory RAM and manufacturing method 2 2006
* 2007/0121,363 Phase Change Memory Cell and Manufacturing Method 33 2006
8,237,140 Self-aligned, embedded phase change RAM 3 2006
* 2006/0284,158 SELF-ALIGNED, EMBEDDED PHASE CHANGE RAM AND MANUFACTURING METHOD 173 2006
7,642,539 Thin film fuse phase change cell with thermal isolation pad and manufacturing method 3 2006
7,560,337 Programmable resistive RAM and manufacturing method 31 2006
* 2007/0173,019 Programmable Resistive Ram and Manufacturing Method 206 2006
7,696,506 Memory cell with memory material insulation and manufacturing method 10 2006
7,785,920 Method for making a pillar-type phase change memory element 3 2006
* 2008/0014,676 Method for Making a Pillar-Type Phase Change Memory Element 112 2006
7,741,636 Programmable resistive RAM and manufacturing method 3 2006
* 2007/0161,186 Programmable Resistive RAM and Manufacturing Method 170 2006
7,450,411 Phase change memory device and manufacturing method 4 2006
7,595,218 Programmable resistive RAM and manufacturing method 2 2006
* 2007/0158,690 Programmable Resistive RAM and Manufacturing Method 167 2006
* 2007/0158,632 Method for Fabricating a Pillar-Shaped Phase Change Memory Element 163 2006
7,531,825 Method for forming self-aligned thermal isolation cell for a variable resistance memory array 2 2006
7,442,603 Self-aligned structure and method for confining a melting point in a resistor random access memory 10 2006
* 2008/0121,861 Self-Aligned Structure and Method for Confining a Melting Point in a Resistor Random Access Memory 4 2006
7,598,512 Thin film fuse phase change cell with thermal isolation layer and manufacturing method 2 2006
* 2006/0284,214 THIN FILM FUSE PHASE CHANGE CELL WITH THERMAL ISOLATION LAYER AND MANUFACTURING METHOD 167 2006
7,772,581 Memory device having wide area phase change element and small electrode contact area 57 2006
* 2008/0061,341 Memory Device Having Wide Area Phase Change Element and Small Electrode Contact Area 25 2006
7,504,653 Memory cell device with circumferentially-extending memory element 31 2006
7,510,929 Method for making memory cell device 2 2006
* 2008/0096,375 Method for Making Memory Cell Device 3 2006
7,863,655 Phase change memory cells with dual access devices 1 2006
7,527,985 Method for manufacturing a resistor random access memory with reduced active area and reduced contact areas 4 2006
7,388,771 Methods of operating a bistable resistance random access memory with multiple memory layers and multilevel memory states 6 2006
* 2008/0106,923 Phase Change Memory Cells with Dual Access Devices 25 2006
* 2008/0094,885 Bistable Resistance Random Access Memory Structures with Multiple Memory Layers and Multilevel Memory States 6 2006
* 2008/0096,341 Method for Manufacturing a Resistor Random Access Memory with Reduced Active Area and Reduced Contact Areas 2 2006
8,067,762 Resistance random access memory structure for enhanced retention 5 2006
* 2008/0116,440 Resistance Random Access Memory Structure for Enhanced Retention 6 2006
7,816,661 Air cell thermal isolation for a memory array formed of a programmable resistive material 5 2006
* 2008/0266,940 Air Cell Thermal Isolation for a Memory Array Formed of a Programmable Resistive Material 12 2006
7,682,868 Method for making a keyhole opening during the manufacture of a memory cell 0 2006
7,476,587 Method for making a self-converged memory material element for memory cell 23 2006
* 2008/0138,931 Method for Making a Self-Converged Void and Bottom Electrode for Memoery Cell 49 2006
7,697,316 Multi-level cell resistance random access memory with metal oxides 76 2006
* 2008/0135,824 Method and Structure of a Multi-Level Cell Resistance Random Access Memory with Metal Oxides 14 2006
7,903,447 Method, apparatus and computer program product for read before programming process on programmable resistive memory cell 2 2006
* 2008/0144,353 Method, Apparatus and Computer Program Product for Read Before Programming Process on Programmable Resistive Memory Cell 3 2006
8,344,347 Multi-layer electrode structure 0 2006
7,688,619 Phase change memory cell and manufacturing method 87 2006
7,718,989 Resistor random access memory cell device 9 2006
* 2008/0157,053 Resistor Random Access Memory Cell Device 35 2006
7,786,460 Phase change memory device and manufacturing method 71 2007
7,440,315 Method, apparatus and computer program product for stepped reset programming process on programmable resistive memory cell 18 2007
7,433,226 Method, apparatus and computer program product for read before programming process on multiple programmable resistive memory cell 8 2007
* 2007/0109,843 Phase Change Memory Device and Manufacturing Method 160 2007
7,483,292 Memory cell with separate read and program paths 5 2007
* 2008/0186,761 Memory Cell with Separate Read and Program Paths 2 2007
8,008,643 Phase change memory cell with heater and method for fabricating the same 0 2007
7,619,237 Programmable resistive memory cell with self-forming gap 4 2007
7,534,647 Damascene phase change RAM and manufacturing method 4 2007
* 2008/0197,334 Phase Change Memory Cell with Heater and Method for Fabricating the Same 88 2007
7,956,344 Memory cell with memory element contacting ring-shaped upper end of bottom electrode 5 2007
* 2008/0203,375 Memory Cell with Memory Element Contacting Ring-Shaped Upper End of Bottom Electrode 2 2007
7,786,461 Memory structure with reduced-size memory element between memory material portions 12 2007
8,610,098 Phase change memory bridge cell with diode isolation device 0 2007
7,755,076 self align side wall active phase change memory 39 2007
7,569,844 Memory cell sidewall contacting side electrode 36 2007
* 2008/0258,126 Memory Cell Sidewall Contacting Side Electrode 36 2007
7,514,334 Thin film plate phase change RAM circuit and manufacturing method 59 2007
7,463,512 Memory element with reduced-current phase change element 21 2007
* 2008/0192,534 MEMORY ELEMENT WITH REDUCED-CURRENT PHASE CHANGE ELEMENT 17 2007
7,701,759 Memory cell device and programming methods 13 2007
* 2008/0186,755 MEMORY CELL DEVICE AND PROGRAMMING METHODS 88 2007
8,513,637 4F2 self align fin bottom electrodes FET drive phase change memory 0 2007
7,483,316 Method and apparatus for refreshing programmable resistive memory 1 2007
* 2008/0266,933 Method and Apparatus for Refreshing Programmable Resistive Memory 8 2007
7,884,342 Phase change memory bridge cell 0 2007
* 2009/0032,796 PHASE CHANGE MEMORY BRIDGE CELL 6 2007
7,729,161 Phase change memory with dual word lines and source lines and method of operating same 7 2007
* 2009/0034,323 PHASE CHANGE MEMORY WITH DUAL WORD LINES AND SOURCE LINES AND METHOD OF OPERATING SAME 9 2007
9,018,615 Resistor random access memory structure having a defined small area of electrical contact 0 2007
7,696,503 Multi-level memory cell having phase change element and asymmetrical thermal boundary 20 2007
8,178,386 Phase change memory cell array with self-converged bottom electrode and method for manufacturing 4 2007
7,642,125 Phase change memory cell in via array with self-aligned, self-converged bottom electrode and method for manufacturing 20 2007
* 2009/0072,216 PHASE CHANGE MEMORY CELL ARRAY WITH SELF-CONVERGED BOTTOM ELECTRODE AND METHOD FOR MANUFACTURING 14 2007
* 2009/0072,215 PHASE CHANGE MEMORY CELL IN VIA ARRAY WITH SELF-ALIGNED, SELF-CONVERGED BOTTOM ELECTRODE AND METHOD FOR MANUFACTURING 41 2007
7,663,135 Memory cell having a side electrode contact 5 2007
7,551,473 Programmable resistive memory with diode structure 20 2007
7,535,756 Method to tighten set distribution for PCRAM 13 2007
7,919,766 Method for making self aligning pillar memory cell device 13 2007
7,804,083 Phase change memory cell including a thermal protect bottom electrode and manufacturing methods 6 2007
* 2009/0122,588 PHASE CHANGE MEMORY CELL INCLUDING A THERMAL PROTECT BOTTOM ELECTRODE AND MANUFACTURING METHODS 6 2007
7,646,631 Phase change memory cell having interface structures with essentially equal thermal impedances and manufacturing methods 13 2007
* 2009/0147,564 PHASE CHANGE MEMORY CELL HAVING INTERFACE STRUCTURES WITH ESSENTIALLY EQUAL THERMAL IMPEDANCES AND MANUFACTURING METHODS 15 2007
7,579,613 Thin film fuse phase change RAM and manufacturing method 19 2007
7,639,527 Phase change memory dynamic resistance test and manufacturing methods 4 2008
7,884,343 Phase change memory cell with filled sidewall memory element and method for fabricating the same 9 2008
7,879,643 Memory cell with memory element contacting an inverted T-shaped bottom electrode 3 2008
* 2008/0191,186 PHASE CHANGE MEMORY CELL WITH FILLED SIDEWALL MEMORY ELEMENT AND METHOD FOR FABRICATING THE SAME 5 2008
7,879,645 Fill-in etching free pore device 13 2008
* 2009/0189,138 FILL-IN ETCHING FREE PORE DEVICE 5 2008
7,619,311 Memory cell device with coplanar electrode surface and method 13 2008
* 2008/0185,730 MEMORY CELL DEVICE WITH COPLANAR ELECTRODE SURFACE AND METHOD 9 2008
8,158,965 Heating center PCRAM structure and methods for making 1 2008
7,932,101 Thermally contained/insulated phase change memory device and method 5 2008
8,084,842 Thermally stabilized electrode structure 4 2008
* 2009/0242,880 THERMALLY STABILIZED ELECTRODE STRUCTURE 2 2008
7,791,057 Memory cell having a buried phase change region and method for fabricating the same 12 2008
* 2009/0261,313 MEMORY CELL HAVING A BURIED PHASE CHANGE REGION AND METHOD FOR FABRICATING THE SAME 13 2008
7,701,750 Phase change device having two or more substantial amorphous regions in high resistance state 14 2008
7,586,778 Methods of operating a bistable resistance random access memory with multiple memory layers and multilevel memory states 71 2008
8,415,651 Phase change memory cell having top and bottom sidewall contacts 1 2008
* 2009/0309,087 PHASE CHANGE MEMORY CELL HAVING TOP AND BOTTOM SIDEWALL CONTACTS 9 2008
7,642,123 Thermally insulated phase change memory manufacturing method 4 2008
* 2008/0268,565 THERMALLY INSULATED PHASE CHANGE MEMORY MANUFACTURING METHOD 3 2008
7,867,815 Spacer electrode small pin phase change RAM and manufacturing method 2 2008
7,777,215 Resistive memory structure with buffer layer 37 2008
7,932,506 Fully self-aligned pore-type memory cell having diode access device 4 2008
* 2010/0019,215 MUSHROOM TYPE MEMORY CELL HAVING SELF-ALIGNED BOTTOM ELECTRODE AND DIODE ACCESS DEVICE 16 2008
7,903,457 Multiple phase change materials in an integrated circuit for system on a chip application 7 2008
* 2010/0046,285 MULTIPLE PHASE CHANGE MATERIALS IN AN INTEGRATED CIRCUIT FOR SYSTEM ON A CHIP APPLICATION 12 2008
7,842,536 Vacuum jacket for phase change memory element 1 2008
* 2009/0023,242 VACUUM JACKET FOR PHASE CHANGE MEMORY ELEMENT 59 2008
7,719,913 Sensing circuit for PCRAM applications 2 2008
8,243,494 Self-aligned structure and method for confining a melting point in a resistor random access memory 0 2008
8,324,605 Dielectric mesh isolated phase change structure for phase change memory 3 2008
7,897,954 Dielectric-sandwiched pillar memory device 0 2008
7,932,129 Vertical side wall active pin structures in a phase change memory and manufacturing methods 2 2008
8,036,014 Phase change memory program method without over-reset 9 2008
7,902,538 Phase change memory cell with first and second transition temperature portions 2 2008
* 2010/0110,778 PHASE CHANGE MEMORY PROGRAM METHOD WITHOUT OVER-RESET 1 2008
8,907,316 Memory cell access device having a pn-junction with polycrystalline and single crystal semiconductor regions 1 2008
8,664,689 Memory cell access device having a pn-junction with polycrystalline plug and single-crystal semiconductor regions 0 2008
* 2010/0117,048 MEMORY CELL ACCESS DEVICE HAVING A PN-JUNCTION WITH POLYCRYSTALLINE AND SINGLE-CRYSTAL SEMICONDUCTOR REGIONS 4 2008
7,638,359 Method for making a self-converged void and bottom electrode for memory cell 4 2008
* 2009/0104,771 METHOD FOR MAKING A SELF-CONVERGED VOID AND BOTTOM ELECTRODE FOR MEMORY CELL 9 2008
7,749,854 Method for making a self-converged memory material element for memory cell 0 2008
7,687,307 Vacuum jacketed electrode for phase change memory element 1 2008
* 2009/0098,716 METHOD FOR MAKING A SELF-CONVERGED MEMORY MATERIAL ELEMENT FOR MEMORY CELL 7 2008
* 2009/0098,678 VACUUM JACKETED ELECTRODE FOR PHASE CHANGE MEMORY ELEMENT 42 2008
7,869,270 Set algorithm for phase change memory cell 5 2008
8,089,137 Integrated circuit memory with single crystal silicon on silicide driver and manufacturing method 57 2009
* 2010/0171,086 INTEGRATED CIRCUIT MEMORY WITH SINGLE CRYSTAL SILICON ON SILICIDE DRIVER AND MANUFACTURING METHOD 70 2009
7,923,285 Method for forming self-aligned thermal isolation cell for a variable resistance memory array 7 2009
* 2009/0148,981 METHOD FOR FORMING SELF-ALIGNED THERMAL ISOLATION CELL FOR A VARIABLE RESISTANCE MEMORY ARRAY 20 2009
8,107,283 Method for setting PCRAM devices 3 2009
8,030,635 Polysilicon plug bipolar transistor for phase change memory 2 2009
8,933,536 Polysilicon pillar bipolar transistor with self-aligned memory element 1 2009
7,910,906 Memory cell device with circumferentially-extending memory element 0 2009
8,084,760 Ring-shaped electrode and manufacturing method for same 3 2009
8,173,987 Integrated circuit 3D phase change memory array and manufacturing method 18 2009
8,077,505 Bipolar switching of phase change device 1 2009
8,097,871 Low operational current phase change memory structures 1 2009
8,134,857 Methods for high speed reading operation of phase change memory and device employing same 1 2009
7,933,139 One-transistor, one-resistor, one-capacitor phase change memory 21 2009
7,972,893 Memory device manufacturing method 0 2009
8,350,316 Phase change memory cells having vertical channel access transistor and memory plane 0 2009
7,968,876 Phase change memory cell having vertical channel access transistor 6 2009
8,158,963 Programmable resistive RAM and manufacturing method 0 2009
* 2009/0236,743 Programmable Resistive RAM and Manufacturing Method 0 2009
8,809,829 Phase change memory having stabilized microstructure and manufacturing method 0 2009
8,406,033 Memory device and method for sensing and fixing margin cells 5 2009
8,064,247 Rewritable memory device based on segregation/re-absorption 2 2009
8,110,822 Thermal protect PCRAM structure and methods for making 12 2009
7,894,254 Refresh circuitry for phase change memory 5 2009
7,924,600 Methods of operating a bistable resistance random access memory with multiple memory layers and multilevel memory states 4 2009
8,198,619 Phase change memory cell structure 1 2009
8,064,248 2T2R-1T1R mix mode phase change memory array 3 2009
8,110,429 Bridge resistance random access memory device and method with a singular contact structure 0 2009
7,879,692 Programmable resistive memory cell with self-forming gap 1 2009
* 2010/0029,062 PROGRAMMABLE RESISTIVE MEMORY CELL WITH SELF-FORMING GAP 7 2009
7,972,895 Memory cell device with coplanar electrode surface and method 2 2009
* 2010/0029,042 MEMORY CELL DEVICE WITH COPLANAR ELECTRODE SURFACE AND METHOD 2 2009
7,993,962 I-shaped phase change memory cell 1 2009
8,143,612 Phase change memory cell in via array with self-aligned, self-converged bottom electrode and method for manufacturing 2 2009
* 2010/0065,808 PHASE CHANGE MEMORY CELL IN VIA ARRAY WITH SELF-ALIGNED, SELF-CONVERGED BOTTOM ELECTRODE AND METHOD FOR MANUFACTURING 4 2009
8,062,923 Thin film fuse phase change cell with thermal isolation pad and manufacturing method 2 2009
7,893,418 Phase change memory cell having interface structures with essentially equal thermal impedances and manufacturing methods 0 2009
* 2010/0072,447 PHASE CHANGE MEMORY CELL HAVING INTERFACE STRUCTURES WITH ESSENTIALLY EQUAL THERMAL IMPEDANCES AND MANUFACTURING METHODS 11 2009
7,964,863 Memory cell having a side electrode contact 1 2009
7,929,340 Phase change memory cell and manufacturing method 5 2010
7,964,468 Multi-level memory cell having phase change element and asymmetrical thermal boundary 1 2010
* 2010/0151,652 MULTI-LEVEL MEMORY CELL HAVING PHASE CHANGE ELEMENT AND ASYMMETRICAL THERMAL BOUNDARY 22 2010
8,238,149 Methods and apparatus for reducing defect bits in phase change memory 5 2010
8,111,541 Method of a multi-level cell resistance random access memory with metal oxides 4 2010
7,920,415 Memory cell device and programming methods 0 2010
* 2010/0216,279 METHOD OF A MULTI-LEVEL CELL RESISTANCE RANDOM ACCESS MEMORY WITH METAL OXIDES 5 2010
* 2010/0157,665 MEMORY CELL DEVICE AND PROGRAMMING METHODS 8 2010
8,059,449 Phase change device having two or more substantial amorphous regions in high resistance state 1 2010
8,363,463 Phase change memory having one or more non-constant doping profiles 1 2010
8,178,387 Methods for reducing recrystallization time for a phase change material 4 2010
8,178,405 Resistor random access memory cell device 2 2010
7,978,509 Phase change memory with dual word lines and source lines and method of operating same 2 2010
8,080,440 Resistor random access memory cell with L-shaped electrode 5 2010
* 2010/0207,095 RESISTOR RANDOM ACCESS MEMORY CELL WITH L-SHAPED ELECTRODE 13 2010
8,178,388 Programmable resistive RAM and manufacturing method 3 2010
8,729,521 Self aligned fin-type programmable memory cell 1 2010
8,237,148 self align side wall active phase change memory 0 2010
* 2010/0237,316 4F2 SELF ALIGN SIDE WALL ACTIVE PHASE CHANGE MEMORY 4 2010
8,310,864 Self-aligned bit line under word line memory array 4 2010
7,964,437 Memory device having wide area phase change element and small electrode contact area 4 2010
7,943,920 Resistive memory structure with buffer layer 1 2010
* 2010/0276,658 Resistive Memory Structure with Buffer Layer 4 2010
8,008,114 Phase change memory device and manufacturing method 1 2010
* 2010/0291,747 Phase Change Memory Device and Manufacturing Method 27 2010
7,875,493 Memory structure with reduced-size memory element between memory material portions 5 2010
8,039,392 Resistor random access memory cell with reduced active area and reduced contact areas 2 2010
8,395,935 Cross-point self-aligned reduced cell size phase change memory 4 2010
8,143,089 Self-align planerized bottom electrode phase change memory and manufacturing method 3 2010
8,097,487 Method for making a phase change memory device with vacuum cell thermal isolation 2 2010
* 2011/0034,003 Vacuum Cell Thermal Isolation for a Phase Change Memory Device 22 2010
8,110,430 Vacuum jacket for phase change memory element 1 2010
8,497,705 Phase change device for interconnection of programmable logic device 0 2010
8,467,238 Dynamic pulse operation for phase change memory 1 2010
8,110,456 Method for making a self aligning memory device 0 2010
8,094,488 Set algorithm for phase change memory cell 3 2010
* 2011/0075,475 SET ALGORITHM FOR PHASE CHANGE MEMORY CELL 1 2010
8,263,960 Phase change memory cell with filled sidewall memory element and method for fabricating the same 0 2010
* 2011/0133,150 Phase Change Memory Cell with Filled Sidewall Memory Element and Method for Fabricating the Same 4 2010
8,315,088 Multiple phase change materials in an integrated circuit for system on a chip application 0 2011
8,228,721 Refresh circuitry for phase change memory 3 2011
8,912,515 Manufacturing method for pipe-shaped electrode phase change memory 0 2011
* 2011/0163,288 Manufacturing Method for Pipe-Shaped Electrode Phase Change Memory 2 2011
8,222,071 Method for making self aligning pillar memory cell device 0 2011
8,313,979 Phase change memory cell having vertical channel access transistor 1 2011
* 2011/0217,818 PHASE CHANGE MEMORY CELL HAVING VERTICAL CHANNEL ACCESS TRANSISTOR 7 2011
8,324,681 Stacked non-volatile memory device and methods for fabricating the same 0 2011
8,237,144 Polysilicon plug bipolar transistor for phase change memory 0 2011
8,587,983 Resistance random access memory structure for enhanced retention 3 2011
8,987,700 Thermally confined electrode for programmable resistance memory 0 2011
8,293,600 Thermally stabilized electrode structure 1 2011
8,916,845 Low operational current phase change memory structures 0 2011
8,779,408 Phase change memory cell structure 0 2012
8,860,111 Phase change memory cell array with self-converged bottom electrode and method for manufacturing 0 2012
8,624,236 Phase change memory cell having vertical channel access transistor 1 2012
9,076,964 Methods for forming resistance random access memory structure 0 2013
8,853,047 Self aligned fin-type programmable memory cell 0 2014
9,159,412 Staggered write and verify for phase change memory 0 2014
9,336,879 Multiple phase change materials in an integrated circuit for system on a chip application 0 2015
 
INTEL CORPORATION (2)
* 7,242,019 Shunted phase change memory 7 2002
* 6,707,712 Method for reading a structural phase-change memory 197 2003
 
University of South Hampton (1)
9,029,823 Phase change memory devices and methods comprising gallium, lanthanide and chalcogenide compounds 0 2013
 
WINBOND ELECTRONICS CORP. (1)
* 2007/0290,185 Phase change memory cells and methods for fabricating the same 3 2006
 
UNIVERSITY OF SOUTHAMPTON (1)
8,624,215 Phase change memory devices and methods comprising gallium, lanthanide and chalcogenide compounds 3 2006
 
APTINA IMAGING CORPORATION (2)
6,930,909 Memory device and methods of controlling resistance variation and resistance profile drift 44 2003
* 2004/0264,234 PCRAM cell operation method to control on/off resistance variation 16 2003
* Cited By Examiner