Single level metal memory cell using chalcogenide cladding
Number of patents in Portfolio can not be more than 2000
United States of America Patent
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May 20, 2003
Grant Date -
N/A
app pub date -
Sep 29, 2000
filing date -
Sep 29, 2000
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Abstract
An apparatus including a volume of phase change material disposed between a first conductor and a second conductor on a substrate, and a plurality of electrodes coupled to the volume of phase change material and the first conductor. A method including introducing, over a first conductor on a substrate, a plurality of electrodes coupled to the first conductor, introducing a phase change material over the plurality of electrodes and in electrical communication with the plurality of electrodes, and introducing a second conductor over the phase change material and coupled to the phase change material.

First Claim
Family

- 15 United States
- 10 France
- 8 Japan
- 7 China
- 5 Korea
- 2 Other
Patent Owner(s)
Patent Owner | Address | Total Patents |
---|---|---|
OVONYX MEMORY TECHNOLOGY, LLC | ALEXANDRIA, VA | 829 |
International Classification(s)
Inventor(s)
Inventor Name | Address | # of filed Patents | Total Citations |
---|---|---|---|
Gill, Manzur | Cupertino, CA | 77 | 2629 |
Lowrey, Tyler A | San Jose, CA | 209 | 10969 |
Cited Art Landscape
Patent Info | (Count) | # Cites | Year |
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5789758 Chalcogenide memory cell with a plurality of chalcogenide electrodes | 357 | 1995 | |
5879955 Method for fabricating an array of ultra-small pores for chalcogenide memory cells | 280 | 1995 | |
5998244 Memory cell incorporating a chalcogenide element and method of making same | 349 | 1996 | |
6002140 Method for fabricating an array of ultra-small pores for chalcogenide memory cells | 44 | 1997 | |
6031287 Contact structure and memory element incorporating the same | 473 | 1997 | |
5970336 Method of making memory cell incorporating a chalcogenide element | 283 | 1997 | |
5920788 Chalcogenide memory cell with a plurality of chalcogenide electrodes | 494 | 1997 | |
6229157 Method of forming a polysilicon diode and devices incorporating such diode | 51 | 1999 | |
6153890 Memory cell incorporating a chalcogenide element | 264 | 1999 | |
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* 5825046 Composite memory material comprising a mixture of phase-change memory material and dielectric material | 369 | 1996 | |
5933365 Memory element with energy control mechanism | 413 | 1997 | |
6087674 Memory element with memory material comprising phase-change material and dielectric material | 557 | 1998 | |
6339544 Method to enhance performance of thermal resistor device | 413 | 2000 | |
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5296716 Electrically erasable, directly overwritable, multibit single cell memory elements and arrays fabricated therefrom | 478 | 1991 |
Patent Citation Ranking
Forward Cite Landscape
Patent Info | (Count) | # Cites | Year |
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6937507 Memory device and method of operating same | 246 | 2003 | |
* 2005/0122,771 MEMORY DEVICE AND METHOD OF OPERATING SAME | 5 | 2003 | |
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* 2004/0157,417 Methods to form a memory cell with metal-rich metal chalcogenide | 0 | 2004 | |
* 2004/0211,957 Method and apparatus for controlling metal doping of a chalcogenide memory element | 8 | 2004 | |
* 2005/0018,509 Complementary bit resistance memory sensor and method of operation | 0 | 2004 | |
* 2005/0286,294 Resistance variable memory elements based on polarized silver-selenide network growth | 7 | 2005 | |
* 2006/0023,532 Method of operating a complementary bit resistance memory sensor | 2 | 2005 | |
* 2006/0171,224 1T-nmemory cell structure and its method of formation and operation | 16 | 2006 | |
* 2008/0210,921 Silver selenide film stoichiometry and morphology control in sputter deposition | 1 | 2008 | |
* 2009/0098,717 CO-SPUTTER DEPOSITION OF METAL-DOPED CHALCOGENIDES | 3 | 2008 | |
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6985377 Phase change media for high density data storage | 11 | 2003 | |
* 2004/0145,941 Phase change media for high density data storage | 4 | 2003 | |
7379412 Methods for writing and reading highly resolved domains for high density data storage | 1 | 2004 | |
7301887 Methods for erasing bit cells in a high density data storage device | 2 | 2004 | |
* 2005/0232,061 Systems for writing and reading highly resolved domains for high density data storage | 6 | 2004 | |
7463573 Patterned media for a high density data storage device | 5 | 2005 | |
7367119 Method for forming a reinforced tip for a probe storage device | 3 | 2005 | |
7309630 Method for forming patterned media for a high density data storage device | 95 | 2005 | |
* 2007/0010,054 Method for forming patterned media for a high density data storage device | 6 | 2005 | |
* 2007/0006,455 Methods for forming high density data storage devices with read/write probes with hollow or reinforced tips | 0 | 2005 | |
7336524 Atomic probes and media for high density data storage | 2 | 2005 | |
7391707 Devices and methods of detecting movement between media and probe tip in a probe data storage system | 4 | 2007 | |
7414953 Memory having a layer with electrical conductivity anisotropy | 3 | 2007 | |
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* 2003/0047,772 Agglomeration elimination for metal sputter deposition of chalcogenides | 3 | 2002 | |
* 2003/0198,118 Method for reading a structural phase-change memory | 0 | 2003 | |
* 2004/0007,718 Stoichiometry for chalcogenide glasses useful for memory devices and method of formation | 0 | 2003 | |
* 2004/0124,406 Method of forming non-volatile resistance variable devices, method of forming a programmable memory cell of memory circuitry, and a non-volatile resistance variable device | 0 | 2003 | |
* 2004/0144,968 Agglomeration elimination for metal sputter deposition of chalcogenides | 1 | 2004 | |
* 2004/0171,208 Method of manufacture of programmable conductor memory | 3 | 2004 | |
* 2004/0232,551 Electrode structure for use in an integrated circuit | 3 | 2004 | |
* 2005/0018,493 Programmable conductor random access memory and method for sensing same | 0 | 2004 | |
* 2005/0146,958 Rewrite prevention in a variable resistance memory | 4 | 2005 | |
* 2007/0152,204 PCRAM device with switching glass layer | 2 | 2007 | |
* 2007/0145,463 PCRAM device with switching glass layer | 6 | 2007 | |
* 2008/0310,208 PROCESS FOR ERASING CHALCOGENIDE VARIABLE RESISTANCE MEMORY BITS | 24 | 2007 | |
* 2007/0247,895 METHOD AND APPARATUS PROVIDING A CROSS-POINT MEMORY ARRAY USING A VARIABLE RESISTANCE MEMORY CELL AND CAPACITANCE | 0 | 2007 | |
* 2008/0185,574 Method of forming non-volatile resistance variable devices | 13 | 2008 | |
* 2008/0188,034 Assemblies displaying differential negative resistance, semiconductor constructions, and methods of forming assemblies displaying differential negative resistance | 6 | 2008 | |
* 2010/0171,091 Memory array for increased bit density and method of forming the same | 1 | 2010 | |
* 2010/0171,088 RESISTANCE VARIABLE MEMORY DEVICE WITH SPUTTERED METAL-CHALCOGENIDE REGION AND METHOD OF FABRICATION | 1 | 2010 | |
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6951805 Method of forming integrated circuitry, method of forming memory circuitry, and method of forming random access memory circuitry | 11 | 2001 | |
6955940 Method of forming chalcogenide comprising devices | 30 | 2001 | |
* 6815818 Electrode structure for use in an integrated circuit | 13 | 2001 | |
* 2003/0096,497 Electrode structure for use in an integrated circuit | 14 | 2001 | |
6873538 Programmable conductor random access memory and a method for writing thereto | 18 | 2001 | |
* 2003/0117,831 Programmable conductor random access memory and a method for writing thereto | 14 | 2001 | |
6909656 PCRAM rewrite prevention | 13 | 2002 | |
* 2003/0128,612 PCRAM rewrite prevention | 17 | 2002 | |
6791885 Programmable conductor random access memory and method for sensing same | 10 | 2002 | |
* 2003/0156,463 Programmable conductor random access memory and method for sensing same | 8 | 2002 | |
6858482 Method of manufacture of programmable switching circuits and memory cells employing a glass layer | 82 | 2002 | |
* 2003/0194,865 Method of manufacture of programmable conductor memory | 21 | 2002 | |
7015494 Assemblies displaying differential negative resistance | 15 | 2002 | |
* 2004/0007,749 ASSEMBLIES DISPLAYING DIFFERENTIAL NEGATIVE RESISTANCE | 1 | 2002 | |
7071021 PCRAM memory cell and method of making same | 20 | 2002 | |
7018863 Method of manufacture of a resistance variable memory cell | 10 | 2002 | |
* 2004/0038,480 Method of manufacture of a PCRAM memory cell | 4 | 2002 | |
7364644 Silver selenide film stoichiometry and morphology control in sputter deposition | 3 | 2002 | |
7163837 Method of forming a resistance variable memory element | 7 | 2002 | |
6867114 Methods to form a memory cell with metal-rich metal chalcogenide | 25 | 2002 | |
6856002 Graded GexSe100-x concentration in PCRAM | 20 | 2002 | |
* 2004/0053,461 Graded GexSe100-x concentration in PCRAM | 1 | 2002 | |
6949453 Agglomeration elimination for metal sputter deposition of chalcogenides | 3 | 2002 | |
* 6878569 Agglomeration elimination for metal sputter deposition of chalcogenides | 11 | 2002 | |
6813178 Chalcogenide glass constant current device, and its method of fabrication and operation | 18 | 2003 | |
7022579 Method for filling via with metal | 2 | 2003 | |
7050327 Differential negative resistance memory | 20 | 2003 | |
6888155 Stoichiometry for chalcogenide glasses useful for memory devices and method of formation | 26 | 2003 | |
7061004 Resistance variable memory elements and methods of formation | 8 | 2003 | |
* 2005/0017,233 Performance PCRAM cell | 8 | 2003 | |
6812087 Methods of forming non-volatile resistance variable devices and methods of forming silver selenide comprising structures | 20 | 2003 | |
6858465 Elimination of dendrite formation during metal/chalcogenide glass deposition | 4 | 2003 | |
6833559 Non-volatile resistance variable device | 3 | 2003 | |
6882578 PCRAM rewrite prevention | 6 | 2003 | |
6998697 Non-volatile resistance variable devices | 13 | 2003 | |
7528401 Agglomeration elimination for metal sputter deposition of chalcogenides | 2 | 2004 | |
6974965 Agglomeration elimination for metal sputter deposition of chalcogenides | 4 | 2004 | |
7105864 Non-volatile zero field splitting resonance memory | 7 | 2004 | |
* 2005/0167,689 Non-volatile zero field splitting resonance memory | 2 | 2004 | |
7056762 Methods to form a memory cell with metal-rich metal chalcogenide | 13 | 2004 | |
6953720 Methods for forming chalcogenide glass-based memory elements | 16 | 2004 | |
7479650 Method of manufacture of programmable conductor memory | 79 | 2004 | |
7098068 Method of forming a chalcogenide material containing device | 6 | 2004 | |
* 2005/0202,588 Method of forming a chalcogenide material containing device | 0 | 2004 | |
7087919 Layered resistance variable memory device and method of fabrication | 17 | 2004 | |
* 2004/0192,006 Layered resistance variable memory device and method of fabrication | 36 | 2004 | |
7002833 Complementary bit resistance memory sensor and method of operation | 46 | 2004 | |
7115504 Method of forming electrode structure for use in an integrated circuit | 16 | 2004 | |
7115992 Electrode structure for use in an integrated circuit | 6 | 2004 | |
7332401 Method of fabricating an electrode structure for use in an integrated circuit | 31 | 2004 | |
7459764 Method of manufacture of a PCRAM memory cell | 7 | 2004 | |
7190048 Resistance variable memory device and method of fabrication | 13 | 2004 | |
* 2006/0012,008 Resistance variable memory device and method of fabrication | 1 | 2004 | |
7354793 Method of forming a PCRAM device incorporating a resistance-variable chalocogenide element | 10 | 2004 | |
* 2006/0035,403 PCRAM device with switching glass layer | 2 | 2004 | |
6954385 Method and apparatus for sensing resistive memory state | 17 | 2004 | |
7030410 Resistance variable device | 15 | 2004 | |
7209378 Columnar 1T-N memory cell structure | 16 | 2004 | |
7151688 Sensing of resistance variable memory devices | 10 | 2004 | |
* 2006/0044,906 Sensing of resistance variable memory devices | 0 | 2004 | |
7094700 Plasma etching methods and methods of forming memory devices comprising a chalcogenide comprising layer received operably proximate conductive electrodes | 8 | 2004 | |
* 2005/0054,207 Plasma etching methods and methods of forming memory devices comprising a chalcogenide comprising layer received operably proximate conductive electrodes | 0 | 2004 | |
7329558 Differential negative resistance memory | 10 | 2004 | |
7049009 Silver selenide film stoichiometry and morphology control in sputter deposition | 3 | 2004 | |
7374174 Small electrode for resistance variable devices | 11 | 2004 | |
* 2006/0131,556 Small electrode for resistance variable devices | 6 | 2004 | |
* 2006/0131,555 Resistance variable devices with controllable channels | 118 | 2004 | |
7317200 SnSe-based limited reprogrammable cell | 7 | 2005 | |
7224632 Rewrite prevention in a variable resistance memory | 4 | 2005 | |
7348205 Method of forming resistance variable devices | 6 | 2005 | |
* 2005/0157,573 Method of forming non-volatile resistance variable devices | 0 | 2005 | |
7709289 Memory elements having patterned electrodes and method of forming the same | 1 | 2005 | |
7427770 Memory array for increased bit density | 4 | 2005 | |
7269044 Method and apparatus for accessing a memory array | 1 | 2005 | |
7269079 Power circuits for reducing a number of power supply voltage taps required for sensing a resistive memory | 1 | 2005 | |
7326950 Memory device with switching glass layer | 11 | 2005 | |
7233520 Process for erasing chalcogenide variable resistance memory bits | 8 | 2005 | |
* 2007/0008,768 Process for erasing chalcogenide variable resistance memory bits | 2 | 2005 | |
7274034 Resistance variable memory device with sputtered metal-chalcogenide region and method of fabrication | 8 | 2005 | |
7317567 Method and apparatus for providing color changing thin film material | 8 | 2005 | |
7518212 concentration in PCRAM | 14 | 2005 | |
7579615 Access transistor for memory device | 6 | 2005 | |
* 2007/0034,921 Access transistor for memory device | 10 | 2005 | |
7304368 Chalcogenide-based electrokinetic memory element and method of forming the same | 8 | 2005 | |
7251154 Method and apparatus providing a cross-point memory array using a variable resistance memory cell and capacitance | 16 | 2005 | |
* 2007/0035,990 Method and apparatus providing a cross-point memory array using a variable resistance memory cell and capacitance | 17 | 2005 | |
7277313 Resistance variable memory element with threshold device and method of forming the same | 7 | 2005 | |
* 2007/0047,297 Resistance variable memory element with threshold device and method of forming the same | 0 | 2005 | |
7242603 Method of operating a complementary bit resistance memory sensor | 10 | 2005 | |
7294527 Method of forming a memory cell | 9 | 2005 | |
7550818 Method of manufacture of a PCRAM memory cell | 6 | 2006 | |
7396699 Method of forming non-volatile resistance variable devices and method of forming a programmable memory cell of memory circuitry | 7 | 2006 | |
* 2006/0270,099 Method of forming non-volatile resistance variable devices and method of forming a programmable memory cell of memory circuitry | 0 | 2006 | |
7723713 Layered resistance variable memory device and method of fabrication | 12 | 2006 | |
* 2007/0007,506 Layered resistance variable memory device and method of fabrication | 5 | 2006 | |
7190608 Sensing of resistance variable memory devices | 8 | 2006 | |
7459336 Method of forming a chalcogenide material containing device | 0 | 2006 | |
* 2006/0243,973 Thin film diode integrated with chalcogenide memory cell | 6 | 2006 | |
7348209 Resistance variable memory device and method of fabrication | 9 | 2006 | |
7700422 Methods of forming memory arrays for increased bit density | 0 | 2006 | |
7910397 Small electrode for resistance variable devices | 0 | 2006 | |
7663133 Memory elements having patterned electrodes and method of forming the same | 0 | 2006 | |
* 2007/0059,882 Memory elements having patterned electrodes and method of forming the same | 7 | 2006 | |
7289349 Resistance variable memory element with threshold device and method of forming the same | 9 | 2006 | |
7366045 Power circuits for reducing a number of power supply voltage taps required for sensing a resistive memory | 0 | 2006 | |
* 2007/0104,010 Power circuits for reducing a number of power supply voltage taps required for sensing a resistive memory | 5 | 2006 | |
7282783 Resistance variable memory device and method of fabrication | 11 | 2007 | |
7709885 Access transistor for memory device | 17 | 2007 | |
7994491 PCRAM device with switching glass layer | 4 | 2007 | |
7759665 PCRAM device with switching glass layer | 8 | 2007 | |
7643333 Process for erasing chalcogenide variable resistance memory bits | 1 | 2007 | |
7668000 Method and apparatus providing a cross-point memory array using a variable resistance memory cell and capacitance | 2 | 2007 | |
7433227 Resistance variable memory device with sputtered metal-chalcogenide region and method of fabrication | 9 | 2007 | |
8101936 SnSe-based limited reprogrammable cell | 0 | 2007 | |
7745808 Differential negative resistance memory | 9 | 2007 | |
7749853 Method of forming a variable resistance memory device comprising tin selenide | 8 | 2008 | |
7863597 Resistance variable memory devices with passivating material | 3 | 2008 | |
7879646 Assemblies displaying differential negative resistance, semiconductor constructions, and methods of forming assemblies displaying differential negative resistance | 4 | 2008 | |
7785976 Method of forming a memory device incorporating a resistance-variable chalcogenide element | 10 | 2008 | |
7869249 Complementary bit PCRAM sense amplifier and method of operation | 2 | 2008 | |
7551509 Power circuits for reducing a number of power supply voltage taps required for sensing a resistive memory | 1 | 2008 | |
7701760 Resistance variable memory device with sputtered metal-chalcogenide region and method of fabrication | 9 | 2008 | |
7791058 Enhanced memory density resistance variable memory cells, arrays, devices and systems including the same, and methods of fabrication | 10 | 2009 | |
7978500 Method and apparatus providing a cross-point memory array using a variable resistance memory cell and capacitance | 0 | 2010 | |
7968927 Memory array for increased bit density and method of forming the same | 0 | 2010 | |
7940556 Resistance variable memory device with sputtered metal-chalcogenide region and method of fabrication | 2 | 2010 | |
8652903 Access transistor for memory device | 0 | 2010 | |
8263958 Layered resistance variable memory device and method of fabrication | 3 | 2010 | |
8334186 Method of forming a memory device incorporating a resistance variable chalcogenide element | 1 | 2010 | |
8030636 Enhanced memory density resistance variable memory cells, arrays, devices and systems including the same, and methods of fabrication | 4 | 2010 | |
8189366 Method and apparatus providing a cross-point memory array using a variable resistance memory cell and capacitance | 1 | 2011 | |
8487288 Memory device incorporating a resistance variable chalcogenide element | 0 | 2011 | |
8611136 Method and apparatus providing a cross-point memory array using a variable resistance memory cell and capacitance | 1 | 2012 | |
8895401 Method of forming a memory device incorporating a resistance variable chalcogenide element | 1 | 2012 | |
9552986 Forming a memory device using sputtering to deposit silver-selenide film | 0 | 2014 | |
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7038231 Non-planarized, self-aligned, non-volatile phase-change memory array and method of formation | 6 | 2004 | |
* 2005/0242,338 Non-planarized, self-aligned, non-volatile phase-change memory array and method of formation | 2 | 2004 | |
7682866 Non-planarized, self-aligned, non-volatile phase-change memory array and method of formation | 1 | 2006 | |
* 2006/0145,134 Non-planarized, self-aligned, non-volatile phase-change memory array and method of formation | 2 | 2006 | |
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8467236 Continuously variable resistor | 1 | 2010 | |
* 2011/0037,558 CONTINUOUSLY VARIABLE RESISTOR | 1 | 2010 | |
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7515461 Current compliant sensing architecture for multilevel phase change memory | 59 | 2007 | |
* 2008/0165,570 Current Compliant Sensing Architecture for Multilevel Phase Change Memory | 98 | 2007 | |
8138028 Method for manufacturing a phase change memory device with pillar bottom electrode | 9 | 2007 | |
* 2008/0191,187 METHOD FOR MANUFACTURING A PHASE CHANGE MEMORY DEVICE WITH PILLAR BOTTOM ELECTRODE | 122 | 2007 | |
8030634 Memory array with diode driver and method for fabricating the same | 2 | 2008 | |
7825398 Memory cell having improved mechanical stability | 3 | 2008 | |
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* 2002/0116,955 Method of forming soot preform | 1 | 2002 | |
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* 2002/0168,852 PCRAM memory cell and method of making same | 26 | 2001 | |
* 7319057 Phase change material memory device | 6 | 2001 | |
* 2003/0082,908 Phase change material memory device | 2 | 2001 | |
6891749 Resistance variable ‘on ’ memory | 22 | 2002 | |
6809362 Multiple data state memory cell | 19 | 2002 | |
* 2003/0156,468 Resistance variable 'on' memory | 3 | 2002 | |
6937528 Variable resistance memory and method for sensing same | 23 | 2002 | |
* 2003/0169,625 Programmable conductor random access memory and method for sensing same | 66 | 2002 | |
6849868 Methods and apparatus for resistance variable material cells | 29 | 2002 | |
* 2003/0173,558 Methods and apparatus for resistance variable material cells | 2 | 2002 | |
6864500 Programmable conductor memory cell structure | 222 | 2002 | |
6855975 Thin film diode integrated with chalcogenide memory cell | 45 | 2002 | |
* 2003/0193,059 Programmable conductor memory cell structure and method therefor | 2 | 2002 | |
* 2003/0193,053 Thin film diode integrated with chalcogenide memory cell | 12 | 2002 | |
7010644 Software refreshed memory device and method | 10 | 2002 | |
6867996 Single-polarity programmable resistance-variable memory element | 49 | 2002 | |
6864521 Method to control silver concentration in a resistance variable memory element | 19 | 2002 | |
* 2004/0043,245 Method to control silver concentration in a resistance variable memory element | 1 | 2002 | |
6894304 Apparatus and method for dual cell common electrode PCRAM memory device | 131 | 2003 | |
* 6869841 Carbon-containing interfacial layer for phase-change memory | 11 | 2003 | |
6930909 Memory device and methods of controlling resistance variation and resistance profile drift | 46 | 2003 | |
* 2004/0264,234 PCRAM cell operation method to control on/off resistance variation | 17 | 2003 | |
6961277 Method of refreshing a PCRAM memory device | 26 | 2003 | |
7399655 Damascene conductive line for contacting an underlying memory element | 3 | 2003 | |
* 2005/0029,627 Damascene conductive line for contacting an underlying memory element | 4 | 2003 | |
7022555 Methods of forming a semiconductor memory device | 1 | 2004 | |
6949402 Method of forming a non-volatile resistance variable device | 1 | 2004 | |
7087454 Fabrication of single polarity programmable resistance structure | 29 | 2004 | |
6908808 Method of forming and storing data in a multiple state memory cell | 4 | 2004 | |
* 2004/0223,357 Multiple data state memory cell | 0 | 2004 | |
7365411 Resistance variable memory with temperature tolerant materials | 79 | 2004 | |
7223627 Memory element and its method of formation | 7 | 2004 | |
* 2005/0148,150 Memory element and its method of formation | 2 | 2004 | |
7112484 Thin film diode integrated with chalcogenide memory cell | 7 | 2004 | |
7202520 Multiple data state memory cell | 6 | 2005 | |
* 2005/0157,567 Multiple data state memory cell | 0 | 2005 | |
7385868 Method of refreshing a PCRAM memory device | 9 | 2005 | |
7332735 Phase change memory cell and method of formation | 32 | 2005 | |
7199444 Memory device, programmable resistance memory cell and memory array | 3 | 2005 | |
7307908 Software refreshed memory device and method | 5 | 2005 | |
7235419 Method of making a memory cell | 5 | 2005 | |
7547905 Programmable conductor memory cell structure and method therefor | 3 | 2006 | |
7393798 Resistance variable memory with temperature tolerant materials | 15 | 2006 | |
7366003 Method of operating a complementary bit resistance memory sensor and method of operation | 1 | 2006 | |
* 2006/0245,234 Method of operating a complementary bit resistance memory sensor and method of operation | 1 | 2006 | |
7692177 Resistance variable memory element and its method of formation | 7 | 2006 | |
7498231 Multiple data state memory cell | 0 | 2007 | |
* 2007/0128,792 Multiple data state memory cell | 3 | 2007 | |
7687793 Resistance variable memory cells | 49 | 2007 | |
* 2007/0235,712 RESISTANCE VARIABLE MEMORY CELLS | 9 | 2007 | |
7564731 Software refreshed memory device and method | 4 | 2007 | |
7663137 Phase change memory cell and method of formation | 17 | 2007 | |
* 2008/0142,773 PHASE CHANGE MEMORY CELL AND METHOD OF FORMATION | 10 | 2007 | |
7586777 Resistance variable memory with temperature tolerant materials | 10 | 2008 | |
7682992 Resistance variable memory with temperature tolerant materials | 7 | 2008 | |
* 7728352 Damascene conductive line for contacting an underlying memory element | 1 | 2008 | |
* 2008/0246,161 Damascene conductive line for contacting an underlying memory element | 2 | 2008 | |
7768861 Software refreshed memory device and method | 0 | 2009 | |
7924603 Resistance variable memory with temperature tolerant materials | 2 | 2010 | |
7944768 Software refreshed memory device and method | 0 | 2010 | |
* 8440535 Forming a phase change memory with an ovonic threshold switch | 0 | 2012 | |
* 2012/0220,099 Forming a Phase Change Memory With an Ovonic Threshold Switch | 5 | 2012 | |
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6867064 Method to alter chalcogenide glass for improved switching characteristics | 14 | 2002 | |
* 2003/0155,606 Method to alter chalcogenide glass for improved switching characteristics | 10 | 2002 | |
6890790 Co-sputter deposition of metal-doped chalcogenides | 13 | 2002 | |
6903361 Non-volatile memory structure | 36 | 2003 | |
* 2005/0056,910 NON-VOLATILE MEMORY STRUCTURE | 0 | 2003 | |
7153721 Resistance variable memory elements based on polarized silver-selenide network growth | 11 | 2004 | |
* 2005/0162,907 Resistance variable memory elements based on polarized silver-selenide network growth | 1 | 2004 | |
7583551 Power management control and controlling memory refresh operations | 6 | 2004 | |
* 2005/0201,174 Power management control and controlling memory refresh operations | 18 | 2004 | |
* 2004/0223,390 Resistance variable memory element having chalcogenide glass for improved switching characteristics | 7 | 2004 | |
7202104 Co-sputter deposition of metal-doped chalcogenides | 1 | 2004 | |
* 2004/0235,235 Co-sputter deposition of metal-doped chalcogenides | 0 | 2004 | |
6946347 Non-volatile memory structure | 11 | 2004 | |
* 2005/0059,187 Non-volatile memory structure | 0 | 2004 | |
7276722 Non-volatile memory structure | 7 | 2005 | |
7446393 Co-sputter deposition of metal-doped chalcogenides | 1 | 2007 | |
7491963 Non-volatile memory structure | 0 | 2007 | |
7964436 Co-sputter deposition of metal-doped chalcogenides | 0 | 2008 | |
8619485 Power management control and controlling memory refresh operations | 2 | 2009 | |
* 2009/0147,608 POWER MANAGEMENT CONTROL AND CONTROLLING MEMORY REFRESH OPERATIONS | 4 | 2009 | |
9142263 Power management control and controlling memory refresh operations | 1 | 2013 | |
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7385235 Spacer chalcogenide memory device | 95 | 2004 | |
7033856 Spacer chalcogenide memory method | 161 | 2004 | |
* 2005/0093,022 Spacer chalcogenide memory device | 22 | 2004 | |
* 2005/0062,074 Spacer chalcogenide memory method | 3 | 2004 | |
7220983 Self-aligned small contact phase-change memory method and device | 203 | 2004 | |
7514288 Manufacturing methods for thin film fuse phase change ram | 10 | 2005 | |
7321130 Thin film fuse phase change RAM and manufacturing method | 117 | 2005 | |
7238994 Thin film plate phase change ram circuit and manufacturing method | 121 | 2005 | |
* 2006/0284,279 Thin film fuse phase change RAM and manufacturing method | 38 | 2005 | |
* 2006/0286,709 Manufacturing methods for thin film fuse phase change ram | 225 | 2005 | |
* 2006/0284,157 Thin film plate phase change RAM circuit and manufacturing method | 34 | 2005 | |
7608503 Side wall active pin memory and manufacturing method | 20 | 2005 | |
* 2006/0108,667 Method for manufacturing a small pin on integrated circuits or other devices | 180 | 2005 | |
* 2006/0110,878 Side wall active pin memory and manufacturing method | 245 | 2005 | |
* 2007/0111,429 Method of manufacturing a pipe shaped phase change memory | 176 | 2006 | |
7507986 Thermal isolation for an active-sidewall phase change memory cell | 53 | 2006 | |
7432206 Self-aligned manufacturing method, and manufacturing method for thin film fuse phase change ram | 2 | 2006 | |
7394088 Thermally contained/insulated phase change memory device and method (combined) | 124 | 2006 | |
* 2007/0173,063 Self-aligned manufacturing method, and manufacturing method for thin film fuse phase change ram | 20 | 2006 | |
* 2007/0108,430 Thermally contained/insulated phase change memory device and method (combined) | 29 | 2006 | |
7956358 I-shaped phase change memory cell with thermal isolation | 3 | 2006 | |
7635855 I-shaped phase change memory cell | 9 | 2006 | |
* 2008/0043,520 I-shaped phase change memory cell with thermal isolation | 112 | 2006 | |
7825396 Self-align planerized bottom electrode phase change memory and manufacturing method | 0 | 2006 | |
* 2007/0158,645 Self-align planerized bottom electrode phase change memory and manufacturing method | 162 | 2006 | |
7471555 Thermally insulated phase change memory device | 5 | 2006 | |
* 2007/0109,836 Thermally insulated phase change memory device and manufacturing method | 22 | 2006 | |
7599217 Memory cell device and manufacturing method | 3 | 2006 | |
8062833 Chalcogenide layer etching method | 1 | 2006 | |
* 2007/0154,847 Chalcogenide layer etching method | 165 | 2006 | |
7910907 Manufacturing method for pipe-shaped electrode phase change memory | 3 | 2006 | |
7397060 Pipe shaped phase change memory | 117 | 2006 | |
* 2007/0108,429 Pipe shaped phase change memory | 22 | 2006 | |
7554144 Memory device and manufacturing method | 7 | 2006 | |
* 2007/0241,371 Memory device and manufacturing method | 4 | 2006 | |
7928421 Phase change memory cell with vacuum spacer | 10 | 2006 | |
7829876 Vacuum cell thermal isolation for a phase change memory device | 5 | 2006 | |
7479649 Vacuum jacketed electrode for phase change memory element | 67 | 2006 | |
7449710 Vacuum jacket for phase change memory element | 90 | 2006 | |
* 2007/0158,862 Vacuum jacketed electrode for phase change memory element | 162 | 2006 | |
* 2007/0131,980 Vacuum jacket for phase change memory element | 15 | 2006 | |
* 2007/0126,040 Vacuum cell thermal isolation for a phase change memory device | 167 | 2006 | |
7521364 Surface topology improvement method for plug surface areas | 0 | 2006 | |
7456421 Vertical side wall active pin structures in a phase change memory and manufacturing methods | 11 | 2006 | |
* 2007/0176,261 Vertical Side Wall Active Pin Structures in a Phase Change Memory and Manufacturing Methods | 63 | 2006 | |
8129706 Structures and methods of a bistable resistive random access memory | 10 | 2006 | |
* 2007/0257,300 Structures and Methods of a Bistable Resistive Random Access Memory | 144 | 2006 | |
7608848 Bridge resistance random access memory device with a singular contact structure | 94 | 2006 | |
* 2007/0262,388 Bridge Resistance Random Access Memory Device and Method With A Singular Contact Structure | 124 | 2006 | |
7605079 Manufacturing method for phase change RAM with electrode layer process | 13 | 2006 | |
7514367 Method for manufacturing a narrow structure on an integrated circuit | 2 | 2006 | |
* 2007/0155,172 Manufacturing Method for Phase Change RAM with Electrode Layer Process | 179 | 2006 | |
* 2006/0286,743 Method for Manufacturing a Narrow Structure on an Integrated Circuit | 165 | 2006 | |
7423300 Single-mask phase change memory element | 104 | 2006 | |
7820997 Resistor random access memory cell with reduced active area and reduced contact areas | 2 | 2006 | |
7732800 Resistor random access memory cell with L-shaped electrode | 4 | 2006 | |
* 2007/0278,529 RESISTOR RANDOM ACCESS MEMORY CELL WITH L-SHAPED ELECTRODE | 25 | 2006 | |
* 2007/0281,420 RESISTOR RANDOM ACCESS MEMORY CELL WITH REDUCED ACTIVE AREA AND REDUCED CONTACT AREAS | 18 | 2006 | |
7459717 Phase change memory cell and manufacturing method | 18 | 2006 | |
7414258 Spacer electrode small pin phase change memory RAM and manufacturing method | 2 | 2006 | |
* 2007/0121,363 Phase Change Memory Cell and Manufacturing Method | 37 | 2006 | |
8237140 Self-aligned, embedded phase change RAM | 7 | 2006 | |
* 2006/0284,158 SELF-ALIGNED, EMBEDDED PHASE CHANGE RAM AND MANUFACTURING METHOD | 179 | 2006 | |
7642539 Thin film fuse phase change cell with thermal isolation pad and manufacturing method | 4 | 2006 | |
* 2007/0131,922 Thin Film Fuse Phase Change Cell with Thermal Isolation Pad and Manufacturing Method | 163 | 2006 | |
7560337 Programmable resistive RAM and manufacturing method | 34 | 2006 | |
* 2007/0173,019 Programmable Resistive Ram and Manufacturing Method | 215 | 2006 | |
7696506 Memory cell with memory material insulation and manufacturing method | 23 | 2006 | |
7785920 Method for making a pillar-type phase change memory element | 3 | 2006 | |
* 2008/0014,676 Method for Making a Pillar-Type Phase Change Memory Element | 115 | 2006 | |
7741636 Programmable resistive RAM and manufacturing method | 5 | 2006 | |
* 2007/0161,186 Programmable Resistive RAM and Manufacturing Method | 176 | 2006 | |
7450411 Phase change memory device and manufacturing method | 4 | 2006 | |
7595218 Programmable resistive RAM and manufacturing method | 3 | 2006 | |
* 2007/0158,690 Programmable Resistive RAM and Manufacturing Method | 170 | 2006 | |
* 2007/0158,632 Method for Fabricating a Pillar-Shaped Phase Change Memory Element | 166 | 2006 | |
7531825 Method for forming self-aligned thermal isolation cell for a variable resistance memory array | 3 | 2006 | |
7442603 Self-aligned structure and method for confining a melting point in a resistor random access memory | 11 | 2006 | |
* 2008/0121,861 Self-Aligned Structure and Method for Confining a Melting Point in a Resistor Random Access Memory | 4 | 2006 | |
7598512 Thin film fuse phase change cell with thermal isolation layer and manufacturing method | 2 | 2006 | |
* 2006/0284,214 THIN FILM FUSE PHASE CHANGE CELL WITH THERMAL ISOLATION LAYER AND MANUFACTURING METHOD | 171 | 2006 | |
7772581 Memory device having wide area phase change element and small electrode contact area | 80 | 2006 | |
* 2008/0061,341 Memory Device Having Wide Area Phase Change Element and Small Electrode Contact Area | 26 | 2006 | |
7504653 Memory cell device with circumferentially-extending memory element | 35 | 2006 | |
7510929 Method for making memory cell device | 2 | 2006 | |
* 2008/0096,375 Method for Making Memory Cell Device | 5 | 2006 | |
7863655 Phase change memory cells with dual access devices | 1 | 2006 | |
7527985 Method for manufacturing a resistor random access memory with reduced active area and reduced contact areas | 5 | 2006 | |
7388771 Methods of operating a bistable resistance random access memory with multiple memory layers and multilevel memory states | 7 | 2006 | |
* 2008/0106,923 Phase Change Memory Cells with Dual Access Devices | 27 | 2006 | |
* 2008/0094,885 Bistable Resistance Random Access Memory Structures with Multiple Memory Layers and Multilevel Memory States | 6 | 2006 | |
* 2008/0096,341 Method for Manufacturing a Resistor Random Access Memory with Reduced Active Area and Reduced Contact Areas | 5 | 2006 | |
8067762 Resistance random access memory structure for enhanced retention | 5 | 2006 | |
* 2008/0116,440 Resistance Random Access Memory Structure for Enhanced Retention | 8 | 2006 | |
7816661 Air cell thermal isolation for a memory array formed of a programmable resistive material | 8 | 2006 | |
* 2008/0266,940 Air Cell Thermal Isolation for a Memory Array Formed of a Programmable Resistive Material | 14 | 2006 | |
7682868 Method for making a keyhole opening during the manufacture of a memory cell | 1 | 2006 | |
7476587 Method for making a self-converged memory material element for memory cell | 25 | 2006 | |
* 2008/0138,931 Method for Making a Self-Converged Void and Bottom Electrode for Memoery Cell | 53 | 2006 | |
* 2008/0138,929 Method for Making a Self-Converged Memory Material Element for Memory Cell | 74 | 2006 | |
7697316 Multi-level cell resistance random access memory with metal oxides | 88 | 2006 | |
* 2008/0135,824 Method and Structure of a Multi-Level Cell Resistance Random Access Memory with Metal Oxides | 15 | 2006 | |
7903447 Method, apparatus and computer program product for read before programming process on programmable resistive memory cell | 2 | 2006 | |
* 2008/0144,353 Method, Apparatus and Computer Program Product for Read Before Programming Process on Programmable Resistive Memory Cell | 4 | 2006 | |
8344347 Multi-layer electrode structure | 0 | 2006 | |
7688619 Phase change memory cell and manufacturing method | 99 | 2006 | |
7718989 Resistor random access memory cell device | 12 | 2006 | |
* 2008/0157,053 Resistor Random Access Memory Cell Device | 47 | 2006 | |
7786460 Phase change memory device and manufacturing method | 82 | 2007 | |
7440315 Method, apparatus and computer program product for stepped reset programming process on programmable resistive memory cell | 22 | 2007 | |
7433226 Method, apparatus and computer program product for read before programming process on multiple programmable resistive memory cell | 8 | 2007 | |
* 2007/0109,843 Phase Change Memory Device and Manufacturing Method | 162 | 2007 | |
7483292 Memory cell with separate read and program paths | 6 | 2007 | |
* 2008/0186,761 Memory Cell with Separate Read and Program Paths | 2 | 2007 | |
8008643 Phase change memory cell with heater and method for fabricating the same | 0 | 2007 | |
7619237 Programmable resistive memory cell with self-forming gap | 4 | 2007 | |
7534647 Damascene phase change RAM and manufacturing method | 7 | 2007 | |
* 2008/0197,334 Phase Change Memory Cell with Heater and Method for Fabricating the Same | 91 | 2007 | |
7956344 Memory cell with memory element contacting ring-shaped upper end of bottom electrode | 6 | 2007 | |
* 2008/0203,375 Memory Cell with Memory Element Contacting Ring-Shaped Upper End of Bottom Electrode | 3 | 2007 | |
7786461 Memory structure with reduced-size memory element between memory material portions | 15 | 2007 | |
8610098 Phase change memory bridge cell with diode isolation device | 0 | 2007 | |
7755076 self align side wall active phase change memory | 50 | 2007 | |
7569844 Memory cell sidewall contacting side electrode | 40 | 2007 | |
* 2008/0258,126 Memory Cell Sidewall Contacting Side Electrode | 45 | 2007 | |
7514334 Thin film plate phase change RAM circuit and manufacturing method | 62 | 2007 | |
7463512 Memory element with reduced-current phase change element | 23 | 2007 | |
* 2008/0192,534 MEMORY ELEMENT WITH REDUCED-CURRENT PHASE CHANGE ELEMENT | 23 | 2007 | |
7701759 Memory cell device and programming methods | 14 | 2007 | |
* 2008/0186,755 MEMORY CELL DEVICE AND PROGRAMMING METHODS | 90 | 2007 | |
8513637 4F2 self align fin bottom electrodes FET drive phase change memory | 3 | 2007 | |
7483316 Method and apparatus for refreshing programmable resistive memory | 1 | 2007 | |
* 2008/0266,933 Method and Apparatus for Refreshing Programmable Resistive Memory | 8 | 2007 | |
7884342 Phase change memory bridge cell | 1 | 2007 | |
* 2009/0032,796 PHASE CHANGE MEMORY BRIDGE CELL | 7 | 2007 | |
7729161 Phase change memory with dual word lines and source lines and method of operating same | 7 | 2007 | |
* 2009/0034,323 PHASE CHANGE MEMORY WITH DUAL WORD LINES AND SOURCE LINES AND METHOD OF OPERATING SAME | 10 | 2007 | |
9018615 Resistor random access memory structure having a defined small area of electrical contact | 0 | 2007 | |
7696503 Multi-level memory cell having phase change element and asymmetrical thermal boundary | 22 | 2007 | |
8178386 Phase change memory cell array with self-converged bottom electrode and method for manufacturing | 4 | 2007 | |
7642125 Phase change memory cell in via array with self-aligned, self-converged bottom electrode and method for manufacturing | 22 | 2007 | |
* 2009/0072,216 PHASE CHANGE MEMORY CELL ARRAY WITH SELF-CONVERGED BOTTOM ELECTRODE AND METHOD FOR MANUFACTURING | 14 | 2007 | |
* 2009/0072,215 PHASE CHANGE MEMORY CELL IN VIA ARRAY WITH SELF-ALIGNED, SELF-CONVERGED BOTTOM ELECTRODE AND METHOD FOR MANUFACTURING | 45 | 2007 | |
7663135 Memory cell having a side electrode contact | 5 | 2007 | |
7551473 Programmable resistive memory with diode structure | 21 | 2007 | |
7535756 Method to tighten set distribution for PCRAM | 14 | 2007 | |
7919766 Method for making self aligning pillar memory cell device | 21 | 2007 | |
7804083 Phase change memory cell including a thermal protect bottom electrode and manufacturing methods | 7 | 2007 | |
* 2009/0122,588 PHASE CHANGE MEMORY CELL INCLUDING A THERMAL PROTECT BOTTOM ELECTRODE AND MANUFACTURING METHODS | 8 | 2007 | |
7646631 Phase change memory cell having interface structures with essentially equal thermal impedances and manufacturing methods | 21 | 2007 | |
* 2009/0147,564 PHASE CHANGE MEMORY CELL HAVING INTERFACE STRUCTURES WITH ESSENTIALLY EQUAL THERMAL IMPEDANCES AND MANUFACTURING METHODS | 24 | 2007 | |
7579613 Thin film fuse phase change RAM and manufacturing method | 22 | 2007 | |
7639527 Phase change memory dynamic resistance test and manufacturing methods | 4 | 2008 | |
7884343 Phase change memory cell with filled sidewall memory element and method for fabricating the same | 11 | 2008 | |
7879643 Memory cell with memory element contacting an inverted T-shaped bottom electrode | 3 | 2008 | |
* 2008/0191,186 PHASE CHANGE MEMORY CELL WITH FILLED SIDEWALL MEMORY ELEMENT AND METHOD FOR FABRICATING THE SAME | 7 | 2008 | |
7879645 Fill-in etching free pore device | 14 | 2008 | |
* 2009/0189,138 FILL-IN ETCHING FREE PORE DEVICE | 8 | 2008 | |
7619311 Memory cell device with coplanar electrode surface and method | 14 | 2008 | |
* 2008/0185,730 MEMORY CELL DEVICE WITH COPLANAR ELECTRODE SURFACE AND METHOD | 9 | 2008 | |
8158965 Heating center PCRAM structure and methods for making | 2 | 2008 | |
7932101 Thermally contained/insulated phase change memory device and method | 7 | 2008 | |
* 2008/0166,875 THERMALLY CONTAINED/INSULATED PHASE CHANGE MEMORY DEVICE AND METHOD (COMBINED) | 89 | 2008 | |
8084842 Thermally stabilized electrode structure | 5 | 2008 | |
* 2009/0242,880 THERMALLY STABILIZED ELECTRODE STRUCTURE | 2 | 2008 | |
7791057 Memory cell having a buried phase change region and method for fabricating the same | 13 | 2008 | |
* 2009/0261,313 MEMORY CELL HAVING A BURIED PHASE CHANGE REGION AND METHOD FOR FABRICATING THE SAME | 16 | 2008 | |
7701750 Phase change device having two or more substantial amorphous regions in high resistance state | 14 | 2008 | |
7586778 Methods of operating a bistable resistance random access memory with multiple memory layers and multilevel memory states | 82 | 2008 | |
8415651 Phase change memory cell having top and bottom sidewall contacts | 4 | 2008 | |
* 2009/0309,087 PHASE CHANGE MEMORY CELL HAVING TOP AND BOTTOM SIDEWALL CONTACTS | 18 | 2008 | |
7642123 Thermally insulated phase change memory manufacturing method | 4 | 2008 | |
* 2008/0268,565 THERMALLY INSULATED PHASE CHANGE MEMORY MANUFACTURING METHOD | 4 | 2008 | |
7867815 Spacer electrode small pin phase change RAM and manufacturing method | 2 | 2008 | |
7777215 Resistive memory structure with buffer layer | 44 | 2008 | |
7932506 Fully self-aligned pore-type memory cell having diode access device | 4 | 2008 | |
* 2010/0019,215 MUSHROOM TYPE MEMORY CELL HAVING SELF-ALIGNED BOTTOM ELECTRODE AND DIODE ACCESS DEVICE | 17 | 2008 | |
7903457 Multiple phase change materials in an integrated circuit for system on a chip application | 8 | 2008 | |
* 2010/0046,285 MULTIPLE PHASE CHANGE MATERIALS IN AN INTEGRATED CIRCUIT FOR SYSTEM ON A CHIP APPLICATION | 15 | 2008 | |
7842536 Vacuum jacket for phase change memory element | 1 | 2008 | |
* 2009/0023,242 VACUUM JACKET FOR PHASE CHANGE MEMORY ELEMENT | 61 | 2008 | |
7719913 Sensing circuit for PCRAM applications | 4 | 2008 | |
8243494 Self-aligned structure and method for confining a melting point in a resistor random access memory | 0 | 2008 | |
8324605 Dielectric mesh isolated phase change structure for phase change memory | 4 | 2008 | |
7897954 Dielectric-sandwiched pillar memory device | 0 | 2008 | |
7932129 Vertical side wall active pin structures in a phase change memory and manufacturing methods | 3 | 2008 | |
* 2009/0042,335 VERTICAL SIDE WALL ACTIVE PIN STRUCTURES IN A PHASE CHANGE MEMORY AND MANUFACTURING METHODS | 62 | 2008 | |
8036014 Phase change memory program method without over-reset | 14 | 2008 | |
7902538 Phase change memory cell with first and second transition temperature portions | 2 | 2008 | |
* 2010/0110,778 PHASE CHANGE MEMORY PROGRAM METHOD WITHOUT OVER-RESET | 2 | 2008 | |
8907316 Memory cell access device having a pn-junction with polycrystalline and single crystal semiconductor regions | 1 | 2008 | |
8664689 Memory cell access device having a pn-junction with polycrystalline plug and single-crystal semiconductor regions | 0 | 2008 | |
* 2010/0117,048 MEMORY CELL ACCESS DEVICE HAVING A PN-JUNCTION WITH POLYCRYSTALLINE AND SINGLE-CRYSTAL SEMICONDUCTOR REGIONS | 6 | 2008 | |
7638359 Method for making a self-converged void and bottom electrode for memory cell | 6 | 2008 | |
* 2009/0104,771 METHOD FOR MAKING A SELF-CONVERGED VOID AND BOTTOM ELECTRODE FOR MEMORY CELL | 11 | 2008 | |
7749854 Method for making a self-converged memory material element for memory cell | 1 | 2008 | |
7687307 Vacuum jacketed electrode for phase change memory element | 1 | 2008 | |
* 2009/0098,716 METHOD FOR MAKING A SELF-CONVERGED MEMORY MATERIAL ELEMENT FOR MEMORY CELL | 9 | 2008 | |
* 2009/0098,678 VACUUM JACKETED ELECTRODE FOR PHASE CHANGE MEMORY ELEMENT | 44 | 2008 | |
7869270 Set algorithm for phase change memory cell | 5 | 2008 | |
8089137 Integrated circuit memory with single crystal silicon on silicide driver and manufacturing method | 78 | 2009 | |
* 2010/0171,086 INTEGRATED CIRCUIT MEMORY WITH SINGLE CRYSTAL SILICON ON SILICIDE DRIVER AND MANUFACTURING METHOD | 109 | 2009 | |
7923285 Method for forming self-aligned thermal isolation cell for a variable resistance memory array | 11 | 2009 | |
* 2009/0148,981 METHOD FOR FORMING SELF-ALIGNED THERMAL ISOLATION CELL FOR A VARIABLE RESISTANCE MEMORY ARRAY | 22 | 2009 | |
8107283 Method for setting PCRAM devices | 4 | 2009 | |
8030635 Polysilicon plug bipolar transistor for phase change memory | 2 | 2009 | |
8933536 Polysilicon pillar bipolar transistor with self-aligned memory element | 4 | 2009 | |
7910906 Memory cell device with circumferentially-extending memory element | 1 | 2009 | |
8084760 Ring-shaped electrode and manufacturing method for same | 7 | 2009 | |
8173987 Integrated circuit 3D phase change memory array and manufacturing method | 28 | 2009 | |
8077505 Bipolar switching of phase change device | 2 | 2009 | |
8097871 Low operational current phase change memory structures | 1 | 2009 | |
8134857 Methods for high speed reading operation of phase change memory and device employing same | 1 | 2009 | |
7933139 One-transistor, one-resistor, one-capacitor phase change memory | 31 | 2009 | |
7972893 Memory device manufacturing method | 1 | 2009 | |
8350316 Phase change memory cells having vertical channel access transistor and memory plane | 4 | 2009 | |
7968876 Phase change memory cell having vertical channel access transistor | 10 | 2009 | |
8158963 Programmable resistive RAM and manufacturing method | 1 | 2009 | |
* 2009/0236,743 Programmable Resistive RAM and Manufacturing Method | 1 | 2009 | |
8809829 Phase change memory having stabilized microstructure and manufacturing method | 1 | 2009 | |
8406033 Memory device and method for sensing and fixing margin cells | 6 | 2009 | |
8064247 Rewritable memory device based on segregation/re-absorption | 3 | 2009 | |
8110822 Thermal protect PCRAM structure and methods for making | 21 | 2009 | |
7894254 Refresh circuitry for phase change memory | 5 | 2009 | |
7924600 Methods of operating a bistable resistance random access memory with multiple memory layers and multilevel memory states | 4 | 2009 | |
8198619 Phase change memory cell structure | 2 | 2009 | |
8064248 2T2R-1T1R mix mode phase change memory array | 5 | 2009 | |
8110429 Bridge resistance random access memory device and method with a singular contact structure | 0 | 2009 | |
7879692 Programmable resistive memory cell with self-forming gap | 1 | 2009 | |
* 2010/0029,062 PROGRAMMABLE RESISTIVE MEMORY CELL WITH SELF-FORMING GAP | 7 | 2009 | |
7972895 Memory cell device with coplanar electrode surface and method | 2 | 2009 | |
* 2010/0029,042 MEMORY CELL DEVICE WITH COPLANAR ELECTRODE SURFACE AND METHOD | 2 | 2009 | |
7993962 I-shaped phase change memory cell | 3 | 2009 | |
8143612 Phase change memory cell in via array with self-aligned, self-converged bottom electrode and method for manufacturing | 2 | 2009 | |
* 2010/0065,808 PHASE CHANGE MEMORY CELL IN VIA ARRAY WITH SELF-ALIGNED, SELF-CONVERGED BOTTOM ELECTRODE AND METHOD FOR MANUFACTURING | 5 | 2009 | |
8062923 Thin film fuse phase change cell with thermal isolation pad and manufacturing method | 3 | 2009 | |
7893418 Phase change memory cell having interface structures with essentially equal thermal impedances and manufacturing methods | 1 | 2009 | |
* 2010/0072,447 PHASE CHANGE MEMORY CELL HAVING INTERFACE STRUCTURES WITH ESSENTIALLY EQUAL THERMAL IMPEDANCES AND MANUFACTURING METHODS | 19 | 2009 | |
7964863 Memory cell having a side electrode contact | 2 | 2009 | |
7929340 Phase change memory cell and manufacturing method | 6 | 2010 | |
7964468 Multi-level memory cell having phase change element and asymmetrical thermal boundary | 4 | 2010 | |
* 2010/0151,652 MULTI-LEVEL MEMORY CELL HAVING PHASE CHANGE ELEMENT AND ASYMMETRICAL THERMAL BOUNDARY | 32 | 2010 | |
8238149 Methods and apparatus for reducing defect bits in phase change memory | 5 | 2010 | |
8111541 Method of a multi-level cell resistance random access memory with metal oxides | 5 | 2010 | |
7920415 Memory cell device and programming methods | 0 | 2010 | |
* 2010/0216,279 METHOD OF A MULTI-LEVEL CELL RESISTANCE RANDOM ACCESS MEMORY WITH METAL OXIDES | 6 | 2010 | |
* 2010/0157,665 MEMORY CELL DEVICE AND PROGRAMMING METHODS | 9 | 2010 | |
8059449 Phase change device having two or more substantial amorphous regions in high resistance state | 1 | 2010 | |
8363463 Phase change memory having one or more non-constant doping profiles | 4 | 2010 | |
8178387 Methods for reducing recrystallization time for a phase change material | 6 | 2010 | |
8178405 Resistor random access memory cell device | 3 | 2010 | |
7978509 Phase change memory with dual word lines and source lines and method of operating same | 3 | 2010 | |
8080440 Resistor random access memory cell with L-shaped electrode | 6 | 2010 | |
* 2010/0207,095 RESISTOR RANDOM ACCESS MEMORY CELL WITH L-SHAPED ELECTRODE | 16 | 2010 | |
8178388 Programmable resistive RAM and manufacturing method | 5 | 2010 | |
8729521 Self aligned fin-type programmable memory cell | 5 | 2010 | |
8237148 self align side wall active phase change memory | 1 | 2010 | |
* 2010/0237,316 4F2 SELF ALIGN SIDE WALL ACTIVE PHASE CHANGE MEMORY | 6 | 2010 | |
8310864 Self-aligned bit line under word line memory array | 5 | 2010 | |
7964437 Memory device having wide area phase change element and small electrode contact area | 4 | 2010 | |
7943920 Resistive memory structure with buffer layer | 5 | 2010 | |
* 2010/0276,658 Resistive Memory Structure with Buffer Layer | 4 | 2010 | |
8008114 Phase change memory device and manufacturing method | 1 | 2010 | |
* 2010/0291,747 Phase Change Memory Device and Manufacturing Method | 30 | 2010 | |
7875493 Memory structure with reduced-size memory element between memory material portions | 7 | 2010 | |
8039392 Resistor random access memory cell with reduced active area and reduced contact areas | 3 | 2010 | |
8395935 Cross-point self-aligned reduced cell size phase change memory | 10 | 2010 | |
8143089 Self-align planerized bottom electrode phase change memory and manufacturing method | 3 | 2010 | |
8097487 Method for making a phase change memory device with vacuum cell thermal isolation | 3 | 2010 | |
* 2011/0034,003 Vacuum Cell Thermal Isolation for a Phase Change Memory Device | 25 | 2010 | |
8110430 Vacuum jacket for phase change memory element | 2 | 2010 | |
8497705 Phase change device for interconnection of programmable logic device | 0 | 2010 | |
8467238 Dynamic pulse operation for phase change memory | 2 | 2010 | |
8110456 Method for making a self aligning memory device | 1 | 2010 | |
8094488 Set algorithm for phase change memory cell | 4 | 2010 | |
* 2011/0075,475 SET ALGORITHM FOR PHASE CHANGE MEMORY CELL | 2 | 2010 | |
8263960 Phase change memory cell with filled sidewall memory element and method for fabricating the same | 1 | 2010 | |
* 2011/0133,150 Phase Change Memory Cell with Filled Sidewall Memory Element and Method for Fabricating the Same | 4 | 2010 | |
8315088 Multiple phase change materials in an integrated circuit for system on a chip application | 1 | 2011 | |
8228721 Refresh circuitry for phase change memory | 3 | 2011 | |
8912515 Manufacturing method for pipe-shaped electrode phase change memory | 0 | 2011 | |
* 2011/0163,288 Manufacturing Method for Pipe-Shaped Electrode Phase Change Memory | 2 | 2011 | |
8222071 Method for making self aligning pillar memory cell device | 0 | 2011 | |
8313979 Phase change memory cell having vertical channel access transistor | 1 | 2011 | |
* 2011/0217,818 PHASE CHANGE MEMORY CELL HAVING VERTICAL CHANNEL ACCESS TRANSISTOR | 7 | 2011 | |
8324681 Stacked non-volatile memory device and methods for fabricating the same | 1 | 2011 | |
8237144 Polysilicon plug bipolar transistor for phase change memory | 1 | 2011 | |
8587983 Resistance random access memory structure for enhanced retention | 3 | 2011 | |
8987700 Thermally confined electrode for programmable resistance memory | 2 | 2011 | |
8293600 Thermally stabilized electrode structure | 1 | 2011 | |
8916845 Low operational current phase change memory structures | 0 | 2011 | |
8779408 Phase change memory cell structure | 2 | 2012 | |
8860111 Phase change memory cell array with self-converged bottom electrode and method for manufacturing | 0 | 2012 | |
8624236 Phase change memory cell having vertical channel access transistor | 2 | 2012 | |
9076964 Methods for forming resistance random access memory structure | 0 | 2013 | |
9559113 SSL/GSL gate oxide in 3D vertical channel NAND | 0 | 2014 | |
8853047 Self aligned fin-type programmable memory cell | 0 | 2014 | |
9159412 Staggered write and verify for phase change memory | 2 | 2014 | |
9336879 Multiple phase change materials in an integrated circuit for system on a chip application | 0 | 2015 | |
9672906 Phase change memory with inter-granular switching | 0 | 2016 | |
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* 7242019 Shunted phase change memory | 7 | 2002 | |
* 6707712 Method for reading a structural phase-change memory | 201 | 2003 | |
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9029823 Phase change memory devices and methods comprising gallium, lanthanide and chalcogenide compounds | 1 | 2013 | |
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* 2007/0290,185 Phase change memory cells and methods for fabricating the same | 3 | 2006 | |
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8624215 Phase change memory devices and methods comprising gallium, lanthanide and chalcogenide compounds | 4 | 2006 |
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