US Patent No: 6,567,293
Number of patents in Portfolio can not be more than 2000
Single level metal memory cell using chalcogenide cladding
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May 20, 2003
Issued date -
Sep 29, 2000
filing date -
09/675,285
serial no -
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Abstract
An apparatus including a volume of phase change material disposed between a first conductor and a second conductor on a substrate, and a plurality of electrodes coupled to the volume of phase change material and the first conductor. A method including introducing, over a first conductor on a substrate, a plurality of electrodes coupled to the first conductor, introducing a phase change material over the plurality of electrodes and in electrical communication with the plurality of electrodes, and introducing a second conductor over the phase change material and coupled to the phase change material.
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First Claim
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- 15 United States
- 10 France
- 8 Japan
- 7 China
- 5 Korea
- 2 Other
Patent Owner(s)
| Patent Owner | Address | Total Patents |
|---|---|---|
| OVONYX, INC. | BOISE, ID | 298 |
International Classification(s)
Inventor(s)
| Inventor Name | Address | # of filed Patents | Total Citations |
|---|---|---|---|
| Gill, Manzur | Cupertino, CA | 82 | 2452 |
| Lowrey, Tyler A | San Jose, CA | 250 | 9988 |
Cited Art Landscape
| Patent Info | (Count) | # Cites | Year |
|---|---|---|---|
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| 5,789,758 Chalcogenide memory cell with a plurality of chalcogenide electrodes | 348 | 1995 | |
| 5,879,955 Method for fabricating an array of ultra-small pores for chalcogenide memory cells | 270 | 1995 | |
| 5,998,244 Memory cell incorporating a chalcogenide element and method of making same | 299 | 1996 | |
| 6,002,140 Method for fabricating an array of ultra-small pores for chalcogenide memory cells | 44 | 1997 | |
| 6,031,287 Contact structure and memory element incorporating the same | 452 | 1997 | |
| 5,970,336 Method of making memory cell incorporating a chalcogenide element | 275 | 1997 | |
| 5,920,788 Chalcogenide memory cell with a plurality of chalcogenide electrodes | 479 | 1997 | |
| 6,229,157 Method of forming a polysilicon diode and devices incorporating such diode | 47 | 1999 | |
| 6,153,890 Memory cell incorporating a chalcogenide element | 256 | 1999 | |
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| 5,296,716 Electrically erasable, directly overwritable, multibit single cell memory elements and arrays fabricated therefrom | 457 | 1991 | |
| * 5,825,046 Composite memory material comprising a mixture of phase-change memory material and dielectric material | 337 | 1996 | |
| 5,933,365 Memory element with energy control mechanism | 396 | 1997 | |
| 6,087,674 Memory element with memory material comprising phase-change material and dielectric material | 533 | 1998 | |
| 6,339,544 Method to enhance performance of thermal resistor device | 403 | 2000 | |
* Cited By Examiner
Patent Citation Ranking
Forward Cite Landscape
| Patent Info | (Count) | # Cites | Year |
|---|---|---|---|
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| 7,385,235 Spacer chalcogenide memory device | 91 | 2004 | |
| 7,033,856 Spacer chalcogenide memory method | 154 | 2004 | |
| 7,220,983 Self-aligned small contact phase-change memory method and device | 185 | 2004 | |
| 7,514,288 Manufacturing methods for thin film fuse phase change ram | 5 | 2005 | |
| 7,321,130 Thin film fuse phase change RAM and manufacturing method | 110 | 2005 | |
| 7,238,994 Thin film plate phase change ram circuit and manufacturing method | 99 | 2005 | |
| 7,608,503 Side wall active pin memory and manufacturing method | 13 | 2005 | |
| 7,507,986 Thermal isolation for an active-sidewall phase change memory cell | 50 | 2006 | |
| 7,432,206 Self-aligned manufacturing method, and manufacturing method for thin film fuse phase change ram | 2 | 2006 | |
| 7,394,088 Thermally contained/insulated phase change memory device and method (combined) | 109 | 2006 | |
| 7,956,358 I-shaped phase change memory cell with thermal isolation | 2 | 2006 | |
| 7,635,855 I-shaped phase change memory cell | 9 | 2006 | |
| 7,825,396 Self-align planerized bottom electrode phase change memory and manufacturing method | 0 | 2006 | |
| 7,471,555 Thermally insulated phase change memory device | 4 | 2006 | |
| 7,599,217 Memory cell device and manufacturing method | 3 | 2006 | |
| 8,062,833 Chalcogenide layer etching method | 0 | 2006 | |
| 7,910,907 Manufacturing method for pipe-shaped electrode phase change memory | 2 | 2006 | |
| 7,397,060 Pipe shaped phase change memory | 101 | 2006 | |
| 7,554,144 Memory device and manufacturing method | 6 | 2006 | |
| 7,928,421 Phase change memory cell with vacuum spacer | 6 | 2006 | |
| 7,829,876 Vacuum cell thermal isolation for a phase change memory device | 5 | 2006 | |
| 7,479,649 Vacuum jacketed electrode for phase change memory element | 65 | 2006 | |
| 7,449,710 Vacuum jacket for phase change memory element | 87 | 2006 | |
| 7,521,364 Surface topology improvement method for plug surface areas | 0 | 2006 | |
| 7,456,421 Vertical side wall active pin structures in a phase change memory and manufacturing methods | 7 | 2006 | |
| 8,129,706 Structures and methods of a bistable resistive random access memory | 7 | 2006 | |
| 7,608,848 Bridge resistance random access memory device with a singular contact structure | 62 | 2006 | |
| 7,605,079 Manufacturing method for phase change RAM with electrode layer process | 7 | 2006 | |
| 7,514,367 Method for manufacturing a narrow structure on an integrated circuit | 0 | 2006 | |
| 7,423,300 Single-mask phase change memory element | 98 | 2006 | |
| 7,820,997 Resistor random access memory cell with reduced active area and reduced contact areas | 0 | 2006 | |
| 7,732,800 Resistor random access memory cell with L-shaped electrode | 0 | 2006 | |
| 7,459,717 Phase change memory cell and manufacturing method | 15 | 2006 | |
| 7,414,258 Spacer electrode small pin phase change memory RAM and manufacturing method | 2 | 2006 | |
| 8,237,140 Self-aligned, embedded phase change RAM | 0 | 2006 | |
| 7,642,539 Thin film fuse phase change cell with thermal isolation pad and manufacturing method | 1 | 2006 | |
| 7,560,337 Programmable resistive RAM and manufacturing method | 24 | 2006 | |
| 7,696,506 Memory cell with memory material insulation and manufacturing method | 4 | 2006 | |
| 7,785,920 Method for making a pillar-type phase change memory element | 2 | 2006 | |
| 7,741,636 Programmable resistive RAM and manufacturing method | 2 | 2006 | |
| 7,450,411 Phase change memory device and manufacturing method | 3 | 2006 | |
| 7,595,218 Programmable resistive RAM and manufacturing method | 2 | 2006 | |
| 7,531,825 Method for forming self-aligned thermal isolation cell for a variable resistance memory array | 2 | 2006 | |
| 7,442,603 Self-aligned structure and method for confining a melting point in a resistor random access memory | 7 | 2006 | |
| 7,598,512 Thin film fuse phase change cell with thermal isolation layer and manufacturing method | 2 | 2006 | |
| 7,772,581 Memory device having wide area phase change element and small electrode contact area | 32 | 2006 | |
| 7,504,653 Memory cell device with circumferentially-extending memory element | 23 | 2006 | |
| 7,510,929 Method for making memory cell device | 2 | 2006 | |
| 7,863,655 Phase change memory cells with dual access devices | 1 | 2006 | |
| 7,527,985 Method for manufacturing a resistor random access memory with reduced active area and reduced contact areas | 1 | 2006 | |
| 7,388,771 Methods of operating a bistable resistance random access memory with multiple memory layers and multilevel memory states | 4 | 2006 | |
| 8,067,762 Resistance random access memory structure for enhanced retention | 2 | 2006 | |
| 7,816,661 Air cell thermal isolation for a memory array formed of a programmable resistive material | 1 | 2006 | |
| 7,682,868 Method for making a keyhole opening during the manufacture of a memory cell | 0 | 2006 | |
| 7,476,587 Method for making a self-converged memory material element for memory cell | 20 | 2006 | |
| 7,697,316 Multi-level cell resistance random access memory with metal oxides | 55 | 2006 | |
| 7,903,447 Method, apparatus and computer program product for read before programming process on programmable resistive memory cell | 2 | 2006 | |
| 8,344,347 Multi-layer electrode structure | 0 | 2006 | |
| 7,688,619 Phase change memory cell and manufacturing method | 67 | 2006 | |
| 7,718,989 Resistor random access memory cell device | 5 | 2006 | |
| 7,786,460 Phase change memory device and manufacturing method | 52 | 2007 | |
| 7,440,315 Method, apparatus and computer program product for stepped reset programming process on programmable resistive memory cell | 13 | 2007 | |
| 7,433,226 Method, apparatus and computer program product for read before programming process on multiple programmable resistive memory cell | 8 | 2007 | |
| 7,483,292 Memory cell with separate read and program paths | 5 | 2007 | |
| 8,008,643 Phase change memory cell with heater and method for fabricating the same | 0 | 2007 | |
| 7,619,237 Programmable resistive memory cell with self-forming gap | 3 | 2007 | |
| 7,534,647 Damascene phase change RAM and manufacturing method | 2 | 2007 | |
| 7,956,344 Memory cell with memory element contacting ring-shaped upper end of bottom electrode | 3 | 2007 | |
| 7,786,461 Memory structure with reduced-size memory element between memory material portions | 8 | 2007 | |
| 8,610,098 Phase change memory bridge cell with diode isolation device | 0 | 2007 | |
| 7,755,076 self align side wall active phase change memory | 23 | 2007 | |
| 7,569,844 Memory cell sidewall contacting side electrode | 31 | 2007 | |
| 7,514,334 Thin film plate phase change RAM circuit and manufacturing method | 56 | 2007 | |
| 7,463,512 Memory element with reduced-current phase change element | 14 | 2007 | |
| 7,701,759 Memory cell device and programming methods | 12 | 2007 | |
| 8,513,637 4F2 self align fin bottom electrodes FET drive phase change memory | 0 | 2007 | |
| 7,483,316 Method and apparatus for refreshing programmable resistive memory | 1 | 2007 | |
| 7,884,342 Phase change memory bridge cell | 0 | 2007 | |
| 7,729,161 Phase change memory with dual word lines and source lines and method of operating same | 7 | 2007 | |
| 7,696,503 Multi-level memory cell having phase change element and asymmetrical thermal boundary | 16 | 2007 | |
| 8,178,386 Phase change memory cell array with self-converged bottom electrode and method for manufacturing | 4 | 2007 | |
| 7,642,125 Phase change memory cell in via array with self-aligned, self-converged bottom electrode and method for manufacturing | 14 | 2007 | |
| 7,663,135 Memory cell having a side electrode contact | 5 | 2007 | |
| 7,551,473 Programmable resistive memory with diode structure | 17 | 2007 | |
| 7,535,756 Method to tighten set distribution for PCRAM | 10 | 2007 | |
| 7,919,766 Method for making self aligning pillar memory cell device | 3 | 2007 | |
| 7,804,083 Phase change memory cell including a thermal protect bottom electrode and manufacturing methods | 1 | 2007 | |
| 7,646,631 Phase change memory cell having interface structures with essentially equal thermal impedances and manufacturing methods | 3 | 2007 | |
| 7,579,613 Thin film fuse phase change RAM and manufacturing method | 13 | 2007 | |
| 7,639,527 Phase change memory dynamic resistance test and manufacturing methods | 3 | 2008 | |
| 7,884,343 Phase change memory cell with filled sidewall memory element and method for fabricating the same | 5 | 2008 | |
| 7,879,643 Memory cell with memory element contacting an inverted T-shaped bottom electrode | 2 | 2008 | |
| 7,879,645 Fill-in etching free pore device | 11 | 2008 | |
| 7,619,311 Memory cell device with coplanar electrode surface and method | 12 | 2008 | |
| 8,158,965 Heating center PCRAM structure and methods for making | 1 | 2008 | |
| 7,932,101 Thermally contained/insulated phase change memory device and method | 2 | 2008 | |
| 8,084,842 Thermally stabilized electrode structure | 1 | 2008 | |
| 7,791,057 Memory cell having a buried phase change region and method for fabricating the same | 9 | 2008 | |
| 7,701,750 Phase change device having two or more substantial amorphous regions in high resistance state | 13 | 2008 | |
| 7,586,778 Methods of operating a bistable resistance random access memory with multiple memory layers and multilevel memory states | 51 | 2008 | |
| 8,415,651 Phase change memory cell having top and bottom sidewall contacts | 1 | 2008 | |
| 7,642,123 Thermally insulated phase change memory manufacturing method | 3 | 2008 | |
| 7,867,815 Spacer electrode small pin phase change RAM and manufacturing method | 0 | 2008 | |
| 7,777,215 Resistive memory structure with buffer layer | 21 | 2008 | |
| 7,932,506 Fully self-aligned pore-type memory cell having diode access device | 2 | 2008 | |
| 7,903,457 Multiple phase change materials in an integrated circuit for system on a chip application | 5 | 2008 | |
| 7,842,536 Vacuum jacket for phase change memory element | 1 | 2008 | |
| 7,719,913 Sensing circuit for PCRAM applications | 1 | 2008 | |
| 8,243,494 Self-aligned structure and method for confining a melting point in a resistor random access memory | 0 | 2008 | |
| 8,324,605 Dielectric mesh isolated phase change structure for phase change memory | 2 | 2008 | |
| 7,897,954 Dielectric-sandwiched pillar memory device | 0 | 2008 | |
| 7,932,129 Vertical side wall active pin structures in a phase change memory and manufacturing methods | 0 | 2008 | |
| 8,036,014 Phase change memory program method without over-reset | 5 | 2008 | |
| 7,902,538 Phase change memory cell with first and second transition temperature portions | 2 | 2008 | |
| 8,907,316 Memory cell access device having a pn-junction with polycrystalline and single crystal semiconductor regions | 0 | 2008 | |
| 8,664,689 Memory cell access device having a pn-junction with polycrystalline plug and single-crystal semiconductor regions | 0 | 2008 | |
| 7,638,359 Method for making a self-converged void and bottom electrode for memory cell | 4 | 2008 | |
| 7,749,854 Method for making a self-converged memory material element for memory cell | 0 | 2008 | |
| 7,687,307 Vacuum jacketed electrode for phase change memory element | 0 | 2008 | |
| 7,869,270 Set algorithm for phase change memory cell | 3 | 2008 | |
| 8,089,137 Integrated circuit memory with single crystal silicon on silicide driver and manufacturing method | 26 | 2009 | |
| 7,923,285 Method for forming self-aligned thermal isolation cell for a variable resistance memory array | 3 | 2009 | |
| 8,107,283 Method for setting PCRAM devices | 3 | 2009 | |
| 8,030,635 Polysilicon plug bipolar transistor for phase change memory | 2 | 2009 | |
| 8,933,536 Polysilicon pillar bipolar transistor with self-aligned memory element | 0 | 2009 | |
| 7,910,906 Memory cell device with circumferentially-extending memory element | 0 | 2009 | |
| 8,084,760 Ring-shaped electrode and manufacturing method for same | 3 | 2009 | |
| 8,173,987 Integrated circuit 3D phase change memory array and manufacturing method | 6 | 2009 | |
| 8,077,505 Bipolar switching of phase change device | 1 | 2009 | |
| 8,097,871 Low operational current phase change memory structures | 1 | 2009 | |
| 8,134,857 Methods for high speed reading operation of phase change memory and device employing same | 1 | 2009 | |
| 7,933,139 One-transistor, one-resistor, one-capacitor phase change memory | 7 | 2009 | |
| 7,972,893 Memory device manufacturing method | 0 | 2009 | |
| 8,350,316 Phase change memory cells having vertical channel access transistor and memory plane | 0 | 2009 | |
| 7,968,876 Phase change memory cell having vertical channel access transistor | 3 | 2009 | |
| 8,158,963 Programmable resistive RAM and manufacturing method | 0 | 2009 | |
| 8,809,829 Phase change memory having stabilized microstructure and manufacturing method | 0 | 2009 | |
| 8,406,033 Memory device and method for sensing and fixing margin cells | 0 | 2009 | |
| 8,064,247 Rewritable memory device based on segregation/re-absorption | 1 | 2009 | |
| 8,110,822 Thermal protect PCRAM structure and methods for making | 2 | 2009 | |
| 7,894,254 Refresh circuitry for phase change memory | 3 | 2009 | |
| 7,924,600 Methods of operating a bistable resistance random access memory with multiple memory layers and multilevel memory states | 2 | 2009 | |
| 8,198,619 Phase change memory cell structure | 0 | 2009 | |
| 8,064,248 2T2R-1T1R mix mode phase change memory array | 2 | 2009 | |
| 8,110,429 Bridge resistance random access memory device and method with a singular contact structure | 0 | 2009 | |
| 7,879,692 Programmable resistive memory cell with self-forming gap | 0 | 2009 | |
| 7,972,895 Memory cell device with coplanar electrode surface and method | 2 | 2009 | |
| 7,993,962 I-shaped phase change memory cell | 0 | 2009 | |
| 8,143,612 Phase change memory cell in via array with self-aligned, self-converged bottom electrode and method for manufacturing | 2 | 2009 | |
| 8,062,923 Thin film fuse phase change cell with thermal isolation pad and manufacturing method | 0 | 2009 | |
| 7,893,418 Phase change memory cell having interface structures with essentially equal thermal impedances and manufacturing methods | 0 | 2009 | |
| 7,964,863 Memory cell having a side electrode contact | 1 | 2009 | |
| 7,929,340 Phase change memory cell and manufacturing method | 3 | 2010 | |
| 7,964,468 Multi-level memory cell having phase change element and asymmetrical thermal boundary | 1 | 2010 | |
| 8,238,149 Methods and apparatus for reducing defect bits in phase change memory | 1 | 2010 | |
| 8,111,541 Method of a multi-level cell resistance random access memory with metal oxides | 2 | 2010 | |
| 7,920,415 Memory cell device and programming methods | 0 | 2010 | |
| 8,059,449 Phase change device having two or more substantial amorphous regions in high resistance state | 1 | 2010 | |
| 8,363,463 Phase change memory having one or more non-constant doping profiles | 1 | 2010 | |
| 8,178,387 Methods for reducing recrystallization time for a phase change material | 1 | 2010 | |
| 8,178,405 Resistor random access memory cell device | 1 | 2010 | |
| 7,978,509 Phase change memory with dual word lines and source lines and method of operating same | 2 | 2010 | |
| 8,080,440 Resistor random access memory cell with L-shaped electrode | 1 | 2010 | |
| 8,178,388 Programmable resistive RAM and manufacturing method | 2 | 2010 | |
| 8,729,521 Self aligned fin-type programmable memory cell | 1 | 2010 | |
| 8,237,148 self align side wall active phase change memory | 0 | 2010 | |
| 8,310,864 Self-aligned bit line under word line memory array | 2 | 2010 | |
| 7,964,437 Memory device having wide area phase change element and small electrode contact area | 3 | 2010 | |
| 7,943,920 Resistive memory structure with buffer layer | 0 | 2010 | |
| 8,008,114 Phase change memory device and manufacturing method | 0 | 2010 | |
| 7,875,493 Memory structure with reduced-size memory element between memory material portions | 3 | 2010 | |
| 8,039,392 Resistor random access memory cell with reduced active area and reduced contact areas | 1 | 2010 | |
| 8,395,935 Cross-point self-aligned reduced cell size phase change memory | 0 | 2010 | |
| 8,143,089 Self-align planerized bottom electrode phase change memory and manufacturing method | 1 | 2010 | |
| 8,097,487 Method for making a phase change memory device with vacuum cell thermal isolation | 1 | 2010 | |
| 8,110,430 Vacuum jacket for phase change memory element | 0 | 2010 | |
| 8,497,705 Phase change device for interconnection of programmable logic device | 0 | 2010 | |
| 8,467,238 Dynamic pulse operation for phase change memory | 0 | 2010 | |
| 8,110,456 Method for making a self aligning memory device | 0 | 2010 | |
| 8,094,488 Set algorithm for phase change memory cell | 1 | 2010 | |
| 8,263,960 Phase change memory cell with filled sidewall memory element and method for fabricating the same | 0 | 2010 | |
| 8,315,088 Multiple phase change materials in an integrated circuit for system on a chip application | 0 | 2011 | |
| 8,228,721 Refresh circuitry for phase change memory | 0 | 2011 | |
| 8,912,515 Manufacturing method for pipe-shaped electrode phase change memory | 0 | 2011 | |
| 8,222,071 Method for making self aligning pillar memory cell device | 0 | 2011 | |
| 8,313,979 Phase change memory cell having vertical channel access transistor | 0 | 2011 | |
| 8,324,681 Stacked non-volatile memory device and methods for fabricating the same | 0 | 2011 | |
| 8,237,144 Polysilicon plug bipolar transistor for phase change memory | 0 | 2011 | |
| 8,587,983 Resistance random access memory structure for enhanced retention | 0 | 2011 | |
| 8,293,600 Thermally stabilized electrode structure | 0 | 2011 | |
| 8,916,845 Low operational current phase change memory structures | 0 | 2011 | |
| 8,779,408 Phase change memory cell structure | 0 | 2012 | |
| 8,860,111 Phase change memory cell array with self-converged bottom electrode and method for manufacturing | 0 | 2012 | |
| 8,624,236 Phase change memory cell having vertical channel access transistor | 0 | 2012 | |
| 8,853,047 Self aligned fin-type programmable memory cell | 0 | 2014 | |
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| 6,951,805 Method of forming integrated circuitry, method of forming memory circuitry, and method of forming random access memory circuitry | 7 | 2001 | |
| 6,955,940 Method of forming chalcogenide comprising devices | 28 | 2001 | |
| * 6,815,818 Electrode structure for use in an integrated circuit | 13 | 2001 | |
| 6,873,538 Programmable conductor random access memory and a method for writing thereto | 17 | 2001 | |
| 6,909,656 PCRAM rewrite prevention | 12 | 2002 | |
| 6,791,885 Programmable conductor random access memory and method for sensing same | 10 | 2002 | |
| 6,891,749 Resistance variable ‘on ’ memory | 22 | 2002 | |
| 6,809,362 Multiple data state memory cell | 17 | 2002 | |
| 6,937,528 Variable resistance memory and method for sensing same | 21 | 2002 | |
| 6,849,868 Methods and apparatus for resistance variable material cells | 18 | 2002 | |
| 6,864,500 Programmable conductor memory cell structure | 209 | 2002 | |
| 6,858,482 Method of manufacture of programmable switching circuits and memory cells employing a glass layer | 33 | 2002 | |
| 6,855,975 Thin film diode integrated with chalcogenide memory cell | 32 | 2002 | |
| 7,015,494 Assemblies displaying differential negative resistance | 12 | 2002 | |
| 7,071,021 PCRAM memory cell and method of making same | 16 | 2002 | |
| 7,018,863 Method of manufacture of a resistance variable memory cell | 10 | 2002 | |
| 7,364,644 Silver selenide film stoichiometry and morphology control in sputter deposition | 3 | 2002 | |
| 7,163,837 Method of forming a resistance variable memory element | 7 | 2002 | |
| 7,010,644 Software refreshed memory device and method | 8 | 2002 | |
| 6,867,114 Methods to form a memory cell with metal-rich metal chalcogenide | 19 | 2002 | |
| 6,867,996 Single-polarity programmable resistance-variable memory element | 43 | 2002 | |
| 6,864,521 Method to control silver concentration in a resistance variable memory element | 19 | 2002 | |
| 6,856,002 Graded GexSe100-x concentration in PCRAM | 20 | 2002 | |
| 6,949,453 Agglomeration elimination for metal sputter deposition of chalcogenides | 3 | 2002 | |
| * 6,878,569 Agglomeration elimination for metal sputter deposition of chalcogenides | 9 | 2002 | |
| 6,894,304 Apparatus and method for dual cell common electrode PCRAM memory device | 125 | 2003 | |
| 6,813,178 Chalcogenide glass constant current device, and its method of fabrication and operation | 18 | 2003 | |
| 7,022,579 Method for filling via with metal | 2 | 2003 | |
| 7,050,327 Differential negative resistance memory | 18 | 2003 | |
| 6,888,155 Stoichiometry for chalcogenide glasses useful for memory devices and method of formation | 24 | 2003 | |
| 6,961,277 Method of refreshing a PCRAM memory device | 26 | 2003 | |
| 7,061,004 Resistance variable memory elements and methods of formation | 7 | 2003 | |
| 6,812,087 Methods of forming non-volatile resistance variable devices and methods of forming silver selenide comprising structures | 13 | 2003 | |
| 6,858,465 Elimination of dendrite formation during metal/chalcogenide glass deposition | 4 | 2003 | |
| 6,833,559 Non-volatile resistance variable device | 3 | 2003 | |
| 6,882,578 PCRAM rewrite prevention | 4 | 2003 | |
| 6,998,697 Non-volatile resistance variable devices | 13 | 2003 | |
| 7,528,401 Agglomeration elimination for metal sputter deposition of chalcogenides | 2 | 2004 | |
| 6,974,965 Agglomeration elimination for metal sputter deposition of chalcogenides | 4 | 2004 | |
| 7,105,864 Non-volatile zero field splitting resonance memory | 7 | 2004 | |
| 7,056,762 Methods to form a memory cell with metal-rich metal chalcogenide | 12 | 2004 | |
| 7,022,555 Methods of forming a semiconductor memory device | 1 | 2004 | |
| 6,949,402 Method of forming a non-volatile resistance variable device | 1 | 2004 | |
| 6,953,720 Methods for forming chalcogenide glass-based memory elements | 14 | 2004 | |
| 7,479,650 Method of manufacture of programmable conductor memory | 31 | 2004 | |
| 7,098,068 Method of forming a chalcogenide material containing device | 6 | 2004 | |
| 7,087,454 Fabrication of single polarity programmable resistance structure | 10 | 2004 | |
| 7,087,919 Layered resistance variable memory device and method of fabrication | 13 | 2004 | |
| 6,908,808 Method of forming and storing data in a multiple state memory cell | 4 | 2004 | |
| 7,002,833 Complementary bit resistance memory sensor and method of operation | 39 | 2004 | |
| 7,115,504 Method of forming electrode structure for use in an integrated circuit | 12 | 2004 | |
| 7,115,992 Electrode structure for use in an integrated circuit | 4 | 2004 | |
| 7,332,401 Method of fabricating an electrode structure for use in an integrated circuit | 11 | 2004 | |
| 7,459,764 Method of manufacture of a PCRAM memory cell | 7 | 2004 | |
| 7,190,048 Resistance variable memory device and method of fabrication | 11 | 2004 | |
| 7,365,411 Resistance variable memory with temperature tolerant materials | 36 | 2004 | |
| 7,354,793 Method of forming a PCRAM device incorporating a resistance-variable chalocogenide element | 8 | 2004 | |
| 6,954,385 Method and apparatus for sensing resistive memory state | 17 | 2004 | |
| 7,030,410 Resistance variable device | 12 | 2004 | |
| 7,209,378 Columnar 1T-N memory cell structure | 7 | 2004 | |
| 7,151,688 Sensing of resistance variable memory devices | 8 | 2004 | |
| 7,094,700 Plasma etching methods and methods of forming memory devices comprising a chalcogenide comprising layer received operably proximate conductive electrodes | 1 | 2004 | |
| 7,223,627 Memory element and its method of formation | 7 | 2004 | |
| 7,329,558 Differential negative resistance memory | 8 | 2004 | |
| 7,112,484 Thin film diode integrated with chalcogenide memory cell | 6 | 2004 | |
| 7,049,009 Silver selenide film stoichiometry and morphology control in sputter deposition | 3 | 2004 | |
| 7,374,174 Small electrode for resistance variable devices | 7 | 2004 | |
| 7,317,200 SnSe-based limited reprogrammable cell | 7 | 2005 | |
| 7,224,632 Rewrite prevention in a variable resistance memory | 4 | 2005 | |
| 7,202,520 Multiple data state memory cell | 6 | 2005 | |
| 7,348,205 Method of forming resistance variable devices | 6 | 2005 | |
| 7,709,289 Memory elements having patterned electrodes and method of forming the same | 0 | 2005 | |
| 7,427,770 Memory array for increased bit density | 4 | 2005 | |
| 7,269,044 Method and apparatus for accessing a memory array | 1 | 2005 | |
| 7,385,868 Method of refreshing a PCRAM memory device | 8 | 2005 | |
| 7,269,079 Power circuits for reducing a number of power supply voltage taps required for sensing a resistive memory | 1 | 2005 | |
| 7,326,950 Memory device with switching glass layer | 8 | 2005 | |
| 7,233,520 Process for erasing chalcogenide variable resistance memory bits | 7 | 2005 | |
| 7,274,034 Resistance variable memory device with sputtered metal-chalcogenide region and method of fabrication | 8 | 2005 | |
| 7,332,735 Phase change memory cell and method of formation | 22 | 2005 | |
| 7,317,567 Method and apparatus for providing color changing thin film material | 8 | 2005 | |
| 7,518,212 concentration in PCRAM | 10 | 2005 | |
| 7,579,615 Access transistor for memory device | 6 | 2005 | |
| 7,304,368 Chalcogenide-based electrokinetic memory element and method of forming the same | 7 | 2005 | |
| 7,251,154 Method and apparatus providing a cross-point memory array using a variable resistance memory cell and capacitance | 16 | 2005 | |
| 7,277,313 Resistance variable memory element with threshold device and method of forming the same | 7 | 2005 | |
| 7,199,444 Memory device, programmable resistance memory cell and memory array | 3 | 2005 | |
| 7,242,603 Method of operating a complementary bit resistance memory sensor | 8 | 2005 | |
| 7,294,527 Method of forming a memory cell | 7 | 2005 | |
| 7,307,908 Software refreshed memory device and method | 5 | 2005 | |
| 7,235,419 Method of making a memory cell | 5 | 2005 | |
| 7,550,818 Method of manufacture of a PCRAM memory cell | 6 | 2006 | |
| 7,396,699 Method of forming non-volatile resistance variable devices and method of forming a programmable memory cell of memory circuitry | 7 | 2006 | |
| 7,547,905 Programmable conductor memory cell structure and method therefor | 1 | 2006 | |
| 7,723,713 Layered resistance variable memory device and method of fabrication | 9 | 2006 | |
| 7,393,798 Resistance variable memory with temperature tolerant materials | 14 | 2006 | |
| 7,190,608 Sensing of resistance variable memory devices | 8 | 2006 | |
| 7,459,336 Method of forming a chalcogenide material containing device | 0 | 2006 | |
| 7,366,003 Method of operating a complementary bit resistance memory sensor and method of operation | 1 | 2006 | |
| 7,692,177 Resistance variable memory element and its method of formation | 7 | 2006 | |
| 7,348,209 Resistance variable memory device and method of fabrication | 7 | 2006 | |
| 7,700,422 Methods of forming memory arrays for increased bit density | 0 | 2006 | |
| 7,910,397 Small electrode for resistance variable devices | 0 | 2006 | |
| 7,663,133 Memory elements having patterned electrodes and method of forming the same | 0 | 2006 | |
| 7,289,349 Resistance variable memory element with threshold device and method of forming the same | 8 | 2006 | |
| 7,366,045 Power circuits for reducing a number of power supply voltage taps required for sensing a resistive memory | 0 | 2006 | |
| 7,498,231 Multiple data state memory cell | 0 | 2007 | |
| 7,282,783 Resistance variable memory device and method of fabrication | 9 | 2007 | |
| 7,709,885 Access transistor for memory device | 14 | 2007 | |
| 7,994,491 PCRAM device with switching glass layer | 2 | 2007 | |
| 7,759,665 PCRAM device with switching glass layer | 6 | 2007 | |
| 7,643,333 Process for erasing chalcogenide variable resistance memory bits | 0 | 2007 | |
| 7,687,793 Resistance variable memory cells | 25 | 2007 | |
| 7,564,731 Software refreshed memory device and method | 3 | 2007 | |
| 7,668,000 Method and apparatus providing a cross-point memory array using a variable resistance memory cell and capacitance | 2 | 2007 | |
| 7,433,227 Resistance variable memory device with sputtered metal-chalcogenide region and method of fabrication | 9 | 2007 | |
| 8,101,936 SnSe-based limited reprogrammable cell | 0 | 2007 | |
| 7,663,137 Phase change memory cell and method of formation | 11 | 2007 | |
| 7,745,808 Differential negative resistance memory | 7 | 2007 | |
| 7,749,853 Method of forming a variable resistance memory device comprising tin selenide | 6 | 2008 | |
| 7,863,597 Resistance variable memory devices with passivating material | 2 | 2008 | |
| 7,879,646 Assemblies displaying differential negative resistance, semiconductor constructions, and methods of forming assemblies displaying differential negative resistance | 2 | 2008 | |
| 7,785,976 Method of forming a memory device incorporating a resistance-variable chalcogenide element | 8 | 2008 | |
| 7,586,777 Resistance variable memory with temperature tolerant materials | 9 | 2008 | |
| 7,869,249 Complementary bit PCRAM sense amplifier and method of operation | 1 | 2008 | |
| 7,551,509 Power circuits for reducing a number of power supply voltage taps required for sensing a resistive memory | 1 | 2008 | |
| 7,682,992 Resistance variable memory with temperature tolerant materials | 7 | 2008 | |
| 7,701,760 Resistance variable memory device with sputtered metal-chalcogenide region and method of fabrication | 9 | 2008 | |
| 7,768,861 Software refreshed memory device and method | 0 | 2009 | |
| 7,791,058 Enhanced memory density resistance variable memory cells, arrays, devices and systems including the same, and methods of fabrication | 4 | 2009 | |
| 7,978,500 Method and apparatus providing a cross-point memory array using a variable resistance memory cell and capacitance | 0 | 2010 | |
| 7,924,603 Resistance variable memory with temperature tolerant materials | 2 | 2010 | |
| 7,968,927 Memory array for increased bit density and method of forming the same | 0 | 2010 | |
| 7,940,556 Resistance variable memory device with sputtered metal-chalcogenide region and method of fabrication | 2 | 2010 | |
| 8,652,903 Access transistor for memory device | 0 | 2010 | |
| 8,263,958 Layered resistance variable memory device and method of fabrication | 1 | 2010 | |
| 8,334,186 Method of forming a memory device incorporating a resistance variable chalcogenide element | 0 | 2010 | |
| 7,944,768 Software refreshed memory device and method | 0 | 2010 | |
| 8,030,636 Enhanced memory density resistance variable memory cells, arrays, devices and systems including the same, and methods of fabrication | 1 | 2010 | |
| 8,189,366 Method and apparatus providing a cross-point memory array using a variable resistance memory cell and capacitance | 1 | 2011 | |
| 8,487,288 Memory device incorporating a resistance variable chalcogenide element | 0 | 2011 | |
| 8,611,136 Method and apparatus providing a cross-point memory array using a variable resistance memory cell and capacitance | 0 | 2012 | |
| 8,895,401 Method of forming a memory device incorporating a resistance variable chalcogenide element | 0 | 2012 | |
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|
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| 6,867,064 Method to alter chalcogenide glass for improved switching characteristics | 12 | 2002 | |
| 6,890,790 Co-sputter deposition of metal-doped chalcogenides | 5 | 2002 | |
| 6,903,361 Non-volatile memory structure | 31 | 2003 | |
| 7,153,721 Resistance variable memory elements based on polarized silver-selenide network growth | 8 | 2004 | |
| 7,583,551 Power management control and controlling memory refresh operations | 5 | 2004 | |
| 7,202,104 Co-sputter deposition of metal-doped chalcogenides | 1 | 2004 | |
| 6,946,347 Non-volatile memory structure | 9 | 2004 | |
| 7,276,722 Non-volatile memory structure | 7 | 2005 | |
| 7,446,393 Co-sputter deposition of metal-doped chalcogenides | 0 | 2007 | |
| 7,491,963 Non-volatile memory structure | 0 | 2007 | |
| 7,964,436 Co-sputter deposition of metal-doped chalcogenides | 0 | 2008 | |
| 8,619,485 Power management control and controlling memory refresh operations | 0 | 2009 | |
|
|
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| 6,985,377 Phase change media for high density data storage | 10 | 2003 | |
| 7,379,412 Methods for writing and reading highly resolved domains for high density data storage | 1 | 2004 | |
| 7,301,887 Methods for erasing bit cells in a high density data storage device | 2 | 2004 | |
| 7,463,573 Patterned media for a high density data storage device | 5 | 2005 | |
| 7,367,119 Method for forming a reinforced tip for a probe storage device | 2 | 2005 | |
| 7,309,630 Method for forming patterned media for a high density data storage device | 91 | 2005 | |
| 7,336,524 Atomic probes and media for high density data storage | 2 | 2005 | |
| 7,391,707 Devices and methods of detecting movement between media and probe tip in a probe data storage system | 2 | 2007 | |
| 7,414,953 Memory having a layer with electrical conductivity anisotropy | 3 | 2007 | |
|
|
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| * 7,319,057 Phase change material memory device | 5 | 2001 | |
| * 6,869,841 Carbon-containing interfacial layer for phase-change memory | 7 | 2003 | |
| 7,399,655 Damascene conductive line for contacting an underlying memory element | 3 | 2003 | |
| * 7,728,352 Damascene conductive line for contacting an underlying memory element | 1 | 2008 | |
| * 8,440,535 Forming a phase change memory with an ovonic threshold switch | 0 | 2012 | |
|
|
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| 7,515,461 Current compliant sensing architecture for multilevel phase change memory | 57 | 2007 | |
| 8,138,028 Method for manufacturing a phase change memory device with pillar bottom electrode | 4 | 2007 | |
| 8,030,634 Memory array with diode driver and method for fabricating the same | 1 | 2008 | |
| 7,825,398 Memory cell having improved mechanical stability | 1 | 2008 | |
|
|
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| * 7,242,019 Shunted phase change memory | 7 | 2002 | |
| * 6,707,712 Method for reading a structural phase-change memory | 193 | 2003 | |
|
|
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| 7,038,231 Non-planarized, self-aligned, non-volatile phase-change memory array and method of formation | 4 | 2004 | |
| 7,682,866 Non-planarized, self-aligned, non-volatile phase-change memory array and method of formation | 0 | 2006 | |
|
|
|||
| 6,930,909 Memory device and methods of controlling resistance variation and resistance profile drift | 40 | 2003 | |
|
|
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| 8,467,236 Continuously variable resistor | 0 | 2010 | |
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| 6,937,507 Memory device and method of operating same | 236 | 2003 | |
|
|
|||
| 8,624,215 Phase change memory devices and methods comprising gallium, lanthanide and chalcogenide compounds | 2 | 2006 | |
* Cited By Examiner
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| Fee | Large entity fee | small entity fee | micro entity fee | due date |
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| 11.5 Year Payment | $7400.00 | $3700.00 | $1850.00 | Nov 20, 2014 |
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| Surcharge - 11.5 year - Late payment within 6 months | $160.00 | $80.00 | $40.00 |
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Full Text
US Patent No: 6,567,293
Single level metal memory cell using chalcogenide cladding
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