Programming a phase-change material memory
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United States of America Patent
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May 27, 2003
Grant Date -
Jan 2, 2003
app pub date -
Jun 29, 2001
filing date -
Jun 29, 2001
priority date (Note) -
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Abstract
The memory device has constituent cells which include a structural phase-change material to store the cells data. This material may be, for instance, a chalcogenide alloy. A first pulse is applied to the cell to leave the material in a first state, such as a reset state in which the material is relatively amorphous and has relatively high resistivity. Thereafter, a second pulse is applied to the cell to change the material from the first state to a second, different state, such as a set state in which the material is relatively crystalline and has relatively low resistivity. This second pulse has a generally triangular shape, rather than a rectangular one.
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