Semiconductor device having improved gate electrode placement and decreased area design
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United States of America Patent
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Jun 28, 2011
Grant Date -
Jan 1, 2009
app pub date -
Jun 27, 2007
filing date -
Jun 27, 2007
priority date (Note) -
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Abstract
A semiconductor device includes a gate electrode having ends that overlap isolation regions, wherein the gate electrode is located over an active region located within a semiconductor substrate. A gate oxide is located between the gate electrode and the active regions, and source/drains are located adjacent the gate electrode and within the active region. An etch stop layer is located over the gate electrode and the gate electrode has at least one electrical contact that extends through the etch stop layer and contacts a portion of the gate electrode that in one embodiment overlies the active region, and in another embodiment is less than one alignment tolerance from the active region.
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