Alpha tantalum capacitor plate

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United States of America Patent

PATENT NO 7969708
APP PUB NO 20090116169A1
SERIAL NO

11933919

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Abstract

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A method for forming an alpha-tantalum layer comprising disposing a nitrogen containing base layer on a semiconductor substrate, bombarding the nitrogen containing base layer with a bombarding element, thereby forming an alpha-tantalum seed layer, and sputtering a layer of tantalum on the alpha-tantalum seed layer, thereby forming a surface layer of substantially alpha-tantalum.

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Patent Owner(s)

  • TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chen, Kei-Wei Taipei, TW 225 1026
Liao, Miao-Cheng Yunlin, TW 19 99
Sun, Phil Kaohsiung, TW 4 11
Tsao, Jung-Chih Tainan, TW 51 408

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