Semiconductor device having stacked body on substrate via joining metal and method for manufacturing the same
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United States of America Patent
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Jun 24, 2014
Grant Date -
Jan 26, 2012
app pub date -
Mar 3, 2011
filing date -
Jul 23, 2010
priority date (Note) -
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Abstract
According to one embodiment, a semiconductor device includes a substrate and a stacked body on the substrate via a joining metal layer. The stacked body includes a device portion and a peripheral portion. The device portion includes from a bottommost layer to a topmost layer included in the stacked body. The peripheral portion surrounding and provided around the device portion; the peripheral portion is a portion of the bottommost layer to the topmost layer included in the stacked body and includes a portion of a semiconductor layer in contact with the joining metal layer.
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