Interconnects having sealing structures to enable selective metal capping layers
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United States of America Patent
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Jan 6, 2015
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N/A
app pub date -
Sep 23, 2011
filing date -
Jun 3, 2005
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Abstract
Methods of fabricating a capped interconnect for a microelectronic device which includes a sealing feature for any gaps between a capping layer and an interconnect and structures formed therefrom. The sealing features improve encapsulation of the interconnect, which substantially reduces or prevents electromigration and/or diffusion of conductive material from the capped interconnect.
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