Crystal sensor made by ion implantation for sensing a property of interest within a borehole in the earth

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United States of America Patent

PATENT NO 9151153
APP PUB NO 20130134981A1
SERIAL NO

13307801

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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Disclosed is a method for producing a crystal sensor. The method includes selecting a crystal configured to sense a property of interest. The method further includes implanting ions in the crystal using ion-implantation to produce a conductive region within the crystal where the conductive region is capable of providing a signal to sense the property of interest. Also disclosed is a method and apparatus for estimating a property of interest using the crystal sensor in a borehole penetrating the earth.

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Patent Owner(s)

  • BAKER HUGHES INCORPORATED

International Classification(s)

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Csutak, Sebastian Houston, US 57 667
Liu, Yi Houston, US 759 9343
Monteiro, Othon Houston, US 13 165
Sanderlin, Kerry L Houston, US 7 60

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