CMOS-compatible gold-free contacts

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 9252118
APP PUB NO 20140050243A1
SERIAL NO

13995689

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Abstract

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A semiconductor metallurgy includes a ratio of germanium and palladium that provides low contact resistance to both n-type material and p-type material. The metallurgy allows for a contact that does not include gold and is compatible with mass-production CMOS techniques. The ratio of germanium and palladium can be achieved by stacking layers of the materials and annealing the stack, or simultaneously depositing the germanium and palladium on the material where the contact is to be manufactured.

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Patent Owner(s)

  • INTEL CORPORATION;THE REGENTS OF THE UNIVERSITY OF CALIFORNIA

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Bowers, John Santa Barbara, US 33 1043
Feldesh, Ran Gan Yavne, IL 2 31
Geva, Michael Sierra Madre, US 15 112
Heck, John Berkeley, US 110 1904
Jain, Siddharth Santa Barbara, US 17 82
Jones, Richard San Mateo, US 121 1301
Shetrit, Yoel Kfar Ben-Nun, IL 2 80
Sysak, Matthew Sunnyvale, US 14 64

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