DRAM MIM capacitor using non-noble electrodes
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Mar 8, 2016
Grant Date -
May 21, 2015
app pub date -
Jan 19, 2015
filing date -
Sep 20, 2013
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
A method for forming a capacitor stack includes forming a first bottom electrode layer including a conductive metal nitride material. A second bottom electrode layer is formed above the first bottom electrode layer. The second bottom electrode layer includes a conductive metal oxide material, wherein the crystal structure of the conductive metal oxide material promotes a desired high-k crystal phase of a subsequently deposited dielectric layer. A dielectric layer is formed above the second bottom electrode layer. Optionally, an oxygen-rich metal oxide layer is formed above the dielectric layer. Optionally, a third top electrode layer is formed above the oxygen-rich metal oxide layer. The third top electrode layer includes a conductive metal oxide material. A fourth top electrode layer is formed above the third top electrode layer. The fourth top electrode layer includes a conductive metal nitride material.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Advertisement
Advertisement
Advertisement
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully