Semiconductor device and manufacturing method of semiconductor device
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United States of America Patent
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Dec 27, 2016
Grant Date -
Sep 15, 2016
app pub date -
Sep 3, 2015
filing date -
Mar 10, 2015
priority date (Note) -
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Abstract
According to one embodiment, a semiconductor device includes a semiconductor substrate made of a first semiconductor material, an element isolation insulating film, a gate electrode film, source/drain regions, a channel region, and a diffusion preventing film. The channel region is provided near a surface of the semiconductor substrate below the gate electrode film, and containing a second impurity of a predetermined conductivity type diffused therein. The diffusion preventing film is provided at an interface between the element isolation insulating film and the semiconductor substrate, and made of a second semiconductor material different from the first semiconductor material.
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