DT capacitor with silicide outer electrode and/or compressive stress layer, and related methods

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United States of America Patent

PATENT NO 9653535
APP PUB NO 20150357402A1
SERIAL NO

14831487

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Abstract

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Method of forming a deep trench capacitor are provided. The method may include forming a deep trench in a substrate; forming a metal-insulator-metal (MIM) stack within a portion of the deep trench, the MIM stack forming including forming an outer electrode by co-depositing a refractory metal and silicon into the deep trench; and filling a remaining portion of the deep trench with a semiconductor.

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Patent Owner(s)

  • INTERNATIONAL BUSINESS MACHINES CORPORATION

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Breil, Nicolas L Wappingers Falls, US 32 137
Donaton, Ricardo A Cortlandt Manor, US 22 626
Ho, Herbert L New Windsor, US 96 1935
Kang, Dong Hun Hopewell Junction, US 34 185
Krishnan, Rishikesh Painted Post, US 53 247

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