Melt anneal source and drain regions

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United States of America Patent

PATENT NO 11855146
SERIAL NO

17648156

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Abstract

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A method includes forming a gate stack on a first portion of a semiconductor substrate, removing a second portion of the semiconductor substrate on a side of the gate stack to form a recess, growing a semiconductor region starting from the recess, implanting the semiconductor region with an impurity, and performing a melt anneal on the semiconductor region. At least a portion of the semiconductor region is molten during the melt anneal.

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Patent Owner(s)

  • TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chang, Huicheng Tainan, TW 230 855
Chen, Li-Heng Taichung, TW 32 105
Chen, Liang-Yin Hsinchu, TW 120 365
Chen, Wen-Yen Hsinchu, TW 54 739
Liu, Su-Hao Jhongpu Township, TW 82 803
Wang, Li-Ting Hsinchu, TW 101 976
Wang, Ying-Lang Tien-Chung Village, TW 180 1218
Yeo, Yee-Chia Hsinchu, TW 428 6723

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