Method for producing a semiconductor component having a metallic control electrode, and semiconductor component
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United States of America Patent
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Aug 11, 2009
Grant Date -
Sep 20, 2007
app pub date -
Nov 28, 2006
filing date -
Mar 17, 2006
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Abstract
A method for producing a semiconductor component, and a semiconductor component, having a metallic gate electrode deposited onto a semiconductor layer, with the gate electrode having a gate foot and a gate head. The component is produced by depositing a first layer of aluminum on the semiconductor layer, depositing a second layer of a second metal on the first layer, depositing at least one additional layer (G3) of an additional metal, different from the second metal, on the second layer, and carrying out a temperature treatment at elevated temperature.
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