Method for controlling a plasma process

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United States of America Patent

PATENT NO 11447868
APP PUB NO 20180342375A1
SERIAL NO

15606739

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Abstract

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Embodiments of the disclosure relate to apparatus and method for a tunable plasma process within a plasma processing chamber. In one embodiment of the disclosure, a heater assembly for a plasma processing chamber is disclosed. The heater assembly includes a resistive heating element, a first lead coupling the resistive heating element to an RF filter and a tunable circuit element operable to adjust an impedance between the resistive heating element and the RF filter. Another embodiment provides a method for controlling a plasma process in a plasma processing chamber by forming a plasma from a process gas present inside the plasma processing chamber and adjusting an impedance between a resistive heating element and an RF filter coupled between the resistive heating element and a power source for the resistive heating element, while the plasma is present in the plasma processing chamber.

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Patent Owner(s)

  • APPLIED MATERIALS INC.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chafin, Michael G Santa Clara, US 18 698
Liu, Lu San Jose, US 288 1106
Nguyen, Andrew San Jose, US 276 16644
Ramaswamy, Kartik San Jose, US 347 17170
Rayaroth, Anilkumar Santa Clara, US 4 29
Yang, Yang San Diego, US 1087 7350

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