Cap oxidation for FinFET formation

Number of patents in Portfolio can not be more than 2000

United States of America

PATENT NO 11271097
APP PUB NO 20210134986A1
SERIAL NO

17080519

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Abstract

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Processing methods may be performed to produce semiconductor structures that may include a high-k dielectric material. The methods may include forming a silicon layer over a semiconductor substrate. The semiconductor substrate may include silicon germanium. The methods may include oxidizing a portion of the silicon layer to form a sacrificial oxide while maintaining a portion of the silicon layer in contact with the semiconductor substrate. The methods may include removing the sacrificial oxide. The methods may include oxidizing the portion of the silicon layer in contact with the semiconductor substrate to form an oxygen-containing material. The methods may include forming a high-k dielectric material overlying the oxygen-containing material.

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Patent Owner(s)

  • APPLIED MATERIALS INC.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Bevan, Malcolm J Santa Clara, US 50 956
Colombeau, Benjamin San Jose, US 64 391
Dube, Abhishek Fremont, US 77 1089
Hung, Steven C Sunnyvale, US 3 2
Kung, Sheng-Chin Milpitas, US 11 42
Liu, Patricia M Saratoga, US 45 1645
Swenberg, Johanes Los Gatos, US 23 2230

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