Ultra-sensitive biosensor based on lateral bipolar junction transistor having self-aligned epitaxially grown base
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United States of America Patent
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Apr 18, 2017
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N/A
app pub date -
Feb 10, 2016
filing date -
Feb 9, 2016
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Abstract
An exemplary biosensor sensor for detecting the presence of a biological material includes an SOI substrate, a lateral BJT formed on at least a portion of the substrate, and a sensing structure formed on at least a portion of an upper surface of the BJT. The BJT includes an emitter region, a collector region and a base region, the base region being formed between the emitter and collector regions and laterally adjacent thereto. The sensing structure includes at least one dielectric layer contacting at least a portion of the base region. The dielectric layer forms a receptacle for confining a biological molecule being tested and is configured to respond to charges in biological molecules, the charges being converted to a sensing signal by the BJT.
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