Semiconductor device having high frequency wiring and dummy metal layer at multilayer wiring structure
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United States of America Patent
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Apr 1, 2014
Grant Date -
Sep 19, 2013
app pub date -
May 10, 2013
filing date -
Oct 10, 2007
priority date (Note) -
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Abstract
A semiconductor device includes a semiconductor substrate, a wiring layer provided over the semiconductor substrate, a high frequency wiring provided in the wiring layer, and plural dummy metals provided in the wiring layer apart from the high frequency wiring. In a plan view, the wiring layer includes a high frequency wiring vicinity region and an external region surrounding the high frequency wiring vicinity region. The high frequency wiring vicinity region includes a first region enclosed by an outer edge of the high frequency wiring, and a second region surrounding the first region. The plural dummy metals are disposed dispersedly in the high frequency wiring vicinity region and in the external region respectively. An average interval between the dummy metals in the high frequency wiring vicinity region is wider than that in the external region.
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